公开(公告)号：US20170005241A1

公开(公告)日：2017-01-05

申请号：US15196906

申请日：2016-06-29

Applicant: Cree, Inc.

Inventor： Kenneth Lotito ,  Ryan Gresback ,  Paul Fini ,  James Ibbetson ,  Bernd Keller

IPC: H01L33/50 ,  H01L33/48 ,  H01L33/60 ,  H01L33/52

CPC classification number: H01L33/505 ,  B82B1/00 ,  B82B3/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/483 ,  H01L33/502 ,  H01L33/52 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

Abstract translation: 根据一个实施例，用于发光二极管（LED）的稳定的量子点结构包括：包含一个或多个半导体的发光颗粒，覆盖发光颗粒的缓冲层，其中缓冲层包括无定形材料，以及 阻挡层覆盖缓冲层，其中阻挡层包括氧，氮和/或碳。 根据另一个实施方案，稳定的量子点结构包括包含一个或多个半导体的发光粒子，以及包含覆盖发光粒子的无定形二氧化硅的经处理的缓冲层，其中稳定的量子点结构在暴露时显示出至少约0.7的量子产率 在80-85℃的温度和5％的相对湿度下达到约30W / cm 2的蓝光通量500小时。