公开(公告)号：US06221799B1

公开(公告)日：2001-04-24

申请号：US09396451

申请日：1999-09-15

申请人： Masanori Takase ,  Hitoshi Yokoi ,  Kazushige Ohbayashi

发明人： Masanori Takase ,  Hitoshi Yokoi ,  Kazushige Ohbayashi

IPC分类号： C04B35465

CPC分类号： C04B35/465 ,  C04B35/462 ,  H01P1/2056 ,  H05K1/0306

摘要： Disclosed is a dielectric ceramic material represented by composition formula: (uLi2O—vNa2O)—wSm2O3—xCaO—yTiO2, having a solid solution structure made up of perovskite crystals represented by Ca1−xSm2x/3TiO3, perovskite crystals represented by Li1/2Sm1/2TiO3, and perovskite crystals represented by Na1/2Sm1/2TiO3. Substitution of part of Ti in the composition with at least one of Ga and Al provides a dielectric ceramic material with a particularly increased value of unloaded quality coefficient. The absolute value of the temperature coefficient of resonance frequency is controlled to a small value by adjusting the proportions of Li and Na.

摘要翻译： 公开了一种由组成式：（uLi2O-vNa2O）-wSm2O3-xCaO-yTiO2表示的介电陶瓷材料，其具有由Ca1-xSm2x / 3TiO3表示的钙钛矿晶体构成的固溶体结构，由Li1 / 2Sm1 / 2TiO3 ，和由Na1 / 2Sm1 / 2TiO3表示的钙钛矿晶体。 用Ga和Al中的至少一种替代组合物中的部分Ti提供具有特别增加的无载质量系数值的介电陶瓷材料。 通过调节Li和Na的比例，将共振频率的温度系数的绝对值控制在较小的值。

公开(公告)号：US6117806A

公开(公告)日：2000-09-12

申请号：US957627

申请日：1997-10-24

申请人： Hitoshi Yokoi ,  Akifumi Tosa ,  Kazushige Ohbayashi

发明人： Hitoshi Yokoi ,  Akifumi Tosa ,  Kazushige Ohbayashi

IPC分类号： C04B35/495 ,  H01P7/10

CPC分类号： C04B35/495 ,  H01P7/10

摘要： Dielectric materials are disclosed that are based on BaO--ZnO--Ta.sub.2 O.sub.5 represented by the formula Ba(Zn.sub.1/3 Ta.sub.2/3)O.sub.3. Ba has been partly replaced by K and either Zn or Ta has been replaced by at least one element selected from Mg, Zr, Ga, Ni, Nb, Sn. The dielectric materials have a relatively high permittivity, a small absolute value of the temperature coefficient of resonance frequency, and a high unloaded quality factor. A method for producing the dielectric materials is also disclosed which includes mixing given amounts of starting materials, such as, for example, BaCO.sub.3, ZnO, Ta.sub.2 O.sub.5, K.sub.2 CO.sub.3, MgCO.sub.3, SnO.sub.2 or ZrO.sub.2, compacting the mixture to produce a compact, sintering the compact in an oxidizing atmosphere such as, for example, air, at 1,400 and 1,600.degree. C., more preferably at 1,550 to 1,600.degree. C. for 2 hours, and then heating the sintered compact at a temperature lower than the sintering temperature by from 50 to 250.degree. C., e.g., by 100.degree. C., for at least 12 hours, preferably for 24 hours. A dielectric resonator comprising the dielectric material of the present invention is also disclosed.

摘要翻译： 公开了基于由式Ba（Zn + E，fra 1/3 + EE Ta + E，fra 2/3 + EE）O 3表示的BaO-ZnO-Ta 2 O 5的介电材料。 Ba部分被K替代，并且Zn或Ta已经被选自Mg，Zr，Ga，Ni，Nb，Sn中的至少一种元素代替。 电介质材料具有相对高的介电常数，谐振频率的温度系数的绝对值小，以及高的卸载品质因数。 还公开了一种用于制造电介质材料的方法，其包括混合给定量的起始材料，例如BaCO 3，ZnO，Ta 2 O 5，K 2 CO 3，MgCO 3，SnO 2或ZrO 2，将该混合物压实成压坯， 在氧化气氛例如空气中，在1,400和1600℃，更优选在1,550至1600℃下进行2小时，然后在低于烧结温度的温度下将烧结体加热50 至250℃，例如100℃，至少12小时，优选24小时。 还公开了包括本发明的介电材料的介质谐振器。

公开(公告)号：US20080048823A1

公开(公告)日：2008-02-28

申请号：US11597048

申请日：2005-05-12

申请人： Masatoshi Ueki ,  Hitoshi Yokoi

发明人： Masatoshi Ueki ,  Hitoshi Yokoi

IPC分类号： H01C10/00

CPC分类号： H01C17/242 ,  H01C17/23 ,  H01C17/24

摘要： An object of the invention is to provide a resistor element that makes it possible to adjust the resistance value of a precursor easily in producing a resistance element having a target resistance value from the precursor, as well as to the precursor and a related resistance value adjusting method. A precursor 70 has a meandering resistance pattern formed on a front surface 11 of a substrate 10 as well as at least three trimming lines. The precursor 70 is configured so as to be defined by a geometric sequence that satisfies Inequality 0.5αk

摘要翻译： 本发明的目的是提供一种电阻元件，其可以在制造具有来自前驱体的目标电阻值的电阻元件以及前体和相关电阻值调整时，容易地调节前体的电阻值 方法。 前体70具有形成在基板10的前表面11上的曲折电阻图案以及至少三个修整线。 前体70被配置为由满足不等式的半数k + 1的几何序列定义， 其中α是通过按照降序排列在切割各个修剪线时前体的电阻值增加而获得的序列的通用术语，并且将这样排列的电阻标准化 在未切割修剪线的状态下，前体的初始电阻值增加。

公开(公告)号：US20050200448A1

公开(公告)日：2005-09-15

申请号：US11074075

申请日：2005-03-08

申请人： Koichi Fujita ,  Masatoshi Ueki ,  Hitoshi Yokoi

发明人： Koichi Fujita ,  Masatoshi Ueki ,  Hitoshi Yokoi

IPC分类号： G01K7/18 ,  G01K13/02 ,  H01C3/04

CPC分类号： G01K7/18 ,  G01K13/02 ,  G01K2013/024 ,  G01K2205/04 ,  H01C7/006 ,  H01C7/008

摘要： A platinum temperature sensor incorporating an evaporation-suppressing layer containing platinum in the vicinity of the platinum thin-film resistor of the sensor. The evaporation-suppressing layer is preferably positioned between the platinum resistor and a porous layer that is formed close to the platinum resistor and in contact with the evaporation-suppressing layer.

摘要翻译： 在传感器的铂薄膜电阻附近配有含有铂的蒸发抑制层的铂温度传感器。 蒸发抑制层优选位于铂电阻器和靠近铂电阻器并与蒸发抑制层接触的多孔层之间。

公开(公告)号：US6121174A

公开(公告)日：2000-09-19

申请号：US938158

申请日：1997-09-26

申请人： Hitoshi Yokoi ,  Hidetoshi Mizutani ,  Motohiko Sato ,  Kazushige Ohbayashi

发明人： Hitoshi Yokoi ,  Hidetoshi Mizutani ,  Motohiko Sato ,  Kazushige Ohbayashi

IPC分类号： C04B35/18 ,  C03C10/00 ,  C03C10/06 ,  C04B35/00 ,  H01B3/02 ,  H01B3/12 ,  H01P7/08 ,  H05K1/03 ,  H05K3/46 ,  C03C14/00

CPC分类号： H01P7/082 ,  C03C10/0045 ,  H01P7/084 ,  H05K1/0306

摘要： A dielectric material is disclosed which has a small absolute value of the temperature coefficient of resonance frequency and a high coefficient of unloaded quality. Also disclosed are a process for producing the dielectric material and multilayer and other circuit boards containing the dielectric material. The dielectric material is a highly densified material having a water absorption lower than 0.1%, which is obtained by mixing 95.5 to 99.5 percent by weight mixture of a glass frit and a strontium compound with 0.5 to 4.5 percent by weight titanium dioxide, compacting the resultant mixture, and sintering the compact at a relatively low temperature around 930.degree. C. This dielectric material is a glass ceramic containing strontium anorthite (SrAl.sub.2 Si.sub.2 O.sub.8) as the main crystalline phase, and may contain the TiO.sub.2, which remains unchanged after sintering. The absolute value of the temperature coefficient of resonance frequency of the dielectric material is 20 ppm/.degree. C. or lower, preferably 10 ppm/.degree. C. or lower, more preferably 5 ppm/.degree. C. or lower. The product of the unloaded quality coefficient and resonance frequency is 1,800 GHz or larger, preferably 2,500 GHz or larger. This material therefore has excellent dielectric properties.

摘要翻译： 公开了一种介电材料，其谐振频率的温度系数的绝对值小，并且具有高的卸载质量系数。 还公开了用于制造包含电介质材料的电介质材料和多层和其它电路板的方法。 电介质材料是吸水率低于0.1％的高度致密化的材料，其通过将玻璃料和锶化合物的95.5-99.5重量％的混合物与0.5-4.5重量％的二氧化钛混合而获得，将所得物 混合物，并在930℃附近的相对较低的温度下烧结。该介电材料是含有锶钙长石（SrAl 2 Si 2 O 8）作为主要结晶相的玻璃陶瓷，并且可以含有在烧结后保持不变的TiO 2。 介电材料的共振频率的温度系数的绝对值为20ppm /℃以下，优选为10ppm /℃以下，更优选为5ppm /℃以下。 无载质量系数和谐振频率的乘积为1800GHz以上，优选为2,500GHz以上。 因此该材料具有优异的介电特性。

公开(公告)号：US5955046A

公开(公告)日：1999-09-21

申请号：US922566

申请日：1997-09-03

申请人： Yasuyuki Okimura ,  Hitoshi Yokoi ,  Kazushige Ohbayashi ,  Tadashi Hattori

发明人： Yasuyuki Okimura ,  Hitoshi Yokoi ,  Kazushige Ohbayashi ,  Tadashi Hattori

IPC分类号： B01D53/86 ,  B01D53/94 ,  B01J23/00 ,  B01J23/06 ,  B01J23/08 ,  B01J8/02 ,  B01J23/40 ,  B01J23/60

CPC分类号： B01J23/08 ,  B01D53/8628 ,  B01D53/9418 ,  B01J23/005 ,  B01J23/06 ,  B01D2251/208 ,  B01D2255/20792 ,  B01D2255/2092 ,  B01D2255/405 ,  B01D2255/9207

摘要： A catalytic material for removing nitrogen oxides comprises a complex oxide as main phase. The complex oxide has a spinel structure and contains metallic elements of Al, Ga, and Zn. The mole fraction x (%) of Zn on oxide basis is greater than 0 and less than 50. Nitrogen-oxides-containing gas and a reductant such as methane or propylene are brought into contact with the catalytic material so as to remove, through reduction, nitrogen oxides from the nitrogen-oxides-containing gas. The catalytic material can be used to remove nitrogen oxides contained in exhaust gas from an automobile or the like. The catalytic material can remove nitrogen oxides even in exhaust gas of a high oxygen concentration and requires no toxic reductant such as ammonia.

摘要翻译： 用于除去氮氧化物的催化材料包括作为主相的复合氧化物。 复合氧化物具有尖晶石结构，并含有Al，Ga和Zn的金属元素。 与氧化物相比，Zn的摩尔分数x（％）大于0且小于50.使含氮氧化物的气体和还原剂如甲烷或丙烯与催化材料接触，以通过还原 来自含氮氧化物的气体的氮氧化物。 催化剂材料可用于从汽车等中除去废气中所含的氮氧化物。 即使在高氧浓度的废气中，催化材料也可以除去氮氧化物，并且不需要有毒的还原剂如氨。

公开(公告)号：US5898015A

公开(公告)日：1999-04-27

申请号：US707488

申请日：1996-09-19

申请人： Hitoshi Yokoi ,  Yasuyuki Okimura ,  Tadashi Hattori

发明人： Hitoshi Yokoi ,  Yasuyuki Okimura ,  Tadashi Hattori

IPC分类号： B01D53/04 ,  B01D53/94 ,  B01J20/06 ,  B01J20/30 ,  B01J23/00 ,  B01J23/14 ,  B01J20/00 ,  B01J23/02

CPC分类号： B01J23/14 ,  B01D53/02 ,  B01D53/9481 ,  B01J20/06 ,  B01J20/30 ,  B01J23/002 ,  B01D2253/104 ,  B01D2253/112 ,  B01D2257/404 ,  B01J2523/00

摘要： A nitrogen oxide absorbing material, comprising a hollandite-type complex oxide having main metal elements comprising minimally of aluminum and tin, or zinc and tin, and a method of using that nitrogen oxide absorbing material comprising the steps of contacting the nitrogen oxide absorbing material with a gas containing nitrogen oxides. The method of reducing the adsorbed nitrogen oxides on the nitrogen oxide absorbing material includes the steps of releasing the nitrogen oxides from the nitrogen oxide absorbing material, and of reducing the released nitrogen oxides with a three way catalyst or other nitrogen oxide reducing catalysts.

摘要翻译： 一种氮氧化物吸收材料，包括具有最低限度的铝和锡或锌和锡的主要金属元素的胡萝卜型复合氧化物，以及使用该氮氧化物吸收材料的方法，包括以下步骤：使氮氧化物吸收材料与 含有氮氧化物的气体。 减少氮氧化物吸收材料上吸附的氮氧化物的方法包括以下步骤：从氮氧化物吸收材料中释放氮氧化物，并用三元催化剂或其它氮氧化物还原催化剂还原释放的氮氧化物。

公开(公告)号：US5128285A

公开(公告)日：1992-07-07

申请号：US335844

申请日：1989-04-10

申请人： Hitoshi Yokoi ,  Satoshi Iio ,  Masakazu Watanabe

发明人： Hitoshi Yokoi ,  Satoshi Iio ,  Masakazu Watanabe

IPC分类号： C04B35/597 ,  C04B35/80

CPC分类号： C04B35/806 ,  C04B35/597

摘要： Silicon oxynitride sintered body is obtained by sintering a base starting material mixture comprising silicon oxynitride componentand a solution of at least one alkoxide selected from alkoxides of at least one element selected from the group consisting of Al, Sc, Y and rare-earth elements.Fiber-reinforced ceramic sintered body is obtained by sintering the base starting material mixture further inclusing 5-40% by weight of SiC whiskers and/or .beta.-Si.sub.3 N.sub.4 whiskers, wherein alkoxide component is 0.5-30% by weight as oxides.The alkoxide component is deposited on the other material powders and calcined to provide well dispersed oxide layer on the powder surface which forms uniform matrix phase giving high density by sintering. Sintered bodies (with or without whiskers) have low deterioration at high temperatures.

摘要翻译： 氮氧化硅烧结体是通过将包含氮氧化硅成分的基底原料混合物和至少一种选自Al，Sc，Y和稀土元素中的至少一种元素的醇盐的醇盐的溶液进行烧结而获得的。 纤维增强陶瓷烧结体通过烧结基础原料混合物而获得，其进一步包含5-40重量％的SiC晶须和/或β-Si 3 N 4晶须，其中醇盐组分为氧化物的0.5-30重量％。 将醇盐组分沉积在其他材料粉末上并煅烧，以在粉末表面上提供良好分散的氧化物层，其形成均匀的基质相，通过烧结提供高密度。 烧结体（有或没有晶须）在高温下具有低的劣化。

公开(公告)号：US07339455B2

公开(公告)日：2008-03-04

申请号：US11074075

申请日：2005-03-08

申请人： Koichi Fujita ,  Masatoshi Ueki ,  Hitoshi Yokoi

发明人： Koichi Fujita ,  Masatoshi Ueki ,  Hitoshi Yokoi

IPC分类号： H01C3/04

CPC分类号： G01K7/18 ,  G01K13/02 ,  G01K2013/024 ,  G01K2205/04 ,  H01C7/006 ,  H01C7/008

摘要： A platinum temperature sensor incorporating an evaporation-suppressing layer containing platinum in the vicinity of the platinum thin-film resistor of the sensor. The evaporation-suppressing layer is preferably positioned between the platinum resistor and a porous layer that is formed close to the platinum resistor and in contact with the evaporation-suppressing layer.

摘要翻译： 在传感器的铂薄膜电阻附近配有含有铂的蒸发抑制层的铂温度传感器。 蒸发抑制层优选位于铂电阻器和靠近铂电阻器并与蒸发抑制层接触的多孔层之间。

公开(公告)号：US06627964B2

公开(公告)日：2003-09-30

申请号：US09924551

申请日：2001-08-09

申请人： Kenshiro Nakashima ,  Yasuo Okuyama ,  Hitoshi Yokoi ,  Takafumi Oshima

发明人： Kenshiro Nakashima ,  Yasuo Okuyama ,  Hitoshi Yokoi ,  Takafumi Oshima

IPC分类号： H01L2966

CPC分类号： G01N27/129

摘要： A gas sensor having a pn junction including two discrete electrical conductive-type layers, namely, a first semiconductor layer and a second semiconductor layer, disposed in contact with each other. Ohmic electrodes are formed on the respective surfaces of the semiconductor layers. A catalytic layer containing a metallic catalytic component which dissociates hydrogen atom from a molecule having hydrogen atom is formed on one of the ohmic electrodes. The pn junction diode-type gas sensor has a simple constitution, exhibits a small change in diode characteristics with time in long-term service and is capable of detecting a gas concentration of a molecule having a hydrogen atom, for example, H2, NH3, H2S, a hydrocarbon and the like, contained in a sample gas.