Acoustic resonator structure comprising a bridge
    12.
    发明申请
    Acoustic resonator structure comprising a bridge 有权
    包括桥梁的声谐振器结构

    公开(公告)号:US20100327697A1

    公开(公告)日:2010-12-30

    申请号:US12490525

    申请日:2009-06-24

    IPC分类号: H01L41/04 H03H9/15

    摘要: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

    摘要翻译: 声谐振器包括第一电极,第二电极和设置在第一和第二电极之间的压电层。 声谐振器还包括设置在第一电极,第二电极和压电层下方的反射元件。 反射元件,第一电极,第二电极和压电层的重叠包括声谐振器的有效区域。 声谐振器还包括与声谐振器的有源区域的终端相邻的桥。

    Integrated polysilicon fuse and diode
    13.
    发明授权
    Integrated polysilicon fuse and diode 失效
    集成多晶硅熔丝和二极管

    公开(公告)号:US06670824B2

    公开(公告)日:2003-12-30

    申请号:US10103495

    申请日:2002-03-20

    IPC分类号: H03K19177

    摘要: An integrated polysilicon fuse and diode and methods of making the same are provided. The integrated polysilicon fuse and diode combination may be implemented in a programmable cross point fuse array. The integrated polysilicon fuse and diode may be used in a random access memory (RAM) cell. The polysilicon diode may be isolated from a substrate and other devices, use less area on a substrate, and cost less to manufacture compared to other diodes.

    摘要翻译: 提供集成多晶硅熔丝和二极管及其制造方法。 集成多晶硅熔丝和二极管组合可以在可编程交叉点熔丝阵列中实现。 集成多晶硅保险丝和二极管可以用在随机存取存储器(RAM)单元中。 多晶硅二极管可以与衬底和其他器件隔离,在衬底上使用较少的面积,并且与其它二极管相比成本较低。

    Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making
    14.
    发明授权
    Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making 有权
    具有多层不同压电材料的薄膜体声共振器及制作方法

    公开(公告)号:US09065421B2

    公开(公告)日:2015-06-23

    申请号:US13362321

    申请日:2012-01-31

    摘要: A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.

    摘要翻译: 薄膜体声波谐振器(FBAR)包括第一电极,具有第一c轴取向的第一压电层,在第一电极上具有在第一压电层上具有第二c轴取向的第二压电层,以及 在第二压电层上的第二电极。 第一和第二压电层由相应的不同的压电材料制成。 通过选择第一和第二c轴取向分别相同或不同,可以将FBAR设置为具有不同的谐振频率。 因此可以扩展FBAR的高低频范围。

    ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION
    15.
    发明申请
    ACOUSTIC RESONATOR STRUCTURE HAVING AN ELECTRODE WITH A CANTILEVERED PORTION 审中-公开
    具有可拆卸部分的电极的声学谐振器结构

    公开(公告)号:US20120326807A1

    公开(公告)日:2012-12-27

    申请号:US13529192

    申请日:2012-06-21

    IPC分类号: H03H9/17

    摘要: An acoustic resonator comprises (a) a substrate having atop surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween; (b) an acoustic mirror having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the substrate; (c) a first electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the acoustic mirror; (d) a piezoelectric layer having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the first electrode; and (e) a second electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween. The bottom surface is formed on the top surface of the piezoelectric layer, wherein the overlapped area of body portions of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer and the second electrode is defined as an active area A.

    摘要翻译: 声谐振器包括(a)具有顶表面和底表面的基底,第一端部和相对的第二端部以及限定在其间的主体部分; (b)具有顶表面和底表面的声反射镜,第一端部和相对的第二端部以及限定在其间的主体部分,其中底表面形成在基板的顶表面上; (c)具有顶表面和底表面的第一电极,第一端部和相对的第二端部,以及限定在其间的主体部分,其中所述底表面形成在所述声反射镜的顶表面上; (d)具有顶表面和底表面的压电层,第一端部和相对的第二端部以及限定在其间的主体部分,其中所述底表面形成在所述第一电极的顶表面上; 和(e)具有顶表面和底表面的第二电极,第一端部和相对的第二端部,以及限定在其间的主体部分。 底表面形成在压电层的顶表面上,其中衬底,声镜,第一电极,压电层和第二电极的主体部分的重叠区域被定义为有效区域A.

    Polarity determining seed layer and method of fabricating piezoelectric materials with specific C-axis

    公开(公告)号:US09847768B2

    公开(公告)日:2017-12-19

    申请号:US12623746

    申请日:2009-11-23

    摘要: An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction.

    Acoustic resonator structure comprising a bridge
    18.
    发明授权
    Acoustic resonator structure comprising a bridge 有权
    包括桥梁的声谐振器结构

    公开(公告)号:US08248185B2

    公开(公告)日:2012-08-21

    申请号:US12490525

    申请日:2009-06-24

    摘要: An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

    摘要翻译: 声谐振器包括第一电极,第二电极和设置在第一和第二电极之间的压电层。 声谐振器还包括设置在第一电极,第二电极和压电层下方的反射元件。 反射元件,第一电极,第二电极和压电层的重叠包括声谐振器的有效区域。 声谐振器还包括与声谐振器的有源区域的终端相邻的桥。

    POLARITY DETERMINING SEED LAYER AND METHOD OF FABRICATING PIEZOELECTRIC MATERIALS WITH SPECIFIC C-AXIS
    19.
    发明申请
    POLARITY DETERMINING SEED LAYER AND METHOD OF FABRICATING PIEZOELECTRIC MATERIALS WITH SPECIFIC C-AXIS 有权
    极性测定种子层和制备具有特定C轴的压电材料的方法

    公开(公告)号:US20110121689A1

    公开(公告)日:2011-05-26

    申请号:US12623746

    申请日:2009-11-23

    IPC分类号: H01L41/04 H01L41/22

    摘要: An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction.

    摘要翻译: 声谐振器包括第一电极,第二电极和设置在第一电极和第二电极之间的压电层,并且包括具有取向的C轴。 偏振确定种子层(PDSL)设置在压电层下方,种子层包含金属 - 非金属化合物。 在衬底上制造压电层的方法包括在衬底上形成偏振确定种子层(PDSL)的第一层。 该方法还包括在第一层上形成PDSL的第二层。 该方法还包括在PDSL的第二层上形成压电材料的第一层; 以及在所述压电材料的所述第一层上形成所述压电材料的第二层。 压电材料包括沿着第一方向取向的压缩轴线(C轴)。