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    CONFIGURABLE 2-WIRE/3-WIRE SERIAL COMMUNICATIONS INTERFACE
    12.
    发明申请
    CONFIGURABLE 2-WIRE/3-WIRE SERIAL COMMUNICATIONS INTERFACE 有权
    可配置2线/ 3线串行通信接口

    公开(公告)号：US20120117284A1

    公开(公告)日：2012-05-10

    申请号：US13289302

    申请日：2011-11-04

    申请人： William David Southcombe ,  Christopher Truong Ngo ,  David E. Jones ,  Chris Levesque ,  Scott Yoder ,  Terry J. Stockert

    发明人： William David Southcombe ,  Christopher Truong Ngo ,  David E. Jones ,  Chris Levesque ,  Scott Yoder ,  Terry J. Stockert

    IPC分类号： G06F13/42

    CPC分类号： G06F13/42 ,  G06F13/4291 ,  Y02D10/14 ,  Y02D10/151

    摘要： A configurable 2-wire/3-wire serial communications interface (C23SCI), which includes start-of-sequence (SOS) detection circuitry and sequence processing circuitry, is disclosed. When the SOS detection circuitry is coupled to a 2-wire serial communications bus, the SOS detection circuitry detects an SOS of a received sequence based on a serial data signal and a serial clock signal. When the SOS detection circuitry is coupled to a 3-wire serial communications bus, the SOS detection circuitry detects the SOS of the received sequence based on a chip select (CS) signal. In response to detecting the SOS, the SOS detection circuitry provides an SOS detection signal to the sequence processing circuitry, which initiates processing of the received sequence using the serial data signal and the serial clock signal. The received sequence is associated with one of multiple serial communications protocols.

    摘要翻译： 公开了一种可配置的2线/ 3线串行通信接口（C23SCI），其包括序列启动（SOS）检测电路和序列处理电路。 当SOS检测电路耦合到2线串行通信总线时，SOS检测电路基于串行数据信号和串行时钟信号检测接收序列的SOS。 当SOS检测电路耦合到3线串行通信总线时，SOS检测电路基于芯片选择（CS）信号检测接收到的序列的SOS。 响应于检测到SOS，SOS检测电路向序列处理电路提供SOS检测信号，其使用串行数据信号和串行时钟信号来启动接收到的序列的处理。 所接收的序列与多个串行通信协议之一相关联。

    SELECTABLE PA BIAS TEMPERATURE COMPENSATION CIRCUITRY
    13.
    发明申请
    SELECTABLE PA BIAS TEMPERATURE COMPENSATION CIRCUITRY 有权
    可选PA偏置温度补偿电路

    公开(公告)号：US20120052825A1

    公开(公告)日：2012-03-01

    申请号：US13288318

    申请日：2011-11-03

    申请人： William David Southcombe ,  David E. Jones ,  Hui Liu ,  Chris Levesque ,  Scott Yoder ,  Terry J. Stockert

    发明人： William David Southcombe ,  David E. Jones ,  Hui Liu ,  Chris Levesque ,  Scott Yoder ,  Terry J. Stockert

    IPC分类号： H04B1/04

    CPC分类号： H03F1/30 ,  H03F3/19 ,  H03F3/2175 ,  H03F3/245 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/447 ,  H03F2203/7209

    摘要： Radio frequency (RF) power amplifier (PA) circuitry, which transmits RF signals is disclosed. The RF PA circuitry includes a final stage, a final stage current digital-to-analog converter (IDAC), and a final stage temperature compensation circuit. A final stage current reference circuit may provide an uncompensated final stage reference current to the final stage temperature compensation circuit, which receives and temperature compensates the uncompensated final stage reference current to provide a final stage reference current. The final stage IDAC uses the final stage reference current in a digital-to-analog conversion to provide a final stage bias signal to bias the final stage. The temperature compensation provided by the final stage temperature compensation circuit is selectable.

    摘要翻译： 公开了发射RF信号的射频（RF）功率放大器（PA）电路。 RF PA电路包括最后级，最后一级电流数模转换器（IDAC）和最终级温度补偿电路。 最终级电流参考电路可以向最终级温度补偿电路提供未补偿的最终级参考电流，其接收和温度补偿未补偿的最终级参考电流以提供最终级参考电流。 最终阶段IDAC在数模转换中使用最后阶段参考电流，以提供最终阶段偏置信号来偏向最后阶段。 由最终级温度补偿电路提供的温度补偿是可选择的。

    ESD protection of an RF PA semiconductor die using a PA controller semiconductor die
    17.
    发明授权
    ESD protection of an RF PA semiconductor die using a PA controller semiconductor die 有权
    使用PA控制器半导体管芯的RF PA半导体管芯的ESD保护

    公开(公告)号：US08842399B2

    公开(公告)日：2014-09-23

    申请号：US13288373

    申请日：2011-11-03

    申请人： David E. Jones ,  William David Southcombe ,  Chris Levesque ,  Scott Yoder ,  Terry J. Stockert

    发明人： David E. Jones ,  William David Southcombe ,  Chris Levesque ,  Scott Yoder ,  Terry J. Stockert

    IPC分类号： H02H3/22 ,  H03F1/52 ,  H03F3/24 ,  H03F3/19 ,  H02H9/04

    CPC分类号： H03F1/52 ,  H02H9/046 ,  H03F3/19 ,  H03F3/245

    摘要： A power amplifier (PA) controller semiconductor die and a first radio frequency (RF) PA semiconductor die are disclosed. The PA controller semiconductor die includes a first electro-static discharge (ESD) protection circuit, which ESD protects and provides a first ESD protected signal. The RF PA semiconductor die receives the first ESD protected signal. In one embodiment of the PA controller semiconductor die, the first ESD protected signal is an envelope power supply signal. The PA controller semiconductor die may be a Silicon complementary metal-oxide-semiconductor (CMOS) semiconductor die and the RF PA semiconductor die may be a Gallium Arsenide semiconductor die.

    摘要翻译： 公开了功率放大器（PA）控制器半导体管芯和第一射频（RF）PA半导体管芯）。 PA控制器半导体管芯包括第一静电放电（ESD）保护电路，其ESD保护并提供第一ESD保护信号。 RF PA半导体管芯接收第一个ESD保护信号。 在PA控制器半导体管芯的一个实施例中，第一ESD保护信号是包络电源信号。 PA控制器半导体管芯可以是硅互补金属氧化物半导体（CMOS）半导体管芯，并且RF PA半导体管芯可以是砷化镓半导体管芯。