公开(公告)号：US08434180B2

公开(公告)日：2013-05-07

申请号：US12656985

申请日：2010-02-22

申请人： Sang Up Lee ,  Sung Jin Kim ,  Sang Yeon Pyo ,  Hong Seok Ko ,  Jae Hong Kim ,  Myung Sun Kang

发明人： Sang Up Lee ,  Sung Jin Kim ,  Sang Yeon Pyo ,  Hong Seok Ko ,  Jae Hong Kim ,  Myung Sun Kang

IPC分类号： D06F33/00 ,  D06F31/00

CPC分类号： D06F33/02 ,  D06F29/00

摘要： A washing machine and a control method thereof are disclosed. The washing machine has a plurality of washing tubs to clean laundry in different ways classified according to capacity and types of clothing. Different washing tubs simultaneously stop operations or are stopped at different times spaced apart from each other by a predetermined time, although washing tubs have different washing conditions (e.g., different input times of laundry, different amounts of laundry, different washing courses, etc.) when laundry is cleaned using the washing tubs.

摘要翻译： 公开了洗衣机及其控制方法。 洗衣机具有多个洗涤桶，以根据衣物的容量和类型分类的不同方式来清洗衣物。 尽管洗涤桶具有不同的洗涤条件（例如，不同的衣物输入时间，不同的衣物量，不同的洗涤程序等），不同的洗涤桶同时停止操作或者在彼此间隔开的不同时间停止预定的时间。 当使用洗涤桶清洗衣物时。

公开(公告)号：US08413011B2

公开(公告)日：2013-04-02

申请号：US12651586

申请日：2010-01-04

申请人： Yong June Kim ,  Jae Hong Kim ,  Jun Jin Kong

发明人： Yong June Kim ,  Jae Hong Kim ,  Jun Jin Kong

IPC分类号： H03M13/00

CPC分类号： G06F11/1008 ,  H03M13/1105 ,  H03M13/1108

摘要： A 1-bit error correction method is provided. In the method, a variable node at which an error has occurred is detected based on a number of unsatisfied check nodes that do not satisfy a parity condition among check nodes connected to each of variable nodes and an error in a bit corresponding to the detected variable node is corrected.

摘要翻译： 提供1位纠错方法。 在该方法中，基于在连接到每个可变节点的校验节点中不满足奇偶校验条件的不满足校验节点的数量和对应于检测变量的位的错误来检测发生错误的变量节点 节点被更正。

公开(公告)号：US08279668B2

公开(公告)日：2012-10-02

申请号：US12801532

申请日：2010-06-14

申请人： Kyoung Lae Cho ,  Yoon Dong Park ,  Jun Jin Kong ,  Jong Han Kim ,  Jae Hong Kim ,  Young Hwan Lee ,  Heeseok Eun ,  Seung-Hwan Song

发明人： Kyoung Lae Cho ,  Yoon Dong Park ,  Jun Jin Kong ,  Jong Han Kim ,  Jae Hong Kim ,  Young Hwan Lee ,  Heeseok Eun ,  Seung-Hwan Song

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C29/00 ,  G11C2216/14

摘要： A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.

摘要翻译： 提供了存储器编程设备和/或方法。 存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。 数据存储单元可以被配置为存储数据页。 第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。 索引存储单元可以被配置为存储所生成的索引信息。 编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。 第一计数单元可以将生成的索引信息发送到编程单元。 存储器编程装置可以监视存储器单元中阈值电压的分布状态。

公开(公告)号：US08276046B2

公开(公告)日：2012-09-25

申请号：US12219103

申请日：2008-07-16

申请人： Seung-Hwan Song ,  Kyoung Lae Cho ,  Jun Jin Kong ,  Jae Hong Kim

发明人： Seung-Hwan Song ,  Kyoung Lae Cho ,  Jun Jin Kong ,  Jae Hong Kim

IPC分类号： H03M13/00

CPC分类号： G11C11/56 ,  G06F11/1012 ,  G11C29/00

摘要： Example embodiments relate to an apparatus which may determine a length of data to be stored in a memory cell, and may store the data in a memory based on the determined length. A memory data storage apparatus according to example embodiments may, include: a determination unit that may determine a number of bits of data and a number of bits of data detection information to be stored in a memory cell; a data receiving unit that may receive data corresponding to the determined number of bits; an error correction coding unit that may perform an error correction coding with respect to the received data and generate data detection information corresponding to the number of bits of the data detection information; and a data storage unit that may store the received data and generated data detection information in the memory cell.

摘要翻译： 示例性实施例涉及可以确定要存储在存储器单元中的数据的长度的装置，并且可以基于所确定的长度将数据存储在存储器中。 根据示例实施例的存储器数据存储装置可以包括：确定单元，其可以确定要存储在存储器单元中的数据的位数和数据检测信息的位数; 数据接收单元，其可以接收与所确定的位数相对应的数据; 纠错编码单元，其可以对所接收的数据执行纠错编码，并生成与数据检测信息的位数相对应的数据检测信息; 以及数据存储单元，其可以将所接收的数据和生成的数据检测信息存储在存储单元中。

公开(公告)号：USD664688S1

公开(公告)日：2012-07-31

申请号：US29374895

申请日：2011-10-21

申请人： Jae Hong Kim ,  Pil Joong Ham

设计人： Jae Hong Kim ,  Pil Joong Ham

公开(公告)号：US08171382B2

公开(公告)日：2012-05-01

申请号：US12149214

申请日：2008-04-29

申请人： Heeseok Eun ,  Jae Hong Kim ,  Sung Chung Park

发明人： Heeseok Eun ,  Jae Hong Kim ,  Sung Chung Park

IPC分类号： H03M13/00

CPC分类号： H03M13/2906 ,  G06F11/1072 ,  H03M13/2732

摘要： An encoding system for encoding error control codes may include a first encoder configured to encode an input bit stream to generate first bit streams of C-bits, where c is an integer greater than zero, and a second encoder may be configured to receive the first bit streams and shuffle data of the received first bit streams to generate second bit streams. The data shuffling of the first bit streams may adjust an error distribution of the second bit streams. An encoding method may include encoding an input bit stream to generate first bit streams of C-bits, and receiving the first bit streams and shuffling data of the received first bit streams to generate second bit streams. An error distribution of the second bit streams may be adjusted based on the data shuffling.

摘要翻译： 用于编码错误控制代码的编码系统可以包括第一编码器，其被配置为编码输入比特流以产生C比特的第一比特流，其中c是大于零的整数，并且第二编码器可以被配置为接收第一 对流接收的第一位流进行数据流和混洗，生成第二位流。 第一比特流的数据混洗可以调整第二比特流的误差分布。 编码方法可以包括编码输入比特流以产生C比特的第一比特流，以及接收所接收的第一比特流的第一比特流和混洗数据以产生第二比特流。 可以基于数据混洗来调整第二比特流的误差分布。

公开(公告)号：US08080472B2

公开(公告)日：2011-12-20

申请号：US12472721

申请日：2009-05-27

申请人： Joon Seok Oh ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Nam Yeal Lee ,  Jae Hong Kim

发明人： Joon Seok Oh ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Nam Yeal Lee ,  Jae Hong Kim

IPC分类号： H01L21/425 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24612 ,  H01L2924/00

摘要： A metal line having a MoxSiy/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoxSiy layer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer.

摘要翻译： 提出了具有半导体器件的MoxSiy / Mo扩散阻挡层的金属线及其制造方法。 金属线包括绝缘层，扩散阻挡层和金属层。 绝缘层形成在半导体衬底上并具有金属线形成区域。 扩散阻挡层形成在绝缘层的金属线形成区域的表面上，并且具有由MoxSiy层和Mo层构成的堆叠结构。 金属层形成在填充绝缘层的金属线形成区域的扩散阻挡层上。

公开(公告)号：US20100287712A1

公开(公告)日：2010-11-18

申请号：US12662718

申请日：2010-04-29

申请人： Sang Yeon Pyo ,  Sung Jin Kim ,  Hong Seok Ko ,  Jae Hong Kim ,  Sang Up Lee ,  Myung Sun Kang

发明人： Sang Yeon Pyo ,  Sung Jin Kim ,  Hong Seok Ko ,  Jae Hong Kim ,  Sang Up Lee ,  Myung Sun Kang

IPC分类号： D06F33/00 ,  D06F31/00

CPC分类号： D06F31/00 ,  D06F33/02 ,  D06F39/006 ,  D06F2202/085 ,  D06F2202/12 ,  Y02B40/56

摘要： Disclosed herein are a washing machine having a plurality of washtubs and a control method thereof. In the washing machine having a plurality of washtubs, if it is determined that a washtub that is not in operation is present, dozens of liters of water used in a washtub that is in operation are moved into and stored in the non-operating washtub rather than being discharged to the outside. The moved water may be utilized in a following washing or rinsing stage of the washtub, or a washing or rinsing stage of the other washtub.

摘要翻译： 本发明公开了一种具有多个洗衣盆的洗衣机及其控制方法。 在具有多个洗涤桶的洗衣机中，如果确定存在不在运行中的洗涤桶，则在运行的洗涤桶中使用的数十升的水被移入并存储在非操作洗涤桶中 比排到外面。 移动的水可以用于洗涤桶的后续洗涤或漂洗阶段，或者另一个洗涤桶的洗涤或漂洗阶段。

公开(公告)号：US07777336B2

公开(公告)日：2010-08-17

申请号：US12329718

申请日：2008-12-08

申请人： Jeong Tae Kim ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Joon Seok Oh ,  Nam Yeal Lee ,  Jae Hong Kim

发明人： Jeong Tae Kim ,  Seung Jin Yeom ,  Baek Mann Kim ,  Dong Ha Jung ,  Joon Seok Oh ,  Nam Yeal Lee ,  Jae Hong Kim

IPC分类号： H01L21/48

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuxOy layer, an IrxOy layer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

摘要翻译： 半导体器件的金属线包括形成在半导体衬底上的绝缘层，并且在绝缘层中形成金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层，扩散层具有Ru层，RuxOy层，IrxOy层和Ti层的多层结构。 在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

公开(公告)号：US20100027342A1

公开(公告)日：2010-02-04

申请号：US12461060

申请日：2009-07-30

申请人： Heeseok Eun ,  Jae Hong Kim ,  Kyoung Lae Cho

发明人： Heeseok Eun ,  Jae Hong Kim ,  Kyoung Lae Cho

IPC分类号： G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5642 ,  G11C16/3418 ,  G11C16/3427

摘要： A memory device and a memory data determination method are provided. The memory device may estimate a threshold voltage shift of a first memory cell based on data before the first memory cell is programmed and a target program threshold voltage of the first memory cell. The memory device may generate a metric of a threshold voltage shift of a second memory cell based on the estimated threshold voltage shift of the first memory cell. Also, the memory device may determine data stored in the second memory cell based on the metric.

摘要翻译： 提供存储器件和存储器数据确定方法。 存储器件可以基于第一存储器单元被编程之前的数据和第一存储器单元的目标程序阈值电压来估计第一存储器单元的阈值电压偏移。 存储器件可以基于第一存储器单元的估计的阈值电压偏移来产生第二存储器单元的阈值电压偏移的度量。 此外，存储器设备可以基于度量来确定存储在第二存储器单元中的数据。