公开(公告)号：US20190118332A1

公开(公告)日：2019-04-25

申请号：US16162914

申请日：2018-10-17

申请人： EBARA CORPORATION

发明人： Mitsunori SUGIYAMA ,  Taro TAKAHASHI ,  Yoichi KOBAYASHI

IPC分类号： B24B37/013 ,  B24B37/12 ,  B24B49/12 ,  B24B57/02

摘要： A polishing table holds a polishing pad. A top ring holds a semiconductor wafer. A swing arm holds the top ring. The swing arm swings around a swing center on the swing arm during polishing. An optical sensor is disposed on the polishing table and measures an optical characteristic changeable in accordance with a variation in film thickness of the semiconductor wafer. A fluid supply control apparatus determines a distance from an axis of rotation to the optical sensor when the semiconductor wafer is rotated by the top ring. An end point detection section detects a polishing end point indicating an end of polishing based on the optical characteristic measured by the optical sensor and the determined distance.

公开(公告)号：US20150332943A1

公开(公告)日：2015-11-19

申请号：US14808252

申请日：2015-07-24

申请人： EBARA CORPORATION

发明人： Itsuki KOBATA ,  Yoichi KOBAYASHI ,  Katsutoshi ONO ,  Masaki KINOSHITA ,  Toshifumi KIMBA

IPC分类号： H01L21/67 ,  B24B37/005 ,  B24B49/12 ,  H01L21/687

CPC分类号： B24B37/26 ,  B24B37/005 ,  B24B37/013 ,  B24B37/04 ,  B24B37/042 ,  B24B37/10 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67253 ,  H01L21/68721 ,  H01L22/26

摘要： A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

摘要翻译： 提供了用于研磨衬底的抛光装置。 抛光装置包括：抛光台，其保持抛光垫; 顶环，构造成将衬底压靠在抛光垫上; 第一和第二光学头，每个被配置为将光施加到衬底并且接收来自衬底的反射光; 每个光谱分别被配置成在每个波长处测量接收到的反射光的强度; 以及处理器，被配置为产生指示反射光的强度和波长之间的关系的光谱。 第一光学头被布置为面对基板的中心，并且第二光学头被布置成面对基板的周边部分。

公开(公告)号：US20150266159A1

公开(公告)日：2015-09-24

申请号：US14664691

申请日：2015-03-20

申请人： EBARA CORPORATION

发明人： Yoichi SHIOKAWA ,  Keita YAGI ,  Yoichi KOBAYASHI

IPC分类号： B24B37/005 ,  B24B49/04 ,  H01L21/66 ,  B24B37/04 ,  H01L21/304 ,  H01L21/67

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B49/04 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

摘要： The polishing device includes an edge chamber that presses the surface to be polished against the polishing pad by pressing a back side of the surface to be polished of the wafer, a thickness measuring unit that estimates a remaining film profile of the surface to be polished of the wafer in realtime during polishing, and a closed loop control device that controls a pressing force on the back side of the surface to be polished by the edge chamber in accordance with a measurement result by the thickness measuring unit during polishing. The closed loop control device controls not only the pressing by the edge chamber during polishing, but also the pressure of a retainer ring as a periphery of the edge chamber affecting the pressing of the surface to be polished against the polishing pad.

摘要翻译： 抛光装置包括：边缘室，其通过按压晶片的待抛光表面的背面将待抛光表面压靠抛光垫;厚度测量单元，其估计要抛光表面的剩余膜轮廓 在抛光期间实时地实现晶片，以及闭环控制装置，其根据研磨期间的厚度测量单元的测量结果来控制由边缘室根据待抛光表面的背侧的按压力。 闭环控制装置不仅控制抛光期间边缘室的按压，而且控制作为边缘室的周边的保持环的压力，从而影响待抛光表面对抛光垫的冲压。

公开(公告)号：US20150017880A1

公开(公告)日：2015-01-15

申请号：US14327535

申请日：2014-07-09

申请人： EBARA CORPORATION

发明人： Toshikazu NOMURA ,  Takeshi IIZUMI ,  Katsuhide WATANABE ,  Yoichi KOBAYASHI

IPC分类号： B24B37/013 ,  H01L21/66 ,  B24B49/12 ,  G01B11/06 ,  B24B37/005 ,  B24B37/34

CPC分类号： B24B37/013 ,  B24B37/005 ,  B24B37/34 ,  B24B49/12 ,  G01B11/0633 ,  H01L22/12 ,  H01L22/26

摘要： A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area.

摘要翻译： 公开了能够提高膜厚测量精度的膜厚测量装置和膜厚测量方法。 膜厚测量装置包括：被配置为水平地支撑基板的基板台;漂洗水供给结构，其构造成在基板载台上的基板的整个表面上提供冲洗水;膜厚测量头，被配置为将光传送到 衬底载台上的衬底表面的测量区域产生来自测量区域的反射光谱，并从光谱确定衬底的膜厚度，以及构造成形成气体流的流体供给结构 在光的路径上并且将气体的流量供应到测量区域上。

公开(公告)号：US20140004773A1

公开(公告)日：2014-01-02

申请号：US14017620

申请日：2013-09-04

申请人： KABUSHIKI KAISHA TOSHIBA ,  EBARA CORPORATION

发明人： Noburu SHIMIZU ,  Shinro OHTA ,  Koji MARUYAMA ,  Yoichi KOBAYASHI ,  Ryuichiro MITANI ,  Shunsuke NAKAI ,  Atsushi SHIGETA

IPC分类号： B24B49/12 ,  B24B49/04 ,  B24B37/013

CPC分类号： B24B49/04 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  B24D7/12 ,  G01B11/0675 ,  G01N21/55 ,  G01N21/9501 ,  G05B19/406 ,  G05B19/4065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

摘要翻译： 处理终点检测方法通过计算诸如基板的工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）。 该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值 反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值 并且通过在工件的加工期间检测特征点来检测工件的加工终点。

公开(公告)号：US20130149938A1

公开(公告)日：2013-06-13

申请号：US13712014

申请日：2012-12-12

申请人： EBARA CORPORATION

发明人： Yoichi KOBAYASHI ,  Shinrou OHTA ,  Toshifumi KIMBA ,  Masaki KINOSHITA

IPC分类号： B24B49/12

CPC分类号： B24B49/12 ,  B24B37/013

摘要： A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.

摘要翻译： 提供了一种制造用于选择光学抛光终点检测中的光的波长的图的方法。 该方法包括通过抛光垫抛光具有膜的基板的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 计算各波长的反射光的相对反射率; 确定反射光的波长，其指示随抛光时间变化的相对反射率的局部最大点和局部最小点; 识别指示表示局部最大点和局部最小点的波长的时间点; 并且将由波长相对应的波长和时间点指定的坐标绘制到具有指示光的波长和抛光时间的坐标轴的坐标系上。