公开(公告)号：US20170190020A1

公开(公告)日：2017-07-06

申请号：US15304829

申请日：2015-04-10

申请人： EBARA CORPORATION

发明人： Yoichi KOBAYASHI ,  Keita YAGI ,  Masaki KINOSHITA ,  Yoichi SHIOKAWA

IPC分类号： B24B49/05 ,  H01L21/67 ,  H01L21/66 ,  B24B49/03

CPC分类号： B24B49/05 ,  B24B37/013 ,  B24B37/105 ,  B24B37/32 ,  B24B37/34 ,  B24B49/02 ,  B24B49/03 ,  B24B49/04 ,  B24B49/12 ,  H01L21/67 ,  H01L22/12 ,  H01L22/26

摘要： The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

公开(公告)号：US20160284617A1

公开(公告)日：2016-09-29

申请号：US15181236

申请日：2016-06-13

申请人： EBARA CORPORATION

发明人： Yoichi KOBAYASHI ,  Keita YAGI

IPC分类号： H01L21/66 ,  H01L21/321 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/306

CPC分类号： H01L22/26 ,  B24B37/005 ,  B24B49/105 ,  B24B49/12 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/67063 ,  H01L21/67092 ,  H01L21/67253 ,  H01L22/12

摘要： A polishing apparatus capable of achieving a good control operation for a distribution of remaining film thickness is disclosed. The polishing apparatus includes: a top ring configured to apply pressures separately to zones on a back surface of a substrate to press a front surface of the substrate against a polishing pad; a film-thickness sensor configured to obtain a film-thickness signal that varies in accordance with a film thickness of the substrate; and a polishing controller configured to manipulate the pressures. The polishing controller calculates indexes of a remaining film thickness in zones on the front surface of the substrate, manipulate the pressures based on the indexes for controlling a distribution of the remaining film thickness, and update at least one of control parameters using polishing data obtained during polishing of the substrate.

公开(公告)号：US20170148655A1

公开(公告)日：2017-05-25

申请号：US15357706

申请日：2016-11-21

申请人： EBARA CORPORATION

发明人： Yoichi KOBAYASHI ,  Yoichi SHIOKAWA ,  Katsuhide WATANABE

IPC分类号： H01L21/67 ,  H01L21/3105 ,  H01L21/66

CPC分类号： H01L21/67253 ,  B24B37/013 ,  B24B37/105 ,  B24B37/205 ,  B24B37/32 ,  B24B49/105 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/67092 ,  H01L22/12 ,  H01L22/26

摘要： A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.

公开(公告)号：US20160325399A1

公开(公告)日：2016-11-10

申请号：US15215343

申请日：2016-07-20

申请人： EBARA CORPORATION

发明人： Itsuki KOBATA ,  Yoichi KOBAYASHI ,  Katsutoshi ONO ,  Masaki KINOSHITA ,  Toshifumi KIMBA

IPC分类号： B24B37/26 ,  H01L21/66 ,  B24B49/12 ,  B24B37/013 ,  B24B37/04 ,  B24B37/10 ,  H01L21/3105 ,  B24B37/005

摘要： A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

公开(公告)号：US20150017887A1

公开(公告)日：2015-01-15

申请号：US14327522

申请日：2014-07-09

申请人： EBARA CORPORATION

发明人： Yoichi KOBAYASHI ,  Katsuhide WATANABE ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Masaki KINOSHITA

IPC分类号： B24B37/013 ,  G01J3/42 ,  G01B11/06

CPC分类号： B24B37/013 ,  G01B11/0625 ,  G01B11/0683 ,  G01B11/0691

摘要： A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness.

摘要翻译： 公开了一种能够实现高精度抛光结果的抛光装置。 抛光装置包括：在静止状态下测量基板的膜厚的直列式膜厚测量装置，以及设置在抛光台中的具有膜厚度传感器的原位光谱膜厚监视器， - 平面光谱膜厚度监视器被配置为从由在线膜厚测量装置测量的初始膜厚度减去由基板抛光之前的原位光谱膜厚度监测器测量的初始膜厚度 在对基板进行研磨之前，为了确定修正值，将修正值与基板正在研磨时测定的膜厚相加，得到监视膜厚，并根据监视膜监视基板的研磨进度 厚度。

公开(公告)号：US20180229346A1

公开(公告)日：2018-08-16

申请号：US15949960

申请日：2018-04-10

申请人： EBARA CORPORATION

发明人： Itsuki KOBATA ,  Yoichi KOBAYASHI ,  Katsutoshi ONO ,  Masaki KINOSHITA ,  Toshifumi KIMBA

IPC分类号： B24B37/26 ,  H01L21/687 ,  H01L21/67 ,  B24B37/04 ,  B24B37/10 ,  B24B37/005 ,  H01L21/66 ,  H01L21/3105 ,  B24B49/12 ,  B24B37/013

CPC分类号： B24B37/26 ,  B24B37/005 ,  B24B37/013 ,  B24B37/04 ,  B24B37/042 ,  B24B37/10 ,  B24B37/205 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67253 ,  H01L21/68721 ,  H01L22/26

摘要： A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

公开(公告)号：US20150255357A1

公开(公告)日：2015-09-10

申请号：US14637282

申请日：2015-03-03

申请人： EBARA CORPORATION

发明人： Yoichi KOBAYASHI ,  Keita YAGI

IPC分类号： H01L21/66 ,  H01L21/67 ,  B24B49/12 ,  H01L21/306 ,  B24B37/005 ,  B24B49/10

CPC分类号： H01L22/26 ,  B24B37/005 ,  B24B49/105 ,  B24B49/12 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/67063 ,  H01L21/67092 ,  H01L21/67253 ,  H01L22/12

摘要： A polishing apparatus capable of achieving a good control operation for a distribution of remaining film thickness is disclosed. The polishing apparatus includes: a top ring configured to apply pressures separately to zones on a back surface of a substrate to press a front surface of the substrate against a polishing pad; a film-thickness sensor configured to obtain a film-thickness signal that varies in accordance with a film thickness of the substrate; and a polishing controller configured to manipulate the pressures. The polishing controller calculates indexes of a remaining film thickness in zones on the front surface of the substrate, manipulate the pressures based on the indexes for controlling a distribution of the remaining film thickness, and update at least one of control parameters using polishing data obtained during polishing of the substrate.

摘要翻译： 公开了一种能够实现良好的控制操作以用于分配剩余膜厚的抛光装置。 抛光装置包括：顶环，其构造成分别对基板的背面上的区域施加压力，以将基板的前表面压靠在抛光垫上; 薄膜厚度传感器，被配置为获得根据所述基板的膜厚而变化的膜厚度信号; 以及抛光控制器，被配置为操纵所述压力。 抛光控制器计算基板表面上的区域中的剩余膜厚度的指标，基于用于控制剩余膜厚度分布的指标来操作压力，并且使用在下文中获得的抛光数据来更新控制参数中的至少一个 抛光基材。

公开(公告)号：US20150111314A1

公开(公告)日：2015-04-23

申请号：US14589988

申请日：2015-01-05

申请人： EBARA CORPORATION

发明人： Takeshi IIZUMI ,  Katsuhide WATANABE ,  Yoichi KOBAYASHI

IPC分类号： H01L21/321 ,  B24B49/12 ,  H01L21/67 ,  B24B37/013 ,  H01L21/66 ,  H01L21/3105

CPC分类号： H01L21/3212 ,  B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  G01B7/105 ,  G01B11/0625 ,  G01B11/0683 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67253 ,  H01L21/76224 ,  H01L21/76819 ,  H01L21/7684 ,  H01L22/12 ,  H01L22/20

摘要： A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

摘要翻译： 提供了抛光具有膜的基板的方法。 该方法包括：对抛光部分中的基板进行抛光; 在清洗和干燥基板之前将抛光的基板运送到湿式膜厚测量装置; 通过湿式膜厚测量装置测量膜的厚度; 将厚度与预定目标值进行比较; 并且如果厚度未达到预定目标值，则在清洁和干燥基板之前对抛光部分中的基板进行再抛光。

公开(公告)号：US20140036266A1

公开(公告)日：2014-02-06

申请号：US14049304

申请日：2013-10-09

申请人： EBARA CORPORATION

发明人： Yoichi KOBAYASHI

IPC分类号： G01N21/95

CPC分类号： G01N21/9501 ,  B24B37/013 ,  B24B49/12 ,  G01B11/06 ,  H01L21/304

摘要： A method accurately monitors the progress of polishing and accurately detects the polishing end point. The method includes directing light to the substrate during polishing of the substrate, receiving reflected light from the substrate, measuring an intensity of the reflected light at each wavelength, and producing a spectrum indicating a relationship between intensity and wavelength from measured values of the intensity. The method also includes calculating an amount of change in the spectrum per predetermined time, integrating the amount of change in the spectrum with respect to polishing time to obtain an amount of cumulative change in the spectrum, and monitoring the progress of polishing of the substrate based on the amount of cumulative change in the spectrum.

摘要翻译： 一种方法精确地监测抛光的进度并精确地检测抛光终点。 该方法包括在抛光基板期间将光引向基板，接收来自基板的反射光，测量每个波长处的反射光的强度，并根据强度的测量值产生指示强度和波长之间的关系的光谱。 该方法还包括计算每预定时间的光谱变化量，将光谱中的变化量相对于抛光时间进行积分，以获得光谱的累积变化量，并监测基板的抛光进度 关于频谱累积变化的数量。

公开(公告)号：US20140017824A1

公开(公告)日：2014-01-16

申请号：US13938018

申请日：2013-07-09

申请人： EBARA CORPORATION

发明人： Takeshi IIZUMI ,  Katsuhide WATANABE ,  Yoichi KOBAYASHI

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  G01B7/105 ,  G01B11/0625 ,  G01B11/0683 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67253 ,  H01L21/76224 ,  H01L21/76819 ,  H01L21/7684 ,  H01L22/12 ,  H01L22/20

摘要： A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

摘要翻译： 提供了抛光具有膜的基板的方法。 该方法包括：对抛光部分中的基板进行抛光; 在清洗和干燥基板之前将抛光的基板运送到湿式膜厚测量装置; 通过湿式膜厚测量装置测量膜的厚度; 将厚度与预定目标值进行比较; 并且如果厚度未达到预定目标值，则在清洁和干燥基板之前对抛光部分中的基板进行再抛光。