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公开(公告)号：US5978666A
公开(公告)日：1999-11-02
申请号：US725962
申请日：1996-10-04
CPC分类号： H03F3/604 , H01L23/66 , H01L2223/6644 , H01L2224/16 , H01L2924/3011 , H03F2200/372
摘要： First and second slotlines are mounted on an electrically insulating substrate having a planar face with a connection region. Each slotline has first and second, spaced-apart coplanar conductors that extend into the connection region. A fifth, ground conductor, also mounted on the substrate face, is spaced from and coplanar with the first and second slotlines and has a proximal portion in the connection region. A chip circuit includes first and second field-effect transistors (FETs) flip mounted in the connection region to all five conductors. The gates of the FETs are connected to the first slotline for receiving an input signal. The drains are connected to the second slotline for outputting the signal amplified by the transistors. The sources of the FETs are connected to the fifth conductor. This general configuration can be modified for use as an amplifier, oscillator, frequency multiplier or mixer. The slotline may divide into parallel slotline portions for providing plural circuits in parallel with distributed impedance matching. A slotline may loop back from the connection region to provide a choice for impedance matching, and a portion of the fifth conductor may extend between slotline conductors to provide capacitive coupling.
摘要翻译： 第一和第二槽线安装在具有连接区域的具有平面的电绝缘基板上。 每个槽线具有延伸到连接区域中的第一和第二间隔开的共面导体。 也安装在基板表面上的第五个接地导体与第一和第二槽槽间隔开并且与第一和第二槽槽线共面并且在连接区域中具有近端部分。 芯片电路包括第一和第二场效应晶体管（FET），其在与所有五个导体的连接区域中翻转安装。 FET的栅极连接到第一时隙线以接收输入信号。 漏极连接到第二槽线，用于输出由晶体管放大的信号。 FET的源极连接到第五导体。 该通用配置可以被修改为用作放大器，振荡器，倍频器或混频器。 时隙线可以划分成并行的时隙线部分，用于与分布式阻抗匹配并行提供多个电路。 缝线可以从连接区域回环以提供阻抗匹配的选择，并且第五导体的一部分可以在缝线导体之间延伸以提供电容耦合。
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公开(公告)号：US6094114A
公开(公告)日：2000-07-25
申请号：US136431
申请日：1998-08-18
CPC分类号： H03F3/604 , H01L23/66 , H01L2223/6644 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/01079 , H01L2924/3011 , H01L2924/3025
摘要： A high frequency circuit structure including a base substrate having a planar face, a first base slotline mounted on the base substrate face and consisting of first and second, spaced-apart coplanar base conductors, and a circuit chip flip-mounted on the base substrate. The circuit chip include a chip substrate having a planar face facing the planar face of the base substrate. A slotline resident on the chip is flip mounted onto the base slotline. Input and output connections made according to the invention can be used to provide connections to an intermediate circuit resident on either the chip or the base substrate. A second chip slotline may be electrically in series or parallel with the first chip slotline.
摘要翻译： 一种高频电路结构，包括具有平面的基底基板，安装在基底基板面上的第一基座槽线，由第一和第二间隔开的共面基底导体组成，以及一个倒装安装在基底基板上的电路芯片。 电路芯片包括具有面向基底基板的平面的平面的芯片基板。 芯片上驻留的槽线被翻转安装到基座槽上。 根据本发明制造的输入和输出连接可用于提供与驻留在芯片或基底基板上的中间电路的连接。 第二芯片槽线可以与第一芯片槽线串联或并联。
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公开(公告)号：US5832376A
公开(公告)日：1998-11-03
申请号：US679259
申请日：1996-07-12
CPC分类号： H03D7/18 , H03D9/0633 , H01L2224/16 , H01L2224/48011 , H01L2224/48091 , H01L2924/01079 , H01L2924/12032 , H01L2924/30107 , H01L2924/3011
摘要： Mixers assemblies including mixer cells, baluns, quadrature mixers and image reject mixers, etc. The mixer cell may contain CPW strip RF input and slot line strip LO input. LO signal return is provided through a flip-chip mounted to a mixer contact area and the CPW RF input is preferably coupled to the contact area through a distributed or flip-chip mounted capacitor. The use of two mixer cells in novel embodiments of quadrature and image reject mixers is disclosed. CPW to slot line power dividing baluns for use within and without such mixers are also disclosed.
摘要翻译： 混频器组件包括混频器单元，平衡 - 不平衡变压器，正交混频器和图像抑制混频器等。混频器单元可以包含CPW条RF输入和时隙线条LO输入。 LO信号返回通过安装到混频器接触区域的倒装芯片提供，并且CPW RF输入优选地通过分布式或倒装芯片安装的电容器耦合到接触区域。 公开了在正交和图像拒绝混合器的新颖实施例中使用两个混合器单元。 还公开了在这种混合器内和没有这种混合器的情况下使用CPW到插槽线分配的不平衡变换器。
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14.发明授权Method of making a hybrid circuit with a chip having active devices with extra-chip interconnections 失效制造具有带芯片互连的有源器件的芯片的混合电路的方法
公开(公告)号：US5698469A
公开(公告)日：1997-12-16
申请号：US400025
申请日：1995-03-06
CPC分类号： H03F3/604 , H01L23/66 , H01L2223/6644 , H01L2224/16 , H01L2924/1305 , H01L2924/3011 , H03F2200/372 , Y10S438/98
摘要： A process of connecting a plurality of essentially identical active devices is presented for the purpose of multifunction and multiple function operation. These devices, mounted on a chip, are flip-mounted to a circuit motherboard having large passive elements. A push-pull amplifier is presented as an example in which the multiple function operation is the combining of amplifiers whose active devices are on a single chip. The electromagnetic coupling, impedance matching and signal transmission are variously provided by the use of striplines, slotlines, coplanar waveguides, and a slotline converted into a coplanar waveguide.
摘要翻译： 提出了连接多个基本相同的有源器件的过程，用于多功能和多功能操作。 安装在芯片上的这些器件被翻转安装到具有大的无源元件的电路母板上。 以推挽放大器为例，其中多功能操作是其有源器件在单个芯片上的放大器的组合。 电磁耦合，阻抗匹配和信号传输通过使用带状线，缝合线，共面波导和转换成共面波导的槽线不同地提供。
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公开(公告)号：US5563558A
公开(公告)日：1996-10-08
申请号：US505789
申请日：1995-07-21
CPC分类号： H01P5/16
摘要： An asymmetric reentrant power coupler suitable for microwave and millimeter bands that includes k input terminals, a plurality of m output terminals, where m is greater than k, and a network coupling the k input terminals to the m output terminals, the network defining n signal paths, where n is greater that m. An input coupler divides an input signal into at least two signal paths. An output coupler recombines a fraction less than one of the divided input signal for propagation to an output terminal. A portion of the non-recombined input signal is propagated to another output terminal. The reentrant coupler may be implemented using Wilkinson, ring, branched line or other coupler types. Couplers that are generally planar as well as coupler that are non-planar are presented.
摘要翻译： 适用于微波和毫米波段的非对称可重入功率耦合器，其包括k个输入端子，m个大于k的多个m个输出端子以及将k个输入端子耦合到m个输出端子的网络，网络限定n个信号 路径，其中n大于m。 输入耦合器将输入信号划分成至少两个信号路径。 输出耦合器将小于一个分频输入信号的分数重新组合以传播到输出端。 非重组输入信号的一部分传播到另一个输出端。 可以使用Wilkinson，环，分支线或其他耦合器类型来实现可折入耦合器。 提出了一般为平面的耦合器以及非平面的耦合器。
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公开(公告)号：US06265937B1
公开(公告)日：2001-07-24
申请号：US09323438
申请日：1999-06-01
IPC分类号： H03F326
CPC分类号： H03F3/3044 , H01L23/66 , H01L2223/6627 , H01L2223/6644 , H01L2924/0002 , H01P5/10 , H03F3/604 , H01L2924/00
摘要： A means of connecting a plurality of essentially identical active devices is presented for the purpose of multifunction and multiple function operation. These devices, mounted on a chip, are flip-mounted onto a circuit formed on a base substrate and having large passive elements. Push-pull amplifiers are presented as examples in which the multiple function operation is the combining of amplifiers whose active devices are on a single chip. Electromagnetic coupling, impedance matching and signal transmission are variously provided by the use of strip lines, slotlines, coplanar waveguides, and a slotline converted into a coplanar waveguide.
摘要翻译： 为了多功能和多功能操作的目的，提出了连接多个基本相同的有源设备的手段。 安装在芯片上的这些装置被翻转安装在形成在基底基板上的电路上并且具有大的无源元件。 推挽放大器作为示例，其中多功能操作是其有源器件在单个芯片上的放大器的组合。 电磁耦合，阻抗匹配和信号传输通过使用带状线，缝线，共面波导和转换成共面波导的槽线而各不相同。
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公开(公告)号：US5942804A
公开(公告)日：1999-08-24
申请号：US697927
申请日：1996-09-03
CPC分类号： H03F3/604 , H01L23/66 , H01L2223/6644 , H01L2224/16 , H01L2924/1305 , H01L2924/3011 , H03F2200/372 , Y10S438/98
摘要： A means of connecting a plurality of essentially identical active devices is presented for the purpose of multifunction and multiple function operation. These devices, mounted on a chip, are flip-mounted to a circuit motherboard having large passive elements. A push-pull amplifier is presented as an example in which the multiple function operation is the combining of amplifiers whose active devices are on a single chip. The electromagnetic coupling, impedance matching and signal transmission are variously provided by the use of striplines, slotlines, coplanar waveguides, and a slotline converted into a coplanar waveguide.
摘要翻译： 为了多功能和多功能操作的目的，提出了连接多个基本相同的有源设备的手段。 安装在芯片上的这些器件被翻转安装到具有大的无源元件的电路母板上。 以推挽放大器为例，其中多功能操作是其有源器件在单个芯片上的放大器的组合。 电磁耦合，阻抗匹配和信号传输通过使用带状线，缝合线，共面波导和转换成共面波导的槽线不同地提供。
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公开(公告)号：US06600384B2
公开(公告)日：2003-07-29
申请号：US09861063
申请日：2001-05-18
IPC分类号： H01P124
CPC分类号： H01P1/24
摘要： A via termination for a microstrip transmission line formed on a substrate includes a termination resistor that connects an end of the signal conductor to a backside ground plane through a via. Two open-circuit stubs are also formed on the first face of the substrate, one stub on each side of the termination resistor. A compensation resistor on the first face of the substrate connects the end of the signal conductor to each open-circuit stub. The load resistor is equal to the characteristic impedance of the transmission line and the compensation resistors are each equal to twice the characteristic impedance. The combined termination ideally exhibits a real impedance equal to the characteristic impedance over a wide frequency range.
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公开(公告)号：US06064253A
公开(公告)日：2000-05-16
申请号：US63425
申请日：1998-04-20
CPC分类号： H03F3/604
摘要： First and second spaced-apart planar circuit ground conductors are formed on a base substrate. Multiple stages of an amplifier each have a field effect transistor (FET) flip mounted onto the substrate. A signal-return line couples the sources of the FETs together and functions as a radio frequency (RF) grounds for the amplifier. Direct-current-blocking coplanar couplers couple the amplifier input and output to external circuits. A single voltage supply applies a bias voltage to the drains of the FETs. A source resistance device couples each source terminal to circuit ground. The source resistance devices may be formed of two series-connected resistors. The gate of each FET is coupled to one of the circuit ground conductors through one of the source resistors. The other source resistor thereby provides a gate-to-source voltage for biasing the FET. Alternative embodiments provide a community bias circuit in which signal-return lines of transistors conducting different signals are interconnected and coupled to the bias circuit ground.
摘要翻译： 第一和第二间隔开的平面电路接地导体形成在基底基板上。 放大器的多级各自具有翻转安装在衬底上的场效应晶体管（FET）。 信号返回线将FET的源极耦合在一起，并用作放大器的射频（RF）接地。 直流阻塞共面耦合器将放大器输入和输出耦合到外部电路。 单个电压源对FET的漏极施加偏置电压。 源极电阻器件将每个源极端子耦合到电路接地。 源极电阻器件可以由两个串联连接的电阻器形成。 每个FET的栅极通过一个源极电阻耦合到一个电路接地导体。 因此，另一个源极电阻器提供用于偏置FET的栅极至源极电压。 替代实施例提供了一种社区偏置电路，其中传导不同信号的晶体管的信号返回线互连并耦合到偏置电路接地。
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公开(公告)号：US5821827A
公开(公告)日：1998-10-13
申请号：US769144
申请日：1996-12-18
CPC分类号： H03B5/1852
摘要： An oscillator circuit having a flip chip metalization pattern and base substrate metalization pattern is defined such that a common-drain oscillator is configured with the common drain interposed between the source and gate terminals, providing an effective RF common reference with reduced parasitic inductance elements which otherwise degrade oscillator power and phase noise at high frequencies. Multiple sets of such patterns on the substrate and such three-terminal devices on the flip chip are arranged such that conductor patterns on the substrate connecting separately from the gates and the sources of the multiple devices to the common-drain reference are easily configured into separable tuning (or resonator) and feedback circuits. A common-drain oscillator having an interdigitated capacitor coplanar cavity resonator circuit as the gate input circuit having reduced distributed inductance is realized utilizing the interposed common-drain connections provided thereby. Having many small devices, such as FETs, coupled closely together (each having very low parasitic and therefore very high potential operating frequency), the signal power of each adds arithmetically but the noise power adds statistically thereby achieving lower phase noise relative to the combined oscillator signal power. Circuit structures utilizing this invention can provide very large oscillator arrays providing a reduction in phase noise relative to the oscillation signal without having the usual device size limitations.
摘要翻译： 定义了具有倒装芯片金属化图案和基底金属化图案的振荡器电路，使得公共漏极振荡器配置有插入在源极和栅极端子之间的公共漏极，从而提供有效的RF公共参考，其中减少的寄生电感元件 在高频下降低振荡器功率和相位噪声。 衬底上的多组这样的图案和倒装芯片上的这样的三端器件被布置成使得与栅极和多个器件的源极分开连接到衬底的衬底上的导体图案容易地配置成可分离 调谐（或谐振器）和反馈电路。 使用由此提供的插入式共漏极连接，实现了具有分叉电容器共面空腔谐振器电路的共漏极振荡器作为具有降低的分布电感的栅极输入电路。 具有诸如FET的许多小器件（每个具有非常低的寄生因素，因此具有非常低的寄生电位，因此具有非常高的潜在工作频率），每个信号功率都是算术的，但是噪声功率统计地增加，从而相对于组合振荡器实现较低的相位噪声 信号功率 利用本发明的电路结构可以提供非常大的振荡器阵列，其提供相对于振荡信号的相位噪声的降低，而不需要通常的器件尺寸限制。
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