公开(公告)号：US20230030323A1

公开(公告)日：2023-02-02

申请号：US17949956

申请日：2022-09-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US11492709B2

公开(公告)日：2022-11-08

申请号：US17230633

申请日：2021-04-14

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Emanuel I. Cooper ,  Eric Hong ,  JeongYeol Yang ,  Juhee Yeo ,  Michael L. White ,  SeongJin Hong ,  SeungHyun Chae ,  Steven A. Lippy ,  WonLae Kim

IPC: C23F1/38 ,  H01L21/3213

Abstract: An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 Å/min.

公开(公告)号：US11053440B2

公开(公告)日：2021-07-06

申请号：US16681449

申请日：2019-11-12

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  SeongJin Hong ,  Hsing-Chen Wu ,  Min-Chieh Yang ,  Emanuel I. Cooper

IPC: C09K13/06 ,  H01L21/311

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.