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公开(公告)号：US20240011652A1
公开(公告)日：2024-01-11
申请号：US18469657
申请日：2023-09-19
Applicant: FUJIFILM Corporation
Inventor： Shinya HAKUTA , Shogo YAMAZOE , Yoshihiro SUGAWARA , Yuichiro ITAI
Abstract: To effectively reduce a low-frequency noise resulting from vibration of a peripheral wall of a ventilation path.
The present invention provides a ventilation path with a soundproof structure including a ventilation path that includes an open end and a soundproof structure against a sound emitted from the ventilation path. The soundproof structure includes a vibration suppression portion that is provided on a surface of a peripheral wall surrounding the ventilation path, and assuming that m and n are natural numbers of 4 or less, λ is a wavelength of a sound of which a frequency coincides with an m-th natural frequency of the peripheral wall alone, and L1 is a distance from the open end on a virtual line extending through a central position of a cross section of each portion of the ventilation path, the cross section intersecting a direction in which the ventilation path extends, the vibration suppression portion is present in an area at which a distance L1 is equal to or greater than (4n−3)/×λ/8 and equal to or smaller than (4n−1)×λ/8.-
公开(公告)号：US20200348451A1
公开(公告)日：2020-11-05
申请号：US16929100
申请日：2020-07-14
Applicant: FUJIFILM CORPORATION
Inventor： Kenichi UMEDA , Seigo NAKAMURA , Tatsuya YOSHIHIRO , Yuichiro ITAI
Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.
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公开(公告)号：US20200209436A1
公开(公告)日：2020-07-02
申请号：US16813703
申请日：2020-03-09
Applicant: FUJIFILM Corporation
Inventor： Seigo NAKAMURA , Tatsuya YOSHIHIRO , Kenichi UMEDA , Yuichiro ITAI
Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.
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公开(公告)号：US20180331289A1
公开(公告)日：2018-11-15
申请号：US16041766
申请日：2018-07-21
Applicant: FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
Inventor： Seigo NAKAMURA , Yoshiki MAEHARA , Yuichiro ITAI , Yoshihisa USAMI , Junichi TAKEYA
CPC classification number: H01L51/0003 , B05C11/045 , H01L29/786 , H01L51/05 , H01L51/0512 , H01L51/105
Abstract: A method of manufacturing an organic semiconductor film, including a step of moving a coating blade surface positioned to face a substrate surface in a first direction parallel to the substrate surface, while in contact with an organic semiconductor solution supplied to a portion between the blade surface and the substrate surface to form the organic semiconductor film in the first direction. The coating blade is disposed to have first and second gaps having different separation gap sizes with the substrate surface in a region where the blade surface and the organic semiconductor solution are in contact. The first gap is positioned on an upstream side of the first direction and the second gap, which is smaller than the first gap, is provided on a downstream side. A second gap size is a minimum distance between the substrate surface and the blade surface and is 40 μm or less.
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公开(公告)号：US20180326447A1
公开(公告)日：2018-11-15
申请号：US16041769
申请日：2018-07-21
Applicant: FUJIFILM Corporation , THE UNIVERSITY OF TOKYO
Inventor： Seigo NAKAMURA , Yoshiki MAEHARA , Yuichiro ITAI , Yoshihisa USAMI , Junichi TAKEYA
Abstract: A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.
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Patent Agency Ranking
公开(公告)号：US20240280290A1
公开(公告)日：2024-08-22
申请号：US18626454
申请日：2024-04-04
Applicant: FUJIFILM Corporation
Inventor： Shinya HAKUTA , Shogo YAMAZOE , Yoshihiro SUGAWARA , Yuichiro ITAI
Abstract: Provided is an air passage type silencer that can reduce pressure loss even in a case where the flow rate of a gas flowing in the air passage type silencer is high. An air passage type silencer includes an inlet-side ventilation pipe, an expansion portion that communicates with the inlet-side ventilation pipe and of which a cross-sectional area is larger than a cross-sectional area of the inlet-side ventilation pipe, and an outlet-side ventilation pipe that communicates with the expansion portion and of which a cross-sectional area is smaller than the cross-sectional area of the expansion portion. A level difference d satisfies Equation (1): d≥100 μm, satisfies Equation (2): d≤25×Sa+193 μm in a case where an arithmetic average height Sa is equal to or smaller than 50 μm, and satisfies Equation (3): d≤1450 μm in a case where the arithmetic average height Sa exceeds 50 μm, where Sa (μm) is an arithmetic average height of a surface on a central side in the expansion portion and d (μm) is an average value of level differences between a ventilation pipe interior wall and the surface on the central side at at least one of a connection portion between the expansion portion and the inlet-side ventilation pipe or a connection portion between the expansion portion and the outlet-side ventilation pipe.
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公开(公告)号：US20240255176A1
公开(公告)日：2024-08-01
申请号：US18631467
申请日：2024-04-10
Applicant: FUJIFILM Corporation
Inventor： Shogo YAMAZOE , Yuichiro ITAI , Shinya HAKUTA , Yoshihiro SUGAWARA , Tomohiro TAKAHASHI
IPC: F24F13/24
CPC classification number: F24F13/24 , F24F2013/242
Abstract: An object is to provide a ventilation system that can suppress generation of a pressure loss and wind noise in a silencer.
The ventilation system of the present invention has the silencer disposed at an intermediate position of a ventilation path. In a housing of the silencer, an in-housing ventilation path extending from an inlet opening to an outlet opening is surrounded by a sound absorbing member. The ventilation path has a first ventilation path that is adjacent to the inlet opening and that is continuous to the in-housing ventilation path and a second ventilation path that is adjacent to the outlet opening and that is continuous to the in-housing ventilation path. The farther from the in-housing ventilation path, the smaller a size of a cross section of at least one ventilation path of the first ventilation path or the second ventilation path. A size of a cross section of an end of at least one of the ventilation paths on an in-housing ventilation path side and a size of an opening of the inlet opening or the outlet opening, which is adjacent to the end, are identical to each other.-
公开(公告)号：US20240003275A1
公开(公告)日：2024-01-04
申请号：US18469270
申请日：2023-09-18
Applicant: FUJIFILM Corporation
Inventor： Shinya HAKUTA , Shogo YAMAZOE , Yoshihiro SUGAWARA , Yuichiro ITAI
IPC: F01N1/04
CPC classification number: F01N1/04 , F01N2490/16 , F01N2490/18
Abstract: To provide an air passage type silencer and an acoustic impedance change structure of which the absorbance is high, that suppresses generation of a wind noise, and that has a high sound attenuation effect in a low-frequency band. Provided is an acoustic impedance change structure through which a sound propagates, the acoustic impedance change structure including at least in this order: a first impedance matching region that is connected to an inlet portion and in which an acoustic impedance gradually decreases; an acoustic impedance constancy region; and an outlet portion, in which Zcham
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公开(公告)号：US20200209433A1
公开(公告)日：2020-07-02
申请号：US16799782
申请日：2020-02-24
Applicant: FUJIFILM Corporation
Inventor： Kenichi UMEDA , Yuichiro ITAI , Seigo NAKAMURA
Abstract: In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3×10−20 J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.
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20.发明申请公开(公告)号：US20200033508A1
公开(公告)日：2020-01-30
申请号：US16580811
申请日：2019-09-24
Applicant: FUJIFILM Corporation
Inventor： Shinichiro SONODA , Tatsuya YOSHIHIRO , Kenichi UMEDA , Yuichiro ITAI , Seigo Nakamura
Abstract: An optical thin film formed by laminating, from the substrate side, an interlayer, a silver-containing metal layer that contains silver, and a dielectric layer, in which an anchor metal diffusion control layer provided between the interlayer and the silver-containing metal layer, an anchor region which includes an oxide of the anchor metal and has a surface energy that is less than the surface energy of the silver-containing metal layer and larger than the surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, a cap region which includes an oxide of the anchor metal is provided between the silver-containing metal layer and the dielectric layer, and the total film thickness of the silver-containing metal layer, the anchor region, and the cap region is 6 nm or less.
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