Abstract:
The present invention is to provide a photoelectric conversion element having an excellent photoelectric conversion efficiency and responsiveness after heating over time. In addition, the present invention is to provide an imaging element, an optical sensor, a material for a photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and an n-type semiconductor material.
Abstract:
An object of the present invention is to provide a photoelectric conversion element that exhibits stable performance even though a compositional ratio of a photoelectric conversion film fluctuates in a case of manufacturing the photoelectric conversion film by vapor deposition. In addition, an imaging element, an optical sensor, and a material for a photoelectric conversion element are provided. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) and an n-type semiconductor material.
Abstract:
The present invention provides a photoelectric conversion element having excellent heat resistance. In addition, the present invention provides an optical sensor and an imaging element including the photoelectric conversion element. In addition, the present invention provides a compound applied to the photoelectric conversion element. The photoelectric conversion element according to the embodiment of the present invention including a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1) or (2).
Abstract:
The present invention provides a photoelectric conversion element exhibiting excellent responsiveness, and excellent dark current characteristics in a case of high-speed photoelectric conversion film formation, an optical sensor, an imaging element, and a compound which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1), and an n-type organic semiconductor having a predetermined structure.
Abstract:
An object of the present invention is to provide a kit and a method capable of achieving high-precision measurement of a measurement target substance in a biological sample in a wide concentration range from a low concentration to a high concentration by sufficiently avoiding the influence of antibodies such as anti-serum albumin antibody present in blood. According to the present invention, there is provided a kit for measuring a measurement target substance in a biological sample, the kit including: a labeled particle having a first binding substance capable of binding to the measurement target substance and having a first blocking agent; and a substrate having a second binding substance capable of binding to any one of the measurement target substance or the first binding substance and having a second blocking agent, in which the labeled particle is a luminescent labeled particle containing at least one kind of compound represented by Formula (1) and a particle, and the first blocking agent and the second blocking agent are different from each other. Each symbol in Formula (1) has the meaning described in the present specification.
Abstract:
The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).
Abstract:
The present invention provides a photoelectric conversion element exhibiting excellent low dark current characteristics and heat resistance, an imaging element and an optical sensor which include the photoelectric conversion element, and a compound. The photoelectric conversion element of the present invention is a photoelectric conversion element photoelectric conversion element having a conductive film, a photoelectric conversion film, and a transparent conductive film in this order, in which the photoelectric conversion film contains a compound represented by General Formula (1) and an organic n-type compound.
Abstract:
A photoelectric conversion element having an electrically conductive support, a photoconductor layer including an electrolyte, a charge transfer layer including an electrolyte, and a counter electrode, in which the photoconductor layer has semiconductor fine particles carrying a metal complex dye represented by the following Formula (1), and a dye-sensitized solar cell; and a metal complex dye, a dye solution, and a terpyridine compound, or an esterified product thereof, each of which is used in the photoelectric conversion element and the dye-sensitized solar cell, ML1L2(X)n1.CImY Formula (1) in Formula (1), M represents a metal ion, L1 represents a tridentate ligand having a group L represented by the following Formula (LV-1) or (LV-2); L2 represents a bidentate or tridentate ligand which coordinates to M with an anion, in which a ring including a ring-constituting nitrogen atom which coordinates to M with an lone electron pair has an organic group RVL: -(RVL)nVL; X represents a monodentate ligand; n1 represents 0 or 1; CI represents a required counterion; and mY represents an integer of 0 to 3, -RV1=RV2-RV3 Formula (LV-1) —C≡C—RV3 Formula (LV-2) in the formulae, RV1 and RV2 each independently represent a nitrogen atom or CRV4, RV4 represents a hydrogen atom or a substituent, and RV3 represents an aryl group or a heteroaryl group; RVL represents a specific aromatic ring group or the like; and nVL represents an integer of 0 or more.
Abstract:
An object of the present invention is to provide a photoelectric conversion element having a photoelectric conversion film which exhibits heat resistance, a high photoelectric conversion efficiency, a low level of dark currents, rapid response, and sensitivity characteristics to red and can be produced by a vapor deposition processing that is continuously performed under a high-temperature condition. The photoelectric conversion element of the present invention is a photoelectric conversion element in which a conductive film, a photoelectric conversion film containing a photoelectric conversion material, and a transparent conductive film are laminated on one another in this order, wherein the photoelectric conversion material includes a compound represented by Formula (1).
Abstract:
The present invention provides a barrier laminate with enhanced heat resistance performance, comprising at least one organic layer and at least one inorganic barrier layer, the organic layer being formed by curing a polymerizable composition comprising a polymerizable compound having two or more polymerizable groups, and the total quantity of uncured component in the organic layer being 1.5 weight % or less of the total weight of the organic layer, and a novel polymerizable compound that can preferably used as the polymerizable compound, which is denoted by general formula (11): in general formula (11), R21 denotes hydrogen atom or methyl group; R22 denotes methyl group or cyclohexyl group; n denotes an integer of 0 to 2; and each instance of X denotes a group comprising a polymerizable group.