公开(公告)号：US07593286B2

公开(公告)日：2009-09-22

申请号：US12047756

申请日：2008-03-13

申请人： James Brian Johnson ,  Feng Lin ,  Brent Keeth

发明人： James Brian Johnson ,  Feng Lin ,  Brent Keeth

IPC分类号： G11C8/00

CPC分类号： G11C29/50 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C7/22 ,  G11C7/222 ,  G11C11/401 ,  G11C11/4076 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50012

摘要： A method and circuitry for improved write latency tracking in a SDRAM is disclosed. In one embodiment, a delay locked loop is used in the command portion of the write path, and receives the system clock as its reference input. The DLL includes a modeled delay which models the delay in transmission of the internal Write Valid signal and system clock distribution to the deserializers in the data path portion of the write path, which is otherwise controlled by the intermittently asserted write strobe signal. With the input distribution delay of the system clock (Clk) and the write strobe (WS) matched by design, the distributed system clock and Write Valid signal are synchronized to the WS distribution path by means of the DLL delay with reference to the system clock input to the DLL. By backing the distribution delay out of system clock as sent to the deserializers, the write valid signal is effectively synchronized with the write strobe, with the effect that data will be passed out of the deserializer circuitry to the memory array on time and consistent with the programmed write latency.

摘要翻译： 公开了一种用于在SDRAM中改进写延迟跟踪的方法和电路。 在一个实施例中，在写入路径的命令部分中使用延迟锁定环，并且接收系统时钟作为其参考输入。 DLL包括建模延迟，其将内部写入有效信号的传输延迟和系统时钟分布建模到写入路径的数据路径部分中的解串行器，否则由间歇性断言的写入选通信号控制。 随着系统时钟（Clk）的输入分配延迟和设计匹配的写选通（WS），分布式系统时钟和写有效信号通过参考系统时钟的DLL延迟与WS分配路径同步 输入到DLL。 通过将分发延迟从发送到解串器的系统时钟中提取出来，写入有效信号与写入选通有效地同步，其影响是数据将及时从解串器电路传送到存储器阵列，并与 编程写延迟。

公开(公告)号：US20080159058A1

公开(公告)日：2008-07-03

申请号：US12047756

申请日：2008-03-13

申请人： James Brian Johnson ,  Feng Lin ,  Brent Keeth

发明人： James Brian Johnson ,  Feng Lin ,  Brent Keeth

IPC分类号： G11C8/18

CPC分类号： G11C29/50 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C7/22 ,  G11C7/222 ,  G11C11/401 ,  G11C11/4076 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50012

摘要： A method and circuitry for improved write latency tracking in a SDRAM is disclosed. In one embodiment, a delay locked loop is used in the command portion of the write path, and receives the system clock as its reference input. The DLL includes a modeled delay which models the delay in transmission of the internal Write Valid signal and system clock distribution to the deserializers in the data path portion of the write path, which is otherwise controlled by the intermittently asserted write strobe signal. With the input distribution delay of the system clock (Clk) and the write strobe (WS) matched by design, the distributed system clock and Write Valid signal are synchronized to the WS distribution path by means of the DLL delay with reference to the system clock input to the DLL. By backing the distribution delay out of system clock as sent to the deserializers, the write valid signal is effectively synchronized with the write strobe, with the effect that data will be passed out of the deserializer circuitry to the memory array on time and consistent with the programmed write latency.

摘要翻译： 公开了一种用于在SDRAM中改进写延迟跟踪的方法和电路。 在一个实施例中，在写入路径的命令部分中使用延迟锁定环，并且接收系统时钟作为其参考输入。 DLL包括建模延迟，其将内部写入有效信号的传输延迟和系统时钟分布建模到写入路径的数据路径部分中的解串行器，否则由间歇性断言的写入选通信号控制。 随着系统时钟（Clk）的输入分配延迟和设计匹配的写选通（WS），分布式系统时钟和写有效信号通过参考系统时钟的DLL延迟与WS分配路径同步 输入到DLL。 通过将分发延迟从发送到解串器的系统时钟中提取出来，写入有效信号与写入选通有效地同步，其影响是数据将及时从解串器电路传送到存储器阵列，并与 编程写延迟。

公开(公告)号：US07355920B2

公开(公告)日：2008-04-08

申请号：US11355802

申请日：2006-02-16

申请人： James Brian Johnson ,  Feng Lin ,  Brent Keeth

发明人： James Brian Johnson ,  Feng Lin ,  Brent Keeth

IPC分类号： G11C8/00

CPC分类号： G11C29/50 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1093 ,  G11C7/22 ,  G11C7/222 ,  G11C11/401 ,  G11C11/4076 ,  G11C11/4096 ,  G11C29/02 ,  G11C29/023 ,  G11C29/028 ,  G11C29/50012

摘要： A method and circuitry for improved write latency tracking in a SDRAM is disclosed. In one embodiment, a delay locked loop is used in the command portion of the write path, and receives the system clock as its reference input. The DLL includes a modeled delay which models the delay in transmission of the internal Write Valid signal and system clock distribution to the deserializers in the data path portion of the write path, which is otherwise controlled by the intermittently asserted write strobe signal. With the input distribution delay of the system clock (Clk) and the write strobe (WS) matched by design, the distributed system clock and Write Valid signal are synchronized to the WS distribution path by means of the DLL delay with reference to the system clock input to the DLL. By backing the distribution delay out of system clock as sent to the deserializers, the write valid signal is effectively synchronized with the write strobe, with the effect that data will be passed out of the deserializer circuitry to the memory array on time and consistent with the programmed write latency.

摘要翻译： 公开了一种用于在SDRAM中改进写延迟跟踪的方法和电路。 在一个实施例中，在写入路径的命令部分中使用延迟锁定环，并且接收系统时钟作为其参考输入。 DLL包括建模延迟，其将内部写入有效信号的传输延迟和系统时钟分布建模到写入路径的数据路径部分中的解串行器，否则由间歇性断言的写入选通信号控制。 随着系统时钟（Clk）的输入分配延迟和设计匹配的写选通（WS），分布式系统时钟和写有效信号通过参考系统时钟的DLL延迟与WS分配路径同步 输入到DLL。 通过将分发延迟从发送到解串器的系统时钟中提取出来，写入有效信号与写入选通有效地同步，其影响是数据将及时从解串器电路传送到存储器阵列，并与 编程写延迟。

公开(公告)号：US07251194B2

公开(公告)日：2007-07-31

申请号：US11352078

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C8/18

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

摘要翻译： 存储器系统将命令，地址或写入数据信号从存储器控制器耦合到存储器件，并将数据信号从存储器件读取到存储器控制器。 每个存储器控制器和存储器件中的相应选通发生器电路都产生同相选通信号和正交选通信号。 存储在存储器控制器中的相应输出锁存器中的命令，地址或写入数据信号由来自内部选通发生器电路的同相信号计时。 这些命令，地址或写入数据信号通过从存储器控制器耦合到存储器件的正交选通信号而被锁存在存储器件中的输入锁存器中。 以基本相同的方式，使用由内部选通发生器电路产生的同相和正交选通信号，将读取的数据信号从存储器件耦合到存储器控制器。

公开(公告)号：US07126874B2

公开(公告)日：2006-10-24

申请号：US10931472

申请日：2004-08-31

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C8/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

摘要翻译： 存储器系统将命令，地址或写入数据信号从存储器控制器耦合到存储器件，并将数据信号从存储器件读取到存储器控制器。 每个存储器控制器和存储器件中的相应选通发生器电路都产生同相选通信号和正交选通信号。 存储在存储器控制器中的相应输出锁存器中的命令，地址或写入数据信号由来自内部选通发生器电路的同相信号计时。 这些命令，地址或写入数据信号通过从存储器控制器耦合到存储器件的正交选通信号而被锁存在存储器件中的输入锁存器中。 以基本相同的方式，使用由内部选通发生器电路产生的同相和正交选通信号，将读取的数据信号从存储器件耦合到存储器控制器。

公开(公告)号：US20060140023A1

公开(公告)日：2006-06-29

申请号：US11352078

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C7/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

公开(公告)号：US20060133165A1

公开(公告)日：2006-06-22

申请号：US11351836

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C7/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

公开(公告)号：US07187617B2

公开(公告)日：2007-03-06

申请号：US11351836

申请日：2006-02-10

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson ,  Seong-hoon Lee

IPC分类号： G11C8/00

CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/22 ,  G11C7/222

摘要： A memory system couples command, address or write data signals from a memory controller to a memory device and read data signals from the memory device to the memory controller. A respective strobe generator circuit in each of the memory controller and the memory device each generates an in-phase strobe signal and a quadrature strobe signal. Command, address or write data signals stored in respective output latches in the memory controller are clocked by the in-phase signals from the internal strobe generator circuit. These command, address or write data signals are latched into input latches in the memory device by the quadrature strobe signal coupled from the memory controller to the memory device. In substantially the same manner, read data signals are coupled from the memory device to the memory controller using the in-phase and quadrature strobe signals generated by the internal strobe generator circuit.

公开(公告)号：US06836166B2

公开(公告)日：2004-12-28

申请号：US10339752

申请日：2003-01-08

申请人： Feng Lin ,  Brent Keeth ,  Brian Johnson

发明人： Feng Lin ,  Brent Keeth ,  Brian Johnson

IPC分类号： H03L706

CPC分类号： G11C7/222 ,  G11C7/1072 ,  H03L7/0814 ,  H03L7/0818 ,  H03L7/087

摘要： A synchronization circuit includes a first and second phase-shifting path circuit, with each generates a phase-shifted signal responsive to an input signal and the phase-shifted signal having respective fine and coarse phase shifts relative to the input signal. Each phase-shifting path circuit adjusts the coarse and fine phase shifts responsive to control signals. A selection circuit outputs one of the phase-shifted signals responsive to a selection signal. A control circuit monitors a phase shift between the input signal and the output phase-shifted signal and develops the selection and control signals to select one of the phase-shifting path circuits and to adjust the fine phase shift of the selected path circuit and the fine and coarse phase shifts of the other path circuit. When the fine delay of the selected phase-shifting path circuit has a threshold value, the control circuit develops the selection signal to select the other phase-shifting circuit.

摘要翻译： 同步电路包括第一和第二移相路径电路，每个产生响应于输入信号的相移信号，并且相移信号相对于输入信号具有相应的精细和粗略的相移。 每个移相路径电路响应于控制信号调整粗略和精细的相移。 选择电路响应于选择信号输出一个相移信号。 控制电路监视输入信号和输出相移信号之间的相移，并产生选择和控制信号以选择一个相移路径电路并调整所选路径电路的精细相移和精细 和另一路径电路的粗相移。 当所选择的移相路径电路的精细延迟具有阈值时，控制电路产生选择信号以选择另一个移相电路。

公开(公告)号：US07336111B2

公开(公告)日：2008-02-26

申请号：US11388226

申请日：2006-03-23

申请人： Feng Lin ,  Brent Keeth

发明人： Feng Lin ,  Brent Keeth

IPC分类号： H03L7/06

CPC分类号： H03L7/10 ,  H03L7/0814

摘要： An apparatus for synchronizing signals. For devices, such as memory devices, implementing a synchronization device to synchronize signals, a synchronization device having a delay locked loop coupled to a phase locked loop may be implemented. The delay locked loop is implemented to measure the period of a reference signal and to mirror the period into a second delay line such that an adjusted reference signal having a frequency approximately equal to the frequency of the reference clock may be generated. The adjusted reference signal is delivered to an oscillator such that the oscillator begins oscillating at approximately the same frequency as the reference clock signal to provide a fast locking synchronization device.

摘要翻译： 一种用于同步信号的装置。 对于诸如存储设备的设备，实现同步设备来同步信号，可以实现具有耦合到锁相环路的延迟锁定环路的同步设备。 执行延迟锁定环路以测量参考信号的周期并将周期镜像成第二延迟线，使得可以生成具有近似等于参考时钟的频率的频率的经调整的参考信号。 调整的参考信号被传送到振荡器，使得振荡器以与参考时钟信号大致相同的频率开始振荡，以提供快速锁定同步装置。