公开(公告)号：US08803139B2

公开(公告)日：2014-08-12

申请号：US13768708

申请日：2013-02-15

申请人： Kanan Puntambekar ,  Lisa Stecker ,  Kurt Ulmer

发明人： Kanan Puntambekar ,  Lisa Stecker ,  Kurt Ulmer

IPC分类号： H01L29/08 ,  H01L51/05

CPC分类号： H01L51/0516 ,  H01L51/0012 ,  H01L51/0545 ,  H01L51/0558

摘要： A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

摘要翻译： 提供了一种使用氟聚合物分层结晶井制造具有图案化有机半导体的印刷有机薄膜晶体管（OTFT）的方法。 在底栅OTFT的情况下，提供衬底并且形成覆盖衬底的栅电极。 形成覆盖栅电极的栅极电介质，并且覆盖栅极电介质形成源极（S）和漏极（D）电极。 在S / D电极之间形成栅极介电OTFT沟道界面区域。 然后形成具有氟聚合物封存和结晶团的阱，以限定有机半导体印刷区域。 该阱填充有机半导体，覆盖S / D电极和栅极介电OTFT通道界面。 然后，有机半导体结晶。 主要晶粒成核起源于覆盖S / D电极的区域。 结果，形成介于S / D电极之间的有机半导体沟道。

公开(公告)号：US20140054560A1

公开(公告)日：2014-02-27

申请号：US13768708

申请日：2013-02-15

申请人： Kanan Puntambekar ,  Lisa Stecker ,  Kurt Ulmer

发明人： Kanan Puntambekar ,  Lisa Stecker ,  Kurt Ulmer

IPC分类号： H01L51/05

CPC分类号： H01L51/0516 ,  H01L51/0012 ,  H01L51/0545 ,  H01L51/0558

摘要： A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

摘要翻译： 提供了一种使用氟聚合物分层结晶井制造具有图案化有机半导体的印刷有机薄膜晶体管（OTFT）的方法。 在底栅OTFT的情况下，提供衬底并且形成覆盖衬底的栅电极。 形成覆盖栅电极的栅极电介质，并且覆盖栅极电介质形成源极（S）和漏极（D）电极。 在S / D电极之间形成栅极介电OTFT沟道界面区域。 然后形成具有氟聚合物封存和结晶团的阱，以限定有机半导体印刷区域。 该阱填充有机半导体，覆盖S / D电极和栅极介电OTFT通道界面。 然后，有机半导体结晶。 主要晶粒成核起源于覆盖S / D电极的区域。 结果，形成介于S / D电极之间的有机半导体沟道。

公开(公告)号：US20060240588A1

公开(公告)日：2006-10-26

申请号：US11115814

申请日：2005-04-26

申请人： John Conley ,  Yoshi Ono ,  Lisa Stecker

发明人： John Conley ,  Yoshi Ono ,  Lisa Stecker

IPC分类号： H01L21/00

CPC分类号： G01N27/4146 ,  B82Y10/00 ,  B82Y15/00 ,  G11C2213/16 ,  H01L51/0048 ,  H01L51/0545

摘要： A method of fabricating a nanowire CHEMFET sensor mechanism includes preparing a silicon substrate; depositing a polycrystalline ZnO seed layer on the silicon substrate; patterning and etching the polycrystalline ZnO seed layer; depositing an insulating layer over the polycrystalline ZnO seed layer and the silicon substrate; patterning and etching the insulating layer to form contact holes to a source region and a drain region; metallizing the contact holes to form contacts for the source region and the drain region; depositing a passivation dielectric layer over the insulating layer and the contacts; patterning the passivation layer and etching to expose the polycrystalline ZnO seed layer between the source region and the drain region; and growing ZnO nanostructures on the exposed ZnO seed layer to form a ZnO nanostructure CHEMFET sensor device.

摘要翻译： 制造纳米线CHEMFET传感器机构的方法包括制备硅衬底; 在硅衬底上沉积多晶ZnO种子层; 图案化和蚀刻多晶ZnO种子层; 在多晶ZnO种子层和硅衬底上沉积绝缘层; 图案化和蚀刻绝缘层以形成到源极区域和漏极区域的接触孔; 金属化接触孔以形成用于源极区域和漏极区域的触点; 在所述绝缘层和所述触点上沉积钝化介电层; 图案化钝化层并蚀刻以在源极区域和漏极区域之间暴露多晶ZnO晶种层; 并在曝光的ZnO种子层上生长ZnO纳米结构以形成ZnO纳米结构CHEMFET传感器装置。

公开(公告)号：US20060090693A1

公开(公告)日：2006-05-04

申请号：US10977430

申请日：2004-10-29

申请人： John Conley ,  Lisa Stecker

发明人： John Conley ,  Lisa Stecker

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B25/02 ,  C30B29/16 ,  C30B29/605

摘要： Patterned zinc-oxide nanostructures are grown without using a metal catalyst by forming a seed layer of polycrystalline zinc oxide on a surface of a substrate. The seed layer can be formed by an atomic layer deposition technique. The seed layer is patterned, such as by etching, and growth of at least one zinc-oxide nanostructure is induced substantially over the patterned seed layer by, for example, exposing the patterned seed layer to zinc vapor in the presence of a trace amount of oxygen. The seed layer can alternatively be formed by using a spin-on technique, such as a metal organic deposition technique, a spray pyrolisis technique, an RF sputtering technique or by oxidation of a zinc thin film layer formed on the substrate.

摘要翻译： 通过在基板的表面上形成多晶氧化锌的晶种层，生长图案化的氧化锌纳米结构而不使用金属催化剂。 种子层可以通过原子层沉积技术形成。 种子层被图案化，例如通过蚀刻，并且基本上在图案化种子层上诱导至少一种氧化锌纳米结构的生长，例如通过例如将图案化的种子层在痕量的 氧。 种子层可以替代地通过使用旋涂技术形成，例如金属有机沉积技术，喷雾热解技术，RF溅射技术或通过氧化形成在基底上的锌薄膜层。