摘要:
A method of extracting a feature of an image, includes: a first step of performing a logarithmic conversion process for each pixel of an image taken by an electron microscope to carry out non-linear image enhancement; a second step of performing an N(N is a predetermined value) valued process for each pixel of the image underwent the logarithmic conversion process, threshold values for the N valued process being obtained by dividing the whole range of gray levels of the pixels by N, and gray level of the pixel being one of N constant gray level values by the N valued process; a third step of performing a partial differentiatial process in X- and Y-directions for each pixel of the image obtained by the second step, to make "0" the gray levels of pixels within the same area divided by the N valued process and make only the boundary between different areas divided by the N valued process to have a certain gray level; and a fourth step of detecting the boundary and extracting a feature of said image.
摘要:
A method for measuring a size of fine pattern wherein sizes of a plurality of fine patterns are measured using a scanning electron microscope is disclosed. The measuring method comprises the following procedures of obtaining a secondary electron image while scanning an electron beam on a fine pattern, determining whether or not the secondary electron image thus obtained meets a shape judgment criterion which has been set in advance, and, when the criterion is met as a result of determination processing, measuring a size of the fine pattern but, when the criterion is not met as a result of determination processing, moving to a next measurement area without measuring a size of the fine pattern.
摘要:
Analog image data a SEM are converted into digital data, and are processed by a spatial filtering processing, histogram processing, threshold value setting, three-valued image data processing, noise reduction and the like. Area of a pattern in the three-valued image data is calculated by a labelling and calculation processing, and a pattern is sequentially detected by comparing the area of the pattern with a reference area value. The comparison and detection of the same or similar patterns repeated in the SEM image are performed by using the area of the pattern, and are not performed by a shape of the pattern, thereby resulting a precise detection at high speed by using a microprocessor. Since it is possible to perform a pattern recognition from the area value even though the pattern does not have a characteristic, it is possible to precisely detect and recognize a pattern image in high speed.
摘要:
The fluorescent X-ray generated by elements when an X-ray is total reflected from a substrate surface is detected by a fluorescent X-ray detecting circuit; the fluorescent X-ray peak generated by the substrate element and the fluorescent X-ray peaks generated by contaminative elements are separated by a peak separating circuit; an integral intensity I.sub.0 of the fluorescent X-ray peak generated by the substrate element and integral intensities I of the fluorescent X-ray peaks generated by the contaminative elements are calculated by an integral intensity calculating circuit, respectively; and contaminative element concentrations N=N.sub.0 .multidot.(.eta..sub.0 / I.sub.0).multidot.(I / .eta.) (where N.sub.0 denotes the surface concentration of the substrate; .eta..sub.0 denotes the fluorescent yield of the substrate; and .eta. denotes the fluorescent yield of the contaminative elements) are calculated by a contaminative element concentration calculating circuit on the basis of the calculated integral intensities I.sub.0 and I. The contaminative elements can be analyzed non-destructively without use of any analytical curves, so that it is possible to save much labor required to prepare the analytical curves.
摘要:
In the method and apparatus for analyzing contaminative element concentrations, a fluorescent X-ray generated by elements when an X-ray is total reflected from the surface of a substrate is detected by a fluorescent X-ray detector; a peak of the fluorescent X-ray generated by a substrate element and peaks of the fluorescent X-ray generated by other contaminative elements are separated from the detected fluorescent X-ray waveform by a peak separating circuit; and the concentrations of the detected contaminative elements are calculated on the basis of the separated peaks by a calculating circuit. In the peak detection, in particular, the peaks of the contaminative elements to be analyzed are detected from the waveform. When other peaks are present within a predetermed number of channels (energy eV) before and after each detected peak, the channel numbers and the signal intensities between the respective peaks are extracted. Further, the a true peak is determined after obtaining the evaluation values of the respective peaks, so that it is possible to separate peaks from the fluorescent X-ray waveform accurately, even if each peak is split in the observed waveform.
摘要:
Element identification and concentration calculation can be conducted with precision by correcting waveform distortion caused by the energy resolution of a detection system. A smoothing process is effected on a measured waveform of fluorescent X-rays obtained from an object to be measured. A device function of the detection system is obtained for each analytic element, based on the energy resolution of the detection system for a fluorescent X-ray energy value of each analytic element. A deconvolution process is effected on the measured waveform thus smoothed, by using the device functions of the detection system. Analytic elements are identified and concentrations of the analytic elements are obtained from the waveform data after the deconvolution process. The measured waveform is compensated for absorption in a beryllium window prior to smoothing.
摘要:
This method is a method of measuring a taper angle, a thickness or a depth of a semiconductor integrated circuit pattern. Electron beam, light beam or the like is irradiated to a semiconductor integrated circuit pattern provided on a reference plane, thus to form a projected image. The projected image forms a predetermined angle with respect to a reference line set with respect to the reference plane. Then, lengths in a direction of the reference line of the projected images of symmetrical side walls of the pattern are measured to calculate from the ratio of those lengths and angle that the side walls and the reference plane form.
摘要:
A pattern estimating method, wherein during exposure for forming the device pattern, a latent image of a monitor pattern which has the same pitch as an L/S pattern as the device pattern and has a narrower line width than the L/S pattern is formed in a mark area, after developing the device pattern, probing light is applied from a monitor head to the monitor pattern, and under the conditions for preventing generation of diffracted light of first-order or more, the intensity of zero-order light reflected from the monitor pattern is detected, so that the size of the device pattern is estimated on the basis of the prestored relationship between the device pattern size and the zero-order diffracted light intensity.
摘要:
To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for-controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.
摘要:
An electron microscope comprises: a electron optical column 5 for allowing an electron beam aligned and focused by a lens 2, 3, 4 to pass therethrough; a specimen chamber 8 for receiving therein a sample 7 which is irradiated with the electron beam passing through the electron optical column; and a separating thin film 6, mounted so as to close an opening of the electron optical column on the side of the specimen chamber, for separating the electron optical column from the specimen chamber in a vacuum level.