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11.发明授权Reduction of the contact resistance in organic field-effect transistors with palladium contacts by using phosphines and metal-containing phosphines 有权通过使用磷化氢和含金属膦使钯触点的有机场效应晶体管中的接触电阻降低公开(公告)号：US07208782B2
公开(公告)日：2007-04-24
申请号：US11045511
申请日：2005-01-31
IPC分类号： H01L27/148
CPC分类号： H01L51/105 , H01L51/0035 , H01L51/0036 , H01L51/0052 , H01L51/0084 , H01L51/0087 , H01L51/0097 , H01L51/0545
摘要： A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.
摘要翻译： 半导体器件包括半导体路径，包括有机半导体材料的半导体路径，将电荷载流子注入到半导体路径中的第一接触，从半导体路径提取电荷载流子的第二接触，以及包括配置在第一 接触和半导体路径和/或第二接触和半导体路径之间。 该层中的膦用作电荷转移分子，其使得更容易在接触和有机半导体材料之间转移电荷载流子。 结果，可以显着地降低接触和有机半导体材料之间的接触电阻。
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12.发明申请公开(公告)号：US20080315192A1
公开(公告)日：2008-12-25
申请号：US12188966
申请日：2008-08-08
申请人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
发明人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
IPC分类号： H01L51/05
CPC分类号： H01B3/442 , H01L51/052
摘要： An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.
摘要翻译： 本发明的一个实施例提供一种具有介电层的有机场效应晶体管（OFET）的集成电路。 介电层由聚合物制剂制备，包括：约100份至少一种可交联的基础聚合物，约10至约20份至少一种作为亲电交联成分的二 - 或三苄醇化合物，约0.2至约 10份至少一种光酸产生剂和至少一种溶剂。 另一实施例提供半导体制造方法。 该方法包括将聚合物制剂施用于基材表面，干燥聚合物制剂，干燥后交联聚合物制剂，以及在交联后烘烤聚合物制剂。
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公开(公告)号：US20060145149A1
公开(公告)日：2006-07-06
申请号：US11362960
申请日：2006-02-27
申请人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
发明人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
IPC分类号： H01L29/08
CPC分类号： H01B3/442 , H01L51/052
摘要： An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.
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14.发明授权Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit 有权包括有机半导体的集成电路以及用于制造集成电路的方法公开(公告)号：US07825404B2
公开(公告)日：2010-11-02
申请号：US12188966
申请日：2008-08-08
申请人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
发明人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
CPC分类号： H01B3/442 , H01L51/052
摘要： An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.
摘要翻译： 本发明的一个实施例提供一种具有介电层的有机场效应晶体管（OFET）的集成电路。 介电层由聚合物制剂制备，包括：约100份至少一种可交联的基础聚合物，约10至约20份至少一种作为亲电交联成分的二 - 或三苄醇化合物，约0.2至约 10份至少一种光酸产生剂和至少一种溶剂。 另一实施例提供半导体制造方法。 该方法包括将聚合物制剂施用于基材表面，干燥聚合物制剂，干燥后交联聚合物制剂，以及在交联后烘烤聚合物制剂。
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15.发明申请公开(公告)号：US20060202198A1
公开(公告)日：2006-09-14
申请号：US11364847
申请日：2006-02-28
申请人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
发明人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
IPC分类号： H01L29/08
摘要： Embodiments of the invention relate to an integrated circuit comprising an organic semiconductor, particularly an organic field effect transistor (OFET) that is provided with a dielectric layer. The integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one electrophilic crosslinking component, c) 1 to 10 parts of at least one thermal acid catalyst that generates an activating proton at temperatures ranging from 100 to 150° C., dissolved in d) at least one solvent. Other embodiments of the invention further relate to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, especially for OFET's at low temperatures.
摘要翻译： 本发明的实施例涉及一种包括有机半导体，特别是设置有电介质层的有机场效应晶体管（OFET）的集成电路。 该集成电路是通过聚合物配方制备的，所述聚合物配方由以下组成：a）100份至少一种可交联的碱性聚合物，b）10至20份至少一种亲电交联组分，c）1至10份至少一种热 酸催化剂，其在100至150℃的温度范围内产生活化质子，溶于d）至少一种溶剂。 本发明的其他实施例还涉及一种用于制造集成电路的方法，其使得可以生产包括电介质层的集成电路，特别是在低温下为OFET。
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16.发明授权Integrated circuit comprising an organic semiconductor, and method for the production of an integrated circuit 失效包括有机半导体的集成电路以及用于制造集成电路的方法公开(公告)号：US07582896B2
公开(公告)日：2009-09-01
申请号：US11362960
申请日：2006-02-27
申请人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
发明人： Marcus Halik , Hagen Klauk , Guenter Schmid , Andreas Walter , Ute Zschieschang
CPC分类号： H01B3/442 , H01L51/052
摘要： An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.
摘要翻译： 本发明的一个实施例提供一种具有介电层的有机场效应晶体管（OFET）的集成电路。 介电层由聚合物制剂制备，包括：约100份至少一种可交联的基础聚合物，约10至约20份至少一种作为亲电交联成分的二 - 或三苄醇化合物，约0.2至约 10份至少一种光酸产生剂和至少一种溶剂。 另一实施例提供半导体制造方法。 该方法包括将聚合物制剂施用于基材表面，干燥聚合物制剂，干燥后交联聚合物制剂，以及在交联后烘烤聚合物制剂。
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17.发明授权Method of producing organic semiconductors having high charge carrier mobility through &pgr;-conjugated crosslinking groups 失效通过π-共轭交联基团制备具有高载流子迁移率的有机半导体的方法公开(公告)号：US06828406B2
公开(公告)日：2004-12-07
申请号：US10186658
申请日：2002-07-01
申请人： Roland Haasmann , Marcus Halik , Günter Schmid , Andreas Walter
发明人： Roland Haasmann , Marcus Halik , Günter Schmid , Andreas Walter
IPC分类号： G08G6110
CPC分类号： H01L51/0036 , C08G61/10 , H01B1/127 , H01L51/0034 , H01L51/0035 , H01L51/0077 , H01L51/0078
摘要： The organic polymers of the invention have electrical semiconductor properties. The compounds have a backbone of phenylene groups to which side groups with semiconductor properties, or which impart semiconductor properties to the polymer, are bonded. The polymers are obtained by Bergmann cyclization from compounds that contain aromatic groups to which vicinal ethynyl groups are bonded. The polymers are suitable for the production of semiconductor components, such as organic transistors or diodes.
摘要翻译： 本发明的有机聚合物具有电半导体性质。 这些化合物具有与具有半导体性质或赋予聚合物半导体性质的侧基键合的亚苯基的主链。 聚合物通过Bergmann环化从含有邻位乙炔基的芳族基团的化合物获得。 聚合物适用于制造半导体元件，例如有机晶体管或二极管。
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公开(公告)号：US20090066345A1
公开(公告)日：2009-03-12
申请号：US10599470
申请日：2005-03-30
申请人： Hagen Klauk , Marcus Halik , Ute Zschieschang , Guenter Schmid , Grzegorz Darlinski , Rainer Waser , Ralf Brederlow
发明人： Hagen Klauk , Marcus Halik , Ute Zschieschang , Guenter Schmid , Grzegorz Darlinski , Rainer Waser , Ralf Brederlow
CPC分类号： G06K9/00053
摘要： A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.
摘要翻译： 公开了一种基于施加在衬底上的有机场效应晶体管的力传感器。 在一个实施例中，作用在晶体管上的机械力引起其源极 - 漏极电压或其源极 - 漏极电流的变化，其对应于所述力，并且在每种情况下都可以被检测为作用力的测量量， 使用这种力传感器的基于压力的传感器，使用这种类型的多个力传感器的一维或二维位置传感器，以及使用多个这样的力传感器的指纹传感器。
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19.发明授权Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories 失效电荷转移络合物包括电子给体和电子受体，作为电阻记忆体的基础公开(公告)号：US07455795B2
公开(公告)日：2008-11-25
申请号：US11023368
申请日：2004-12-29
CPC分类号： G11C13/0014 , B82Y10/00 , C07D333/06 , C07D409/14 , G11C11/5664 , G11C13/0009 , G11C13/0016 , G11C13/025 , G11C2213/15 , H01L27/285 , H01L51/0036 , H01L51/0046 , H01L51/0078
摘要： Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.
摘要翻译： 描述了用于制造尺寸在纳米范围内并且包括位于两个电极之间的CT复合体的记忆单元的材料。 CT复合物包括噻吩衍生物，吡咯衍生物或酞菁与萘四羧酸，二酐，二酰胺，富勒烯或苝化合物。
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20.发明申请Method for Synthesizing Long-Chain Phosphonic Acid Derivatives and Thiol Derivatives 审中-公开合成长链膦酸衍生物和硫醇衍生物的方法公开(公告)号：US20080275273A1
公开(公告)日：2008-11-06
申请号：US11720453
申请日：2005-11-23
申请人： Franz Effenberger , Steffen Maisch , Steffen Seifritz , Guenter Schmid , Marcus Halik , Hagen Klauk , Ute Zschieschang
发明人： Franz Effenberger , Steffen Maisch , Steffen Seifritz , Guenter Schmid , Marcus Halik , Hagen Klauk , Ute Zschieschang
IPC分类号： C07F9/40
CPC分类号： C07F9/3808 , B82Y30/00 , C07C319/02 , C07C327/28 , C07F9/4006 , H01L51/0516 , H01L51/0545 , H03K3/00 , H03K17/00 , C07C323/12
摘要： A process for synthesizing long-chain phosphonic acid derivatives and thiol derivative is disclosed. One embodiment provides organic compounds which can form a self-assembled monolayer and are obtained by reaction of an olefin with a thiocarboxylic acid and subsequent hydrogenation to give the thiol, or with a phosphite and subsequent hydrolysis to give the phosphonic acid.
摘要翻译： 公开了一种合成长链膦酸衍生物和硫醇衍生物的方法。 一个实施方案提供可以形成自组装单层的有机化合物，其通过烯烃与硫代羧酸的反应并随后氢化得到硫醇，或与亚磷酸酯反应并随后水解得到膦酸而获得。
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