Optical manifold for lidar applications

    公开(公告)号:US11782134B2

    公开(公告)日:2023-10-10

    申请号:US16689057

    申请日:2019-11-19

    摘要: The optical manifold has multiple cores that each generates an outgoing LIDAR signal that carries one or more channels. Scanning heads are located apart from the manifold. Each scanning head is associated with one of the cores and is configured such that each scanning head receives an outgoing LIDAR signal from the associated core. The scanning heads are each configured to transmit one or more LIDAR output signals that each carries light from a different one of the channels and such that the different LIDAR output signals each travels away from the scanning head in a different direction. Each of the cores is associated with different core electronics. The core electronics are configured to tune a property of one of the outgoing LIDAR signals such that the tuning of the property causes a change to the direction that the one or more LIDAR output signals travel away from the scanning head associated with the core electronics.

    MICROWAVE GENERATOR WITH POWER FACTOR CORRECTION FUNCTION AND CONTROL METHOD THEREOF

    公开(公告)号:US20180013385A1

    公开(公告)日:2018-01-11

    申请号:US15632076

    申请日:2017-06-23

    IPC分类号: H03B5/18 G05F1/70 H03B5/02

    摘要: A microwave generator includes a power supply, an output circuit, a feedback oscillator, a pulse controller, a signal combination circuit and a semiconductor amplifier. The power supply converts input voltage and input current into output voltage and output current. The output circuit generates a microwave signal to an output terminal of the microwave generator and a feedback signal according to the microwave signal. The feedback oscillator generates an oscillation signal according to the feedback signal. According to a reference signal, the pulse controller generates a pulse signal. According to the oscillation signal and pulse signal, the signal combination circuit generates a control signal. The semiconductor amplifier generates and adjusts an amplified signal according to the control signal. The output circuit generates the microwave signal according to the amplified signal. The output current is adjusted according to the amplified signal. Consequently, the input current and the input voltage are in phase.

    TRANSMIT-REFERENCE METHODS IN SOFTWARE DEFINED RADIO PLATFORMS FOR COMMUNICATION IN HARSH PROPAGATION ENVIRONMENTS AND SYSTEMS THEREOF
    8.
    发明申请
    TRANSMIT-REFERENCE METHODS IN SOFTWARE DEFINED RADIO PLATFORMS FOR COMMUNICATION IN HARSH PROPAGATION ENVIRONMENTS AND SYSTEMS THEREOF 有权
    软件中的发送参考方法定义了用于通信的无线电平台,其传播环境及其系统

    公开(公告)号:US20150270923A1

    公开(公告)日:2015-09-24

    申请号:US14612205

    申请日:2015-02-02

    IPC分类号: H04K3/00 H04W4/22 H04B1/00

    摘要: A method for adaptive Radio Frequency (RF) jamming according to one embodiment includes dynamically monitoring a RF spectrum; detecting any undesired signals in real time from the RF spectrum; and sending a directional countermeasure signal to jam the undesired signals. A method for adaptive Radio Frequency (RF) communications according to another embodiment includes transmitting a data pulse in a RF spectrum; and transmitting a reference pulse separated by a predetermined period of time from the data pulse; wherein the data pulse is modulated with data, wherein the reference pulse is unmodulated. A method for adaptive Radio Frequency (RF) communications according to yet another embodiment includes receiving a data pulse in a RF spectrum; and receiving a reference pulse separated in time from the data pulse, wherein the data pulse is modulated with data, wherein the reference pulse is unmodulated; and demodulating the pulses.

    摘要翻译: 根据一个实施例的自适应射频(RF)干扰的方法包括动态监测RF频谱; 从RF频谱中实时检测任何不需要的信号; 并发送方向性对策信号以阻塞不需要的信号。 根据另一实施例的用于自适应射频(RF)通信的方法包括在RF频谱中发送数据脉冲; 以及从所述数据脉冲发送与预定时间间隔分开的参考脉冲; 其中用数据调制数据脉冲,其中参考脉冲未被调制。 根据又一实施例的用于自适应射频(RF)通信的方法包括在RF频谱中接收数据脉冲; 以及从所述数据脉冲接收在时间上分离的参考脉冲,其中所述数据脉冲用数据调制,其中所述参考脉冲未被调制; 并解调脉冲。

    Driving circuits with power MOS breakdown protection and driving methods thereof
    9.
    发明授权
    Driving circuits with power MOS breakdown protection and driving methods thereof 有权
    具有功率MOS故障保护的驱动电路及其驱动方法

    公开(公告)号:US08941418B2

    公开(公告)日:2015-01-27

    申请号:US13673099

    申请日:2012-11-09

    申请人: MediaTek Inc.

    发明人: Chun-Chi Chen

    IPC分类号: H03K3/00 H02H9/04 H03K17/081

    摘要: A driving circuit is provided. The driving circuit is capable of driving a load coupled to an output node of the driving circuit. The driving circuit includes an output-stage element, a first N-type metal-oxide-semiconductor (NMOS) transistor, and a first P-type metal-oxide-semiconductor (PMOS) transistor. The output-stage element is coupled between an operation voltage source and the output node. The first NMOS transistor has a gate, a drain coupled to the output node, and a source coupled to a ground. The first PMOS transistor has a gate, a drain coupled to the ground, and a source coupled to the output node. When the first NMOS transistor begins to be turned off, the first PMOS transistor is turned on, and a voltage at the drain of the first NMOS transistor is clamped to be lower than a breakdown trigger voltage of the first NMOS transistor.

    摘要翻译: 提供驱动电路。 驱动电路能够驱动耦合到驱动电路的输出节点的负载。 驱动电路包括输出级元件,第一N型金属氧化物半导体(NMOS)晶体管和第一P型金属氧化物半导体(PMOS)晶体管。 输出级元件耦合在操作电压源和输出节点之间。 第一NMOS晶体管具有栅极,耦合到输出节点的漏极和耦合到地的源极。 第一PMOS晶体管具有栅极,耦合到地的漏极和耦合到输出节点的源极。 当第一NMOS晶体管开始截止时,第一PMOS晶体管导通,并且第一NMOS晶体管的漏极处的电压被钳位为低于第一NMOS晶体管的击穿触发电压。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20140203845A1

    公开(公告)日:2014-07-24

    申请号:US14222822

    申请日:2014-03-24

    发明人: Atsushi Umezaki

    IPC分类号: G09G3/14 H03K3/00 H03B1/00

    摘要: Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.

    摘要翻译: 提供一种半导体器件,其特征在于晶体管数量减少的逆变器电路和移位寄存器电路。 半导体器件包括第一晶体管,第二晶体管和电容器。 第一晶体管的源极和漏极之一电连接到第一布线,另一个电连接到第二布线。 第二晶体管的源极和漏极之一电连接到第一布线,第二晶体管的栅极电连接到第一晶体管的栅极,第二晶体管的源极和漏极的另一个是 电连接到电容器的一个电极,而电容器的另一个电极电连接到第三布线。 第一和第二晶体管具有相同的导电类型。