Capacitor assembly and related method of forming

    公开(公告)号:US09847174B2

    公开(公告)日:2017-12-19

    申请号:US14964120

    申请日:2015-12-09

    CPC classification number: H01G4/258 H01G2/08 H01G4/224 H01G4/32 H01G4/38

    Abstract: A capacitor assembly is disclosed. The capacitor assembly includes a housing. The capacitor assembly further includes a plurality of capacitors disposed within the housing. Furthermore, the capacitor assembly includes a thermally conductive article disposed about at least a portion of a capacitor body of the capacitors, and in thermal contact with the capacitor body. Moreover, the capacitor assembly also includes a heat sink disposed within the housing and in thermal contact with at least a portion of the housing and the thermally conductive article such that the heat sink is configured to remove heat from the capacitor in a radial direction of the capacitor assembly. Further, a method of forming the capacitor assembly is also presented.

    CAPACITOR ASSEMBLY AND RELATED METHOD OF FORMING

    公开(公告)号:US20170169948A1

    公开(公告)日:2017-06-15

    申请号:US14964120

    申请日:2015-12-09

    CPC classification number: H01G4/258 H01G2/08 H01G4/224 H01G4/32 H01G4/38

    Abstract: A capacitor assembly is disclosed. The capacitor assembly includes a housing. The capacitor assembly further includes a plurality of capacitors disposed within the housing. Furthermore, the capacitor assembly includes a thermally conductive article disposed about at least a portion of a capacitor body of the capacitors, and in thermal contact with the capacitor body. Moreover, the capacitor assembly also includes a heat sink disposed within the housing and in thermal contact with at least a portion of the housing and the thermally conductive article such that the heat sink is configured to remove heat from the capacitor in a radial direction of the capacitor assembly. Further, a method of forming the capacitor assembly is also presented.

    MANUFACTURING PROCESSES FOR FORMING METALLIZED FILM CAPACITORS AND RELATED METALLIZED FILM CAPACITORS
    15.
    发明申请
    MANUFACTURING PROCESSES FOR FORMING METALLIZED FILM CAPACITORS AND RELATED METALLIZED FILM CAPACITORS 审中-公开
    用于形成金属化膜电容器和相关金属化膜电容器的制造工艺

    公开(公告)号:US20170062144A1

    公开(公告)日:2017-03-02

    申请号:US14842426

    申请日:2015-09-01

    Abstract: A process for forming a capacitor is presented. The process includes providing a laminate including a dielectric layer disposed on a sacrificial substrate, forming a free-standing metallized dielectric layer and packaging the free-standing metallized dielectric layer to form a capacitor. The dielectric layer includes a polyetherimide. The step of forming the free-standing metallized dielectric layer is performed by: (a) disposing a metal layer on the dielectric layer to form a metalized laminate such that a metalized dielectric layer is formed on the sacrificial substrate, and removing the sacrificial substrate to form the free-standing metallized dielectric layer; or (b) removing the sacrificial substrate from the laminate to form a free-standing dielectric layer, and disposing a metal layer on the free-standing dielectric layer to form the free-standing metallized dielectric layer. A capacitor formed by the process is presented. A process for forming a capacitor by a roll-to-roll processing technique is also presented.

    Abstract translation: 提出了一种形成电容器的工艺。 该方法包括提供包括设置在牺牲衬底上的介电层的层压体,形成独立的金属化介电层并封装自立式金属化介电层以形成电容器。 电介质层包括聚醚酰亚胺。 通过以下步骤进行形成独立的金属化介电层的步骤:(a)在电介质层上设置金属层以形成金属化层压体,使得在牺牲基板上形成金属化介电层,并将牺牲基板去除 形成独立的金属化介电层; 或(b)从层压体中去除牺牲基板以形成独立的电介质层,并在自支撑电介质层上设置金属层以形成独立的金属化介质层。 提出了一种通过该过程形成的电容器。 还提出了通过卷对卷处理技术形成电容器的方法。

Patent Agency Ranking