公开(公告)号：US09514995B1

公开(公告)日：2016-12-06

申请号：US14718760

申请日：2015-05-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Keith E. Fogel ,  Alexander Reznicek ,  Devendra K. Sadana ,  Dominic J. Schepis

IPC: H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10

CPC classification number: H01L21/823878 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823892 ,  H01L27/0924 ,  H01L29/1083 ,  H01L29/66803 ,  H01L29/785

Abstract: A punch through stop layer is formed in a bulk FinFET structure using doped oxides. Dopants are driven into the substrate and base portions of the fins by annealing. The punch through stop layer includes a p-type region and an n-type region, both of which may extend substantially equal distances into the semiconductor fins.

Abstract translation: 通过使用掺杂氧化物的体积FinFET结构形成穿通停止层。 通过退火将掺杂剂驱入散热片的基板和基部。 穿通停止层包括p型区域和n型区域，它们都可以延伸到半导体鳍片中基本相等的距离。

公开(公告)号：US09508640B2

公开(公告)日：2016-11-29

申请号：US13940874

申请日：2013-07-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cheng-Wei Cheng ,  Szu-Lin Cheng ,  Keith E. Fogel ,  Edward W. Kiewra ,  Amlan Majumdar ,  Devendra K. Sadana ,  Kuen-Ting Shiu ,  Yanning Sun

IPC: H01L21/00 ,  H01L23/522 ,  H01L23/485 ,  H01L21/8238 ,  H01L27/12

CPC classification number: H01L23/5226 ,  H01L21/823807 ,  H01L21/823878 ,  H01L23/485 ,  H01L27/1207 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a device with a multi-tiered contact structure includes forming first contacts in via holes down to a first level, forming a dielectric capping layer over exposed portions of the first contacts and forming a dielectric layer over the capping layer. Via holes are opened in the dielectric layer down to the capping layer. Holes are opened in the capping layer through the via holes to expose the first contacts. Contact connectors and second contacts are formed in the via holes such that the first and second contacts are connected through the capping layer by the contact connectors to form multi-tiered contacts.

Abstract translation: 用于形成具有多层接触结构的器件的方法包括将通孔中的第一触点形成为第一级，在第一触点的暴露部分上形成电介质覆盖层，并在覆盖层上形成电介质层。 通孔在电介质层中向下开到封盖层。 孔通过通孔在封盖层中打开以露出第一触点。 接触连接器和第二触点形成在通孔中，使得第一和第二触点通过接触连接器通过覆盖层连接以形成多层接触。

公开(公告)号：US09337436B2

公开(公告)日：2016-05-10

申请号：US14736942

申请日：2015-06-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana ,  Tze-bin Song

IPC: H01L51/48 ,  H01L51/44 ,  H01L51/00 ,  H01L51/42

CPC classification number: H01L51/442 ,  H01L51/0013 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/0037 ,  H01L51/42 ,  H01L51/445 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method for fabricating a photovoltaic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at a weakest interface between the adhesion layer and the substrate by mechanically pulling the release tape to form a transfer substrate including the adhesion layer, the material layer and the release tape. The transfer substrate is transferred to a target substrate to contact the adhesion layer to the target substrate. The transfer substrate includes a material sensitive to formation processes of the transfer substrate such that exposure to the formation processes of the transfer substrate is avoided by the target substrate.