公开(公告)号：US08815674B1

公开(公告)日：2014-08-26

申请号：US14172135

申请日：2014-02-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Berthold Reimer ,  Markus Lenski ,  Bastian Haussdoerfer ,  Ardechir Pakfar

IPC: H01L21/8238 ,  H01L21/28 ,  H01L29/40

CPC classification number: H01L29/401 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/78

Abstract: One method disclosed includes forming a sidewall spacer proximate a gate structure, forming a sacrificial layer of material above a protective cap layer, the sidewall spacer and a substrate, forming a sacrificial protection layer above the sacrificial layer, reducing a thickness of the sacrificial protection layer such that its upper surface is positioned at a level that is below the upper surface of the protective cap layer, performing a first etching process to remove a portion of the sacrificial layer and thereby expose the protective cap layer for further processing, performing a wet acid etching process that includes diluted HF acid in the etch chemistry to remove the protective cap layer and performing at least one process operation to remove at least one of the reduced-thickness sacrificial protection layer or the sacrificial layer from above the surface of the substrate.

Abstract translation: 所公开的一种方法包括在栅极结构附近形成侧壁间隔物，在保护盖层之上形成牺牲层材料，侧壁间隔物和衬底，在牺牲层上形成牺牲保护层，减小牺牲保护层的厚度 使得其上表面位于保护盖层的上表面下方的水平处，执行第一蚀刻工艺以去除牺牲层的一部分，从而露出保护盖层用于进一步处理，执行湿酸 蚀刻工艺，其在蚀刻化学中包括稀释的HF酸以去除保护盖层，并执行至少一个工艺操作以从衬底的表面上方去除至少一个减薄的牺牲保护层或牺牲层。