公开(公告)号：US09916903B2

公开(公告)日：2018-03-13

申请号：US14514289

申请日：2014-10-14

Applicant: GlobalFoundries Inc.

Inventor： Akhilesh Gautam ,  Suresh Uppal ,  Min-hwa Chi

IPC: G11C17/12 ,  H01L27/112 ,  G11C17/18

CPC classification number: G11C17/12 ,  G11C17/18 ,  H01L27/11233

Abstract: At least one method, apparatus and system disclosed involves hard-coding data into an integrated circuit device. An integrated circuit device provided. Data for hard-wiring information into a portion of the integrated circuit device is received. A stress voltage signal is provided to a portion of a transistor of the integrated circuit device for causing a dielectric breakdown of the portion of the transistor for hard-wiring the data.

公开(公告)号：US20170271032A1

公开(公告)日：2017-09-21

申请号：US15615660

申请日：2017-06-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Akhilesh Gautam ,  Randy W. Mann ,  William McMahon ,  Yoann Mamy Randriamihaja ,  Yuncheng Song

IPC: G11C29/52 ,  G11C11/412 ,  G11C11/419

CPC classification number: G11C29/52 ,  G11C7/04 ,  G11C11/412 ,  G11C11/419

Abstract: We disclose methods, apparatus, and systems for improving semiconductor device writeability through bias temperature instability. Such a device may comprise a plurality of cells of an array, wherein each of the cells comprises a pass gate and a latch; a plurality of word lines, wherein each word line comprises a supply voltage line (VCS) which supplies voltage to each latch of a first number of cells; an array VCS driver electrically connected to each VCS; and a control line configured to provide an operational array supply voltage, a first array supply voltage, or a second array supply voltage to each VCS through the array VCS driver.