公开(公告)号：US20080315181A1

公开(公告)日：2008-12-25

申请号：US12072320

申请日：2008-02-25

申请人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

发明人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

IPC分类号： H01L29/12 ,  H01L21/205

CPC分类号： H01L29/872 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66143

摘要： Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.

摘要翻译： 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管（s-SWNT）的肖特基二极管，用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻，在单个器件中并行生长多个SWNT，并且金属管被选择性地烧毁。 在低偏差下，这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz（THz）频率下，这些二极管作为室温下的直接检测器的建模，表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率（NEP）在10- 13 W /平方根（√）Hz。

公开(公告)号：US06692680B2

公开(公告)日：2004-02-17

申请号：US09970246

申请日：2001-10-03

申请人： Jeong-Bong Lee ,  Harish Manohara ,  Kabseog Kim ,  Sang-Won Park

发明人： Jeong-Bong Lee ,  Harish Manohara ,  Kabseog Kim ,  Sang-Won Park

IPC分类号： B29C3338

CPC分类号： B81C99/0085 ,  B29C33/3842 ,  B29C33/3857 ,  B29C33/424 ,  B81C2201/0109

摘要： Methods of rapidly prototyping microstructures such as HARMs are disclosed. A high precision process uses polymeric microstructure replication techniques and sacrificial layer etching techniques to mass produce high aspect ratio metallic and polymer micromold inserts. In one embodiment, after fabrication of an initial micromold insert, high aspect ratio replications are created by casting replication material, such as PDMS, directly onto the initial micromold insert. The replicated HARM is coated with a sacrificial layer and then electroplated to replicate another set of micromold inserts. After the electroplating process is completed, the sacrificial layer is etched away to release the replicated micromold inserts.

摘要翻译： 公开了快速成型微结构如HARM的方法。 高精度工艺使用聚合物微结构复制技术和牺牲层蚀刻技术来大量生产高纵横比金属和聚合物微胶条插入物。 在一个实施例中，在制造初始微胶片插入物之后，通过将复制材料（例如PDMS）直接注射到初始微胶片插入件上来产生高纵横比重复。 复制的HARM涂覆有牺牲层，然后电镀以复制另一组微胶片插入物。 电镀工艺完成后，蚀刻掉牺牲层以释放复制的微胶片插入物。

公开(公告)号：US07964433B2

公开(公告)日：2011-06-21

申请号：US12462960

申请日：2009-08-12

申请人： Youngsam Bae ,  Harish Manohara ,  Sohrab Mobasser ,  Choonsup Lee

发明人： Youngsam Bae ,  Harish Manohara ,  Sohrab Mobasser ,  Choonsup Lee

IPC分类号： H01L21/00

CPC分类号： G02B1/118 ,  G02B27/0018

摘要： Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

摘要翻译： 描述了具有防反射表面的装置。 该器件包括在衬底上形成有多个硅尖峰的硅衬底。 在硅尖上形成第一金属层以形成抗反射表面。 该装置还包括延伸穿过基底的孔。 在基板上形成第二金属层。 第二金属层包括与孔对准的孔。 间隔件与硅衬底附接以在附接的传感器装置之间提供间隙。 因此，作为微太阳传感器操作，进入孔的光通过孔，以由传感器装置检测。 此外，由传感器装置朝向硅衬底的第一侧反射的光被第一金属层和硅尖头吸收，从而防止反射回传感器装置。

公开(公告)号：US20060261433A1

公开(公告)日：2006-11-23

申请号：US11439625

申请日：2006-05-23

申请人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

发明人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

IPC分类号： H01L21/00

CPC分类号： H01L29/872 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66143

摘要： Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.

摘要翻译： 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管（s-SWNT）的肖特基二极管，用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻，在单个器件中并行生长多个SWNT，并且金属管被选择性地烧毁。 在低偏差下，这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz（THz）频率下，这些二极管作为室温下的直接检测器的建模，表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率（NEP）在10- 13 W /平方根（√）Hz。

公开(公告)号：US20060066202A1

公开(公告)日：2006-03-30

申请号：US11137725

申请日：2005-05-24

申请人： Harish Manohara ,  Michael Bronikowski

发明人： Harish Manohara ,  Michael Bronikowski

IPC分类号： H01J1/14 ,  H01J1/05 ,  H01K1/04 ,  H01J19/06

CPC分类号： H01J9/025 ,  B82Y10/00 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/789

摘要： High-current density field emission sources using arrays of nanofeatures bundles and methods of manufacturing such field emission sources are provided. Variable field emission performance is provided with the variance in the bundle diameter and the inter-bundle spacing, and optimal geometries for the lithographically patterned arrays were determined. Arrays of 1-μm and 2-μm diameter multi-walled carbon nanotube bundles spaced 5 μm apart (edge-to-edge spacing) were identified as the most optimum combination, routinely producing 1.5 to 1.8 A/cm2 at low electric fields of approximately 4 V/μm, rising to >6 A/cm2 at 20 V/μm over a ˜100-μm-diameter area.

摘要翻译： 提供了使用纳米尺寸束阵列的大电流密度场发射源和制造这种场致发射源的方法。 可变场发射性能具有束直径和束间距的变化，并且确定了用于光刻图案阵列的最佳几何形状。 被认为是最优选的组合，通常产生1.5至1.8A / cm 2的数量的间隔5毫米（边缘到边缘间距）的1毫米和2毫米直径的多壁碳纳米管束的数组， SUP>在大约4V / mum的低电场下，在〜100-mum直径的区域上以20V / m 2升高至> 6A / cm 2。