公开(公告)号：US20060066202A1

公开(公告)日：2006-03-30

申请号：US11137725

申请日：2005-05-24

申请人： Harish Manohara ,  Michael Bronikowski

发明人： Harish Manohara ,  Michael Bronikowski

IPC分类号： H01J1/14 ,  H01J1/05 ,  H01K1/04 ,  H01J19/06

CPC分类号： H01J9/025 ,  B82Y10/00 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/789

摘要： High-current density field emission sources using arrays of nanofeatures bundles and methods of manufacturing such field emission sources are provided. Variable field emission performance is provided with the variance in the bundle diameter and the inter-bundle spacing, and optimal geometries for the lithographically patterned arrays were determined. Arrays of 1-μm and 2-μm diameter multi-walled carbon nanotube bundles spaced 5 μm apart (edge-to-edge spacing) were identified as the most optimum combination, routinely producing 1.5 to 1.8 A/cm2 at low electric fields of approximately 4 V/μm, rising to >6 A/cm2 at 20 V/μm over a ˜100-μm-diameter area.

摘要翻译： 提供了使用纳米尺寸束阵列的大电流密度场发射源和制造这种场致发射源的方法。 可变场发射性能具有束直径和束间距的变化，并且确定了用于光刻图案阵列的最佳几何形状。 被认为是最优选的组合，通常产生1.5至1.8A / cm 2的数量的间隔5毫米（边缘到边缘间距）的1毫米和2毫米直径的多壁碳纳米管束的数组， SUP>在大约4V / mum的低电场下，在〜100-mum直径的区域上以20V / m 2升高至> 6A / cm 2。

公开(公告)号：US08387465B2

公开(公告)日：2013-03-05

申请号：US12323017

申请日：2008-11-25

申请人： Harish Manohara ,  Anupama B. Kaul

发明人： Harish Manohara ,  Anupama B. Kaul

IPC分类号： G01L9/00

CPC分类号： G01L21/12

摘要： A miniature thermal conductivity gauge employs a carbon single-walled-nanotube. The gauge operates on the principle of thermal exchange between the voltage-biased nanotube and the surrounding gas at low levels of power and low temperatures to measure vacuum across a wide dynamic range. The gauge includes two terminals, a source of constant voltage to the terminals, a single-walled carbon nanotube between the terminals, a calibration of measured conductance of the nanotube to magnitudes of surrounding vacuum and a current meter in electrical communication with the source of constant voltage. Employment of the nanotube for measuring vacuum includes calibrating the electrical conductance of the nanotube to magnitudes of vacuum, exposing the nanotube to a vacuum, applying a constant voltage across the nanotube, measuring the electrical conductance of the nanotube in the vacuum with the constant voltage applied and converting the measured electrical conductance to the corresponding calibrated magnitude of vacuum using the calibration. The nanotube may be suspended to minimize heat dissipation through the substrate, increasing sensitivity at even tower pressures.

摘要翻译： 微型热导率计采用碳单壁纳米管。 该仪表的工作原理是在低功率和低温度下的电压偏置纳米管和周围气体之间的热交换原理，以测量宽动态范围内的真空度。 测量仪包括两个端子，端子具有恒定电压源，端子之间的单壁碳纳米管，校准测量的纳米管的电导率与周围真空的大小以及与常数源电连通的电流计 电压。 纳米管用于测量真空包括校准纳米管的电导率至真空度，将纳米管暴露于真空，在纳米管上施加恒定电压，在施加恒定电压的情况下测量真空中纳米管的电导率 并使用校准将所测量的电导转换成相应的校准的真空度。 可以悬浮纳米管以最小化通过基底的散热，在甚至更低的压力下增加灵敏度。

公开(公告)号：US08193995B2

公开(公告)日：2012-06-05

申请号：US12468253

申请日：2009-05-19

申请人： Mohammad M. Mojarradi ,  Goutam Chattopadhyay ,  Harish Manohara ,  Hadi Mojaradi

发明人： Mohammad M. Mojarradi ,  Goutam Chattopadhyay ,  Harish Manohara ,  Hadi Mojaradi

IPC分类号： H01Q13/10

CPC分类号： H01Q13/10 ,  H01Q1/40 ,  H01Q21/064

摘要： In one embodiment, a slot array antenna comprising a quartz layer and a silicon layer, wherein the quartz and silicon layers are matched to suppress microwave modes, and a metal layer adjacent to the silicon layer comprising offset cuts.

摘要翻译： 在一个实施例中，包括石英层和硅层的缝隙阵列天线，其中石英和硅层匹配以抑制微波模式，以及与硅层相邻的金属层包括偏移切割。

公开(公告)号：US20110057164A1

公开(公告)日：2011-03-10

申请号：US12140564

申请日：2008-06-17

申请人： Risaku Toda ,  Michael J. Bronikowski ,  Edward M. Luong ,  Harish Manohara

发明人： Risaku Toda ,  Michael J. Bronikowski ,  Edward M. Luong ,  Harish Manohara

IPC分类号： H01L29/41 ,  H01L21/302 ,  B82Y20/00 ,  B82Y99/00

CPC分类号： H01L21/302 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01J1/3042 ,  H01J1/3044 ,  H01J3/021 ,  H01J3/022 ,  H01J9/025 ,  H01J2203/0224 ,  Y10S977/842 ,  Y10S977/939

摘要： A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.

摘要翻译： 具有通过双硅绝缘体工艺制造的具有悬垂栅的碳纳米管场发射器件。 描述和要求保护其他实施例。

公开(公告)号：US20100009495A1

公开(公告)日：2010-01-14

申请号：US12462960

申请日：2009-08-12

申请人： Youngsam Bae ,  Harish Manohara ,  Sohrab Mobasser ,  Choonsup Lee

发明人： Youngsam Bae ,  Harish Manohara ,  Sohrab Mobasser ,  Choonsup Lee

IPC分类号： H01L31/0232 ,  H01L21/00

CPC分类号： G02B1/118 ,  G02B27/0018

摘要： Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

摘要翻译： 描述了具有防反射表面的装置。 该器件包括在衬底上形成有多个硅尖峰的硅衬底。 在硅尖上形成第一金属层以形成抗反射表面。 该装置还包括延伸穿过基底的孔。 在基板上形成第二金属层。 第二金属层包括与孔对准的孔。 间隔件与硅衬底附接以在附接的传感器装置之间提供间隙。 因此，作为微太阳传感器操作，进入孔的光通过孔，以由传感器装置检测。 此外，由传感器装置朝向硅衬底的第一侧反射的光被第一金属层和硅尖头吸收，从而防止反射回传感器装置。

公开(公告)号：US20090108183A1

公开(公告)日：2009-04-30

申请号：US11518537

申请日：2006-09-07

申请人： Youngsam Bae ,  Sohrab Mooasser ,  Harish Manohara ,  Choonsup Lee ,  Kungsam Bae

发明人： Youngsam Bae ,  Sohrab Mooasser ,  Harish Manohara ,  Choonsup Lee ,  Kungsam Bae

IPC分类号： H01J40/14 ,  H01J3/14 ,  G02B27/00

CPC分类号： G02B1/118 ,  G02B27/0018

摘要： Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

摘要翻译： 描述了具有防反射表面的装置。 该器件包括在衬底上形成有多个硅尖峰的硅衬底。 在硅尖上形成第一金属层以形成抗反射表面。 该装置还包括延伸穿过基底的孔。 在基板上形成第二金属层。 第二金属层包括与孔对准的孔。 间隔件与硅衬底附接以在附接的传感器装置之间提供间隙。 因此，作为微太阳传感器操作，进入孔的光通过孔，以由传感器装置检测。 此外，由传感器装置朝向硅衬底的第一侧反射的光被第一金属层和硅尖头吸收，从而防止反射回传感器装置。

公开(公告)号：US20080280583A1

公开(公告)日：2008-11-13

申请号：US12070212

申请日：2008-02-15

申请人： Goutam Chattopadhyay ,  Harish Manohara ,  Peter H. Siegel ,  John Ward

发明人： Goutam Chattopadhyay ,  Harish Manohara ,  Peter H. Siegel ,  John Ward

IPC分类号： H04B1/26

CPC分类号： H04B1/18 ,  H01P1/161 ,  H01P3/023 ,  H01P5/182 ,  H01Q13/02 ,  H01Q13/0283

摘要： In an embodiment, a submillimeter wave heterodyne receiver includes a finline ortho-mode transducer comprising thin tapered metallic fins deposited on a thin dielectric substrate to separate a vertically polarized electromagnetic mode from a horizontally polarized electromagnetic mode. Other embodiments are described and claimed.

摘要翻译： 在一个实施例中，亚毫米波外差接收器包括鳍状正交模式换能器，其包括沉积在薄电介质基底上的薄锥形金属翅片以将垂直极化电磁模式与水平极化电磁模式分离。 描述和要求保护其他实施例。

公开(公告)号：US20110174079A1

公开(公告)日：2011-07-21

申请号：US12323017

申请日：2008-11-25

申请人： Harish Manohara ,  Anupama B. Kaul

发明人： Harish Manohara ,  Anupama B. Kaul

IPC分类号： G01L21/12

CPC分类号： G01L21/12

摘要： A miniature thermal conductivity gauge employs a carbon single-walled-nanotube. The gauge operates on the principle of thermal exchange between the voltage-biased nanotube and the surrounding gas at low levels of power and low temperatures to measure vacuum across a wide dynamic range. The gauge includes two terminals, a source of constant voltage to the terminals, a single-walled carbon nanotube between the terminals, a calibration of measured conductance of the nanotube to magnitudes of surrounding vacuum and a current meter in electrical communication with the source of constant voltage. Employment of the nanotube for measuring vacuum includes calibrating the electrical conductance of the nanotube to magnitudes of vacuum, exposing the nanotube to a vacuum, applying a constant voltage across the nanotube, measuring the electrical conductance of the nanotube in the vacuum with the constant voltage applied and converting the measured electrical conductance to the corresponding calibrated magnitude of vacuum using the calibration. The nanotube may be suspended to minimize heat dissipation through the substrate, increasing sensitivity at even tower pressures.

摘要翻译： 微型热导率计采用碳单壁纳米管。 该仪表的工作原理是在低功率和低温度下的电压偏置纳米管和周围气体之间的热交换原理，以测量宽动态范围内的真空度。 测量仪包括两个端子，端子具有恒定电压源，端子之间的单壁碳纳米管，校准测量的纳米管的电导率与周围真空的大小以及与常数源电连通的电流计 电压。 纳米管用于测量真空包括校准纳米管的电导率至真空度，将纳米管暴露于真空，在纳米管上施加恒定电压，在施加恒定电压的情况下测量真空中纳米管的电导 并使用校准将所测量的电导转换成相应的校准的真空度。 可以悬浮纳米管以最小化通过基底的散热，在甚至更低的压力下增加灵敏度。

公开(公告)号：US07595477B2

公开(公告)日：2009-09-29

申请号：US11518537

申请日：2006-09-07

申请人： Youngsman Bae ,  Sohrab Mooasser ,  Harish Manohara ,  Choonsup Lee ,  Kungsam Bae

发明人： Youngsman Bae ,  Sohrab Mooasser ,  Harish Manohara ,  Choonsup Lee ,  Kungsam Bae

IPC分类号： H01J3/14

CPC分类号： G02B1/118 ,  G02B27/0018

摘要： Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.

摘要翻译： 描述了具有防反射表面的装置。 该器件包括在衬底上形成有多个硅尖峰的硅衬底。 在硅尖上形成第一金属层以形成抗反射表面。 该装置还包括延伸穿过基底的孔。 在基板上形成第二金属层。 第二金属层包括与孔对准的孔。 间隔件与硅衬底附接以在附接的传感器装置之间提供间隙。 因此，作为微太阳传感器操作，进入孔的光通过孔，以由传感器装置检测。 此外，由传感器装置朝向硅衬底的第一侧反射的光被第一金属层和硅尖头吸收，从而防止反射回传感器装置。

公开(公告)号：US20080315181A1

公开(公告)日：2008-12-25

申请号：US12072320

申请日：2008-02-25

申请人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

发明人： Harish Manohara ,  Brian Hunt ,  Erich Schlecht ,  Peter Siegel ,  Eric Wong

IPC分类号： H01L29/12 ,  H01L21/205

CPC分类号： H01L29/872 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66143

摘要： Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.

摘要翻译： 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管（s-SWNT）的肖特基二极管，用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻，在单个器件中并行生长多个SWNT，并且金属管被选择性地烧毁。 在低偏差下，这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz（THz）频率下，这些二极管作为室温下的直接检测器的建模，表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率（NEP）在10- 13 W /平方根（√）Hz。