公开(公告)号：US08012304B2

公开(公告)日：2011-09-06

申请号：US11408559

申请日：2006-04-21

申请人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： H01L21/306 ,  C23C16/46 ,  C23C16/52

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer zone heat exchangers coupled to respective inner and outer zones of said electrostatic chuck. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.

摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域 每当工件保持在表面上时形成的工件表面界面，以及联接到所述静电卡盘的相应内部和外部区域的内部和外部区域热交换器。 反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和 外部温度传感器。 耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度 传感器分别更接近所需的温度。

公开(公告)号：US20100319851A1

公开(公告)日：2010-12-23

申请号：US12855674

申请日：2010-08-12

申请人： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： C23F1/08 ,  H01L21/306

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.

摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。 反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递，以及耦合到热模型和存储器的控制处理器，并且响应于所述温度传感器控制背侧气体压力源 从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

公开(公告)号：US08608900B2

公开(公告)日：2013-12-17

申请号：US11409183

申请日：2006-04-21

申请人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： H01L21/3065 ,  C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  C23C16/503 ,  C23C16/509

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.

摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。 反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递;以及控制处理器，其耦合到热模型和存储器，并且响应于所述热模型和存储器控制背侧气体压力源 从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

公开(公告)号：US08337660B2

公开(公告)日：2012-12-25

申请号：US12855678

申请日：2010-08-12

申请人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

发明人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

IPC分类号： H01L21/306 ,  C23C16/46 ,  C23C16/52 ,  H01L21/683

CPC分类号： H01L21/67248 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

公开(公告)号：US08092639B2

公开(公告)日：2012-01-10

申请号：US12855674

申请日：2010-08-12

申请人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

发明人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.

摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。 反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递;以及控制处理器，其耦合到热模型和存储器，并且响应于所述热模型和存储器控制背侧气体压力源 从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

公开(公告)号：US08221580B2

公开(公告)日：2012-07-17

申请号：US11408567

申请日：2006-04-21

申请人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

发明人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

IPC分类号： H01L21/3065 ,  C23C16/52 ,  C23C16/46 ,  C23C16/458

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.

摘要翻译： 具有反应室和具有用于将工件保持在腔室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于将选定压力下的导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，并且蒸发器位于静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电吸盘中的温度传感器，能够模拟蒸发器和表面之间的热传递的热模型，其基于来自温度传感器和耦合到热模型的敏捷控制处理器的测量，并控制背侧气体压力源 响应于来自所选压力的变化模型的预测，其将使由传感器测量的温度更接近所需温度。

公开(公告)号：US08157951B2

公开(公告)日：2012-04-17

申请号：US11408333

申请日：2006-04-21

申请人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： H01L21/306 ,  C23C16/52 ,  C23C16/46

CPC分类号： H01L21/67248 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

摘要翻译： 用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。 反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到 所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。 反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制 气体阀响应于温度探头的输出与所需温度之间的差异。

公开(公告)号：US20100319852A1

公开(公告)日：2010-12-23

申请号：US12855675

申请日：2010-08-12

申请人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, JR. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： C23F1/08 ,  H01L21/306

CPC分类号： H01L21/67109 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.

摘要翻译： 用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路， 制冷剂入口和制冷剂出口。 优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。 优选地，蒸发器内的制冷剂在气相和液相之间分配。 结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。 该特征改善了静电卡盘的直径上的温度分布的均匀性。

公开(公告)号：US20100303680A1

公开(公告)日：2010-12-02

申请号：US12855678

申请日：2010-08-12

申请人： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Douglas A. Buchberger, JR. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： B01J19/08

CPC分类号： H01L21/67248 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

摘要翻译： 用于加工工件的等离子体反应器包括反应室，腔室内的静电吸盘具有用于支撑工件的顶表面，并且在顶表面上具有凹陷，每当由搁置在顶表面上的工件覆盖时形成封闭的气体流动通道。 反应器还包括热耦合到静电卡盘的热控制装置，RF等离子体偏置功率发生器，其被耦合以向静电卡盘施加RF功率，导热气体的加压气体供应，将加压气体供应连接到 所述凹槽有助于用导热气体填充通道，用于在工件的背面与静电卡盘之间传热，其传热速率是导热气体工件背面压力的函数。 反应器还包括敏捷工件温度控制回路，其包括（a）静电卡盘中的温度探针，和（b）耦合到温度探头的输出并响应于指定的期望温度的背侧气体压力控制器，控制器控制 气体阀响应于温度探头的输出与所需温度之间的差异。

公开(公告)号：US08092638B2

公开(公告)日：2012-01-10

申请号：US11409292

申请日：2006-04-21

申请人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67109 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.

摘要翻译： 用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路， 制冷剂入口和制冷剂出口。 优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。 优选地，蒸发器内的制冷剂在气相和液相之间分配。 结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。 该特征改善了静电卡盘的直径上的温度分布的均匀性。