SELF-HEALING DOT-PRODUCT ENGINE
    11.
    发明申请

    公开(公告)号:US20200312406A1

    公开(公告)日:2020-10-01

    申请号:US16364717

    申请日:2019-03-26

    Abstract: A DPE memristor crossbar array system includes a plurality of partitioned memristor crossbar arrays. Each of the plurality of partitioned memristor crossbar arrays includes a primary memristor crossbar array and a redundant memristor crossbar array. The redundant memristor crossbar array includes values that are mathematically related to values within the primary memristor crossbar array. In addition, the plurality of partitioned memristor crossbar arrays includes a block of shared analog circuits coupled to the plurality of partitioned memristor crossbar arrays. The block of shared analog circuits is to determine a dot product value of voltage values generated by at least one partitioned memristor crossbar array of the plurality of partitioned memristor crossbar arrays.

    Error correction code in memory
    12.
    发明授权

    公开(公告)号:US10312943B2

    公开(公告)日:2019-06-04

    申请号:US15468619

    申请日:2017-03-24

    Abstract: In one example in accordance with the present disclosure, a system comprises a plurality of memory dies, a first region of memory allocated for primary ECC spread across a first subset of at least one memory die belonging to the plurality of memory die, wherein a portion of the primary ECC is allocated to each data block and a second region of memory allocated for secondary ECC spread across a second subset of at least one memory die included in the plurality of memory die. The system also comprises a memory controller configured to determine that an error within the first data block cannot be corrected using a first portion of the primary ECC allocated to the first data block, access the second region allocated for secondary ECC stored on the at least one memory die belonging to the plurality of memory die and attempt to correct the error using the primary and secondary ECC.

    SELF-HEALING DOT-PRODUCT ENGINE
    14.
    发明申请

    公开(公告)号:US20210225440A1

    公开(公告)日:2021-07-22

    申请号:US17223435

    申请日:2021-04-06

    Abstract: A DPE memristor crossbar array system includes a plurality of partitioned memristor crossbar arrays. Each of the plurality of partitioned memristor crossbar arrays includes a primary memristor crossbar array and a redundant memristor crossbar array. The redundant memristor crossbar array includes values that are mathematically related to values within the primary memristor crossbar array. In addition, the plurality of partitioned memristor crossbar arrays includes a block of shared analog circuits coupled to the plurality of partitioned memristor crossbar arrays. The block of shared analog circuits is to determine a dot product value of voltage values generated by at least one partitioned memristor crossbar array of the plurality of partitioned memristor crossbar arrays.

    Self-healing dot-product engine
    15.
    发明授权

    公开(公告)号:US10984860B2

    公开(公告)日:2021-04-20

    申请号:US16364717

    申请日:2019-03-26

    Abstract: A DPE memristor crossbar array system includes a plurality of partitioned memristor crossbar arrays. Each of the plurality of partitioned memristor crossbar arrays includes a primary memristor crossbar array and a redundant memristor crossbar array. The redundant memristor crossbar array includes values that are mathematically related to values within the primary memristor crossbar array. In addition, the plurality of partitioned memristor crossbar arrays includes a block of shared analog circuits coupled to the plurality of partitioned memristor crossbar arrays. The block of shared analog circuits is to determine a dot product value of voltage values generated by at least one partitioned memristor crossbar array of the plurality of partitioned memristor crossbar arrays.

    Write tracking for memories
    16.
    发明授权

    公开(公告)号:US10474389B2

    公开(公告)日:2019-11-12

    申请号:US15201981

    申请日:2016-07-05

    Abstract: In various examples, device comprises a memory and a memory controller. The memory controller comprises a write tracking buffer. The memory controller to: receive a write request bound for the memory, store an entry associated with the write request in the write tracking buffer, and determine an access pattern of the memory. The access pattern indicates a high or a low write bandwidth of the memory. The memory controller to execute the write request bound for the memory based on the determined memory access pattern, complete execution of the write request, and responsive to completing execution of the write request, free the entry associated with the write request from the write tracking buffer.

    WRITE TRACKING FOR MEMORIES
    17.
    发明申请

    公开(公告)号:US20180011660A1

    公开(公告)日:2018-01-11

    申请号:US15201981

    申请日:2016-07-05

    CPC classification number: G06F3/0656 G06F3/061 G06F3/0673 G06F3/0679

    Abstract: In various examples, device comprises a memory and a memory controller. The memory controller comprises a write tracking buffer. The memory controller to: receive a write request bound for the memory, store an entry associated with the write request in the write tracking buffer, and determine an access pattern of the memory. The access pattern indicates a high or a low write bandwidth of the memory. The memory controller to execute the write request bound for the memory based on the determined memory access pattern, complete execution of the write request, and responsive to completing execution of the write request, free the entry associated with the write request from the write tracking buffer.

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