公开(公告)号：US20060261802A1

公开(公告)日：2006-11-23

申请号：US11391579

申请日：2006-03-28

申请人： Toshiyuki Oohashi ,  Yukio Wakui

发明人： Toshiyuki Oohashi ,  Yukio Wakui

IPC分类号： G01B7/30

CPC分类号： G06F3/0338

摘要： A magnetic sensor includes first through fourth GMR elements. The fixed layers of the first through fourth GMR elements have respective magnetization directions toward the X-axis positive, X-axis negative, Y-axis negative, and Y-axis positive directions. When a magnet is located at the initial position, the free layers of the first through fourth GMR elements have respective magnetization directions toward the Y-axis positive, Y-axis negative, X-axis negative, and X-axis positive directions. When the magnet is located at the initial position, the magnetization axis of the magnet passes through the centroid of the first through fourth GMR elements. The magnetic sensor detects, from the resistances of these GMR elements, changes in horizontal magnetic fields of the magnet which pass through the first through fourth GMR elements and which change in accordance with the moved position of the magnet, to thereby determine the position of the magnet.

公开(公告)号：US06940701B2

公开(公告)日：2005-09-06

申请号：US10874224

申请日：2004-06-24

申请人： Toshiyuki Oohashi ,  Yukio Wakui

发明人： Toshiyuki Oohashi ,  Yukio Wakui

IPC分类号： H01L43/06 ,  G01D5/14 ,  G01D5/16 ,  G01R33/09 ,  H01F10/32 ,  H01F13/00 ,  H01F17/00 ,  H01F41/30 ,  H01L43/08 ,  G11B5/127

CPC分类号： G01D5/145 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3295 ,  H01F13/00 ,  H01F17/0006 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49034

摘要： The present invention aims to provide a magnetic sensor provided with a magnetoresistive effect element capable of stably maintaining a direction of magnetization in a magnetic domain of a free layer.The magnetic sensor includes a magnetoresistive effect element provided with narrow zonal portions 11a . . . 11a including a pinned layer and a free layer. Disposed below both ends of the free layer are bias magnet films 11b . . . 11b composed of a permanent magnet that applies to the free layer a bias magnetic field in a predetermined direction and an initializing coil 31 that is disposed in the vicinity of the free layer and applies to the free layer a magnetic field having the direction same as that of the bias magnetic field by being energized under a predetermined condition. Further, magnetizing the bias magnet films and fixing the direction of magnetization of the pinned layer are performed by a magnetic field formed by a magnet array configured such that plural permanent magnets are arranged on a lattice point of a tetragonal lattice and a polarity of a magnet pole of each permanent magnet is different from a polarity of the other adjacent magnet pole spaced by the shortest route.

摘要翻译： 本发明的目的在于提供一种具有能够稳定地保持自由层的磁畴中的磁化方向的磁阻效应元件的磁传感器。 磁传感器包括具有窄带状部分11a的磁阻效应元件。 。 。 包括钉扎层和自由层。 位于自由层两端下方的是偏置磁体膜11b。 。 。 11b，其由施加到自由层的预定方向上的偏置磁场的永磁体和设置在自由层附近的初始化线圈31构成，并且向自由层施加具有与 通过在预定条件下通电来施加偏置磁场的电压。 此外，磁化偏置磁体膜并固定被钉扎层的磁化方向由磁场阵列形成的磁场进行，磁体阵列构造成使得多个永久磁铁布置在四方晶格的点阵点和磁体的极性 每个永久磁铁的极点与由最短路线隔开的另一相邻磁极的极性不同。

公开(公告)号：US07167345B2

公开(公告)日：2007-01-23

申请号：US10874324

申请日：2004-06-24

申请人： Toshiyuki Oohashi ,  Yukio Wakui

发明人： Toshiyuki Oohashi ,  Yukio Wakui

IPC分类号： G11B5/39

CPC分类号： G01D5/145 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3295 ,  H01F13/00 ,  H01F17/0006 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49034

摘要： A magnetic sensor provided with a magnetoresistive effect element capable of stably maintaining a direction of magnetization in a magnetic domain of a free layer. The magnetic sensor includes a magnetoresistive effect element provided with narrow zonal portions including a pinned layer and a free layer. Disposed below both ends of the free layer are bias magnet films composed of a permanent magnet that applies to the free layer a bias magnetic field in a predetermined direction and an initializing coil that is disposed in the vicinity of the free layer and applies to the free layer a magnetic field having the direction same as that of the bias magnetic field by being energized under a predetermined condition. Further, magnetizing the bias magnet films and fixing the direction of magnetization of the pinned layer are performed by a magnetic field formed by a magnet array configured such that plural permanent magnets are arranged on a lattice point of a tetragonal lattice and a polarity of a magnet pole of each permanent magnet is different from a polarity of the other adjacent magnet pole spaced by the shortest route.

摘要翻译： 磁传感器设置有能够稳定地保持自由层的磁畴中的磁化方向的磁阻效应元件。 磁传感器包括具有包括固定层和自由层的狭窄区带部分的磁阻效应元件。 在自由层的两端设置的偏置磁体膜由施加到自由层的预定方向上的偏置磁场的永磁体和设置在自由层附近的初始化线圈构成，并施加到自由层 通过在预定条件下通电来分层具有与偏置磁场相同方向的磁场。 此外，磁化偏置磁体膜并固定被钉扎层的磁化方向由磁场阵列形成的磁场进行，磁体阵列构造成使得多个永久磁铁布置在四方晶格的点阵点和磁体的极性 每个永久磁铁的极点与由最短路线隔开的另一相邻磁极的极性不同。

公开(公告)号：US07598835B2

公开(公告)日：2009-10-06

申请号：US11125100

申请日：2005-05-10

申请人： Toshiyuki Oohashi ,  Yukio Wakui

发明人： Toshiyuki Oohashi ,  Yukio Wakui

IPC分类号： H01F7/00

CPC分类号： G01D5/145 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3295 ,  H01F13/00 ,  H01F17/0006 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49034

摘要： The present invention aims to provide a magnetic sensor provided with a magnetoresistive effect element capable of stably maintaining a direction of magnetization in a magnetic domain of a free layer.The magnetic sensor includes a magnetoresistive effect element provided with narrow zonal portions 11a . . . 11a including a pinned layer and a free layer. Disposed below both ends of the free layer are bias magnet films 11b . . . 11b composed of a permanent magnet that applies to the free layer a bias magnetic field in a predetermined direction and an initializing coil 31 that is disposed in the vicinity of the free layer and applies to the free layer a magnetic field having the direction same as that of the bias magnetic field by being energized under a predetermined condition. Further, magnetizing the bias magnet films and fixing the direction of magnetization of the pinned layer are performed by a magnetic field formed by a magnet array configured such that plural permanent magnets are arranged on a lattice point of a tetragonal lattice and a polarity of a magnet pole of each permanent magnet is different from a polarity of the other adjacent magnet pole spaced by the shortest route.

摘要翻译： 本发明的目的在于提供一种具有能够稳定地保持自由层的磁畴中的磁化方向的磁阻效应元件的磁传感器。 磁传感器包括设置有窄带状部分11a的磁阻效应元件。 。 。 11a包括钉扎层和自由层。 在自由层的两端下方设置有偏置磁体膜11b。 。 。 11b，其由施加到自由层的预定方向的偏置磁场的永磁体和设置在自由层附近的初始化线圈31施加到具有与该自由层相同的方向上的自由层的磁场。 的偏置磁场通过在预定条件下通电。 此外，磁化偏置磁体膜并固定被钉扎层的磁化方向由磁场阵列形成的磁场进行，磁体阵列构造成使得多个永久磁铁布置在四方晶格的点阵点和磁体的极性 每个永久磁铁的极点与由最短路线隔开的另一相邻磁极的极性不同。

公开(公告)号：US20050212632A1

公开(公告)日：2005-09-29

申请号：US11125100

申请日：2005-05-10

申请人： Toshiyuki Oohashi ,  Yukio Wakui

发明人： Toshiyuki Oohashi ,  Yukio Wakui

IPC分类号： H01L43/06 ,  G01D5/14 ,  G01D5/16 ,  G01R33/09 ,  H01F10/32 ,  H01F13/00 ,  H01F17/00 ,  H01F41/30 ,  H01L43/08 ,  H02K41/00

CPC分类号： G01D5/145 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/324 ,  H01F10/3295 ,  H01F13/00 ,  H01F17/0006 ,  H01F41/302 ,  Y10T29/49002 ,  Y10T29/49034

摘要： The present invention aims to provide a magnetic sensor provided with a magnetoresistive effect element capable of stably maintaining a direction of magnetization in a magnetic domain of a free layer. The magnetic sensor includes a magnetoresistive effect element provided with narrow zonal portions 11a . . . 11a including a pinned layer and a free layer. Disposed below both ends of the free layer are bias magnet films 11b . . . 11b composed of a permanent magnet that applies to the free layer a bias magnetic field in a predetermined direction and an initializing coil 31 that is disposed in the vicinity of the free layer and applies to the free layer a magnetic field having the direction same as that of the bias magnetic field by being energized under a predetermined condition. Further, magnetizing the bias magnet films and fixing the direction of magnetization of the pinned layer are performed by a magnetic field formed by a magnet array configured such that plural permanent magnets are arranged on a lattice point of a tetragonal lattice and a polarity of a magnet pole of each permanent magnet is different from a polarity of the other adjacent magnet pole spaced by the shortest route.

摘要翻译： 本发明的目的在于提供一种具有能够稳定地保持自由层的磁畴中的磁化方向的磁阻效应元件的磁传感器。 磁传感器包括具有窄带状部分11a的磁阻效应元件。 。 。 包括钉扎层和自由层。 位于自由层两端下方的是偏置磁体膜11b。 。 。 11b，其由施加到自由层的预定方向的偏置磁场的永磁体和设置在自由层附近的初始化线圈31施加到具有与该自由层相同的方向上的自由层的磁场。 的偏置磁场通过在预定条件下通电。 此外，磁化偏置磁体膜并固定被钉扎层的磁化方向由磁场阵列形成的磁场进行，磁体阵列构造成使得多个永久磁铁布置在四方晶格的点阵点和磁体的极性 每个永久磁铁的极点与由最短路线隔开的另一相邻磁极的极性不同。

公开(公告)号：US20060066303A1

公开(公告)日：2006-03-30

申请号：US11236680

申请日：2005-09-28

申请人： Toshiyuki Oohashi ,  Tamito Suzuki

发明人： Toshiyuki Oohashi ,  Tamito Suzuki

IPC分类号： G01R33/02

CPC分类号： G01R33/0283

摘要： A sensor includes a first X-axis GMR element to a fourth X-axis GMR element fixed on a substrate, and a movable coil movably supported on the substrate. When electric current flows through the movable coil, a magnetic field is generated around the movable coil. The generated magnetic field is applied to the first to fourth X-axis GMR elements. The movable coil moves in accordance with acceleration generated in the sensor. The movement of the movable coil causes variation in the magnetic field applied to the first to fourth X-axis GMR element. While no electric current flows to the movable coil, the sensor measures an external magnetic field on the basis of resistances of the first to fourth X-axis GMR elements. While constant electric current flows through the movable coil, the sensor measures acceleration or the like on the basis of resistances of the first to fourth X-axis GMR elements.

摘要翻译： 传感器包括固定在基板上的第四X轴GMR元件的第一X轴GMR元件和可移动地支撑在基板上的可动线圈。 当电流流过可动线圈时，在可动线圈周围产生磁场。 所产生的磁场被施加到第一至第四X轴GMR元件。 可动线圈根据传感器中产生的加速度移动。 可动线圈的移动引起施加到第一至第四X轴GMR元件的磁场的变化。 在没有电流流向可动线圈的情况下，传感器基于第一至第四X轴GMR元件的电阻测量外部磁场。 当恒定电流流过可动线圈时，传感器基于第一至第四X轴GMR元件的电阻来测量加速度等。

公开(公告)号：US5425819A

公开(公告)日：1995-06-20

申请号：US297222

申请日：1994-08-29

申请人： Toshiyuki Oohashi ,  Naoshi Horiai ,  Makoto Shiraki

发明人： Toshiyuki Oohashi ,  Naoshi Horiai ,  Makoto Shiraki

IPC分类号： C22C5/06 ,  C22C38/00 ,  C22C38/10 ,  G11B5/39 ,  H01F10/08 ,  H01F10/16 ,  H01F10/32 ,  H01L43/10 ,  H01F1/147

CPC分类号： H01L43/10

摘要： A granule-type magnetoresistive material is used to form a MR component, which is equipped in a magnetic head, or the like. When placing the magnetoresistive material in the external magnetic field, the electric resistance is altered responsive to a variation of the external magnetic field. In order to increase a magnetic-field sensitivity, the magnetoresistive material is composed of an alloy whose atomic composition is expressed by a chemical formula of (Co.sub.1-x Fe.sub.x).sub.y Ag.sub.1-y, where 0.45.ltoreq.x.ltoreq.0.55 and 0.24.ltoreq.y.ltoreq.0.35; or another chemical formula of (Co.sub.1-x Fe.sub.x).sub.y (Ag.sub.1-z Cu.sub.z).sub.1-y, where 0.45.ltoreq.x.ltoreq.0.55, 0.24.ltoreq.y.ltoreq.0.35 and z.ltoreq.0.14.

摘要翻译： 使用颗粒型磁阻材料来形成装配在磁头等中的MR部件。 当将磁阻材料放置在外部磁场中时，响应于外部磁场的变化而改变电阻。 为了提高磁场灵敏度，磁阻材料由原子组成由化学式（Co1-xFex）yAg1-y表示的合金构成，其中0.45

公开(公告)号：USD602848S1

公开(公告)日：2009-10-27

申请号：US29281933

申请日：2007-07-06

申请人： Toshiyuki Oohashi

设计人： Toshiyuki Oohashi

公开(公告)号：US4936925A

公开(公告)日：1990-06-26

申请号：US389169

申请日：1989-08-03

申请人： Tuyuki Watanabe ,  Toshiyuki Oohashi

发明人： Tuyuki Watanabe ,  Toshiyuki Oohashi

IPC分类号： C21D8/00 ,  C22C38/00 ,  C22C38/10

CPC分类号： C21D8/005

摘要： In production of alloy for lead frames used in semiconductor integration circuits, a Fe-base alloy of a specified composition is annealed at a temperature above its recrystallization point and, thereafter, worked at 13 to 40% degree of working in order to subject the resultant elongation by thermal expansion close to those of Si, SiC and Si.sub.3 N.sub.4 over wide range of temperature.

摘要翻译： 在制造用于半导体集成电路的引线框架的合金中，将特定组成的Fe基合金在高于其再结晶点的温度下退火，然后以13-40％的加工程度进行加工，以使所得的 通过热膨胀伸长接近于Si，SiC和Si3N4在宽温度范围内。

公开(公告)号：US07443158B2

公开(公告)日：2008-10-28

申请号：US11236680

申请日：2005-09-28

申请人： Toshiyuki Oohashi ,  Tamito Suzuki

发明人： Toshiyuki Oohashi ,  Tamito Suzuki

IPC分类号： G01B7/14 ,  G01R33/00 ,  G01P15/105

CPC分类号： G01R33/0283

摘要： A sensor includes a first X-axis GMR element to a fourth X-axis GMR element fixed on a substrate, and a movable coil movably supported on the substrate. When electric current flows through the movable coil, a magnetic field is generated around the movable coil. The generated magnetic field is applied to the first to fourth X-axis GMR elements. The movable coil moves in accordance with acceleration generated in the sensor. The movement of the movable coil causes variation in the magnetic field applied to the first to fourth X-axis GMR element. While no electric current flows to the movable coil, the sensor measures an external magnetic field on the basis of resistances of the first to fourth X-axis GMR elements. While constant electric current flows through the movable coil, the sensor measures acceleration or the like on the basis of resistances of the first to fourth X-axis GMR elements.

摘要翻译： 传感器包括固定在基板上的第四X轴GMR元件的第一X轴GMR元件和可移动地支撑在基板上的可动线圈。 当电流流过可动线圈时，在可动线圈周围产生磁场。 所产生的磁场被施加到第一至第四X轴GMR元件。 可动线圈根据传感器中产生的加速度移动。 可动线圈的移动引起施加到第一至第四X轴GMR元件的磁场的变化。 在没有电流流向可动线圈的情况下，传感器基于第一至第四X轴GMR元件的电阻测量外部磁场。 当恒定电流流过可动线圈时，传感器基于第一至第四X轴GMR元件的电阻来测量加速度等。