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    METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS
    11.
    发明申请
    METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS 审中-公开
    制造磁阻效应元件，磁头组件和磁记录和再现装置的方法

    公开(公告)号：US20110205669A1

    公开(公告)日：2011-08-25

    申请号：US12881879

    申请日：2010-09-14

    申请人： Shuichi Murakami ,  Hiromi Yuasa ,  Michiko Hara ,  Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Kunliang Zhang ,  Min Li

    发明人： Shuichi Murakami ,  Hiromi Yuasa ,  Michiko Hara ,  Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Kunliang Zhang ,  Min Li

    IPC分类号： G11B5/48 ,  B05D3/06 ,  B05D1/36

    CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  G11B5/3983 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

    摘要： According to one embodiment, a method for manufacturing a magneto-resistance effect element is disclosed. The element has first and second magnetic layers, and an intermediate layer provided between the first and second magnetic layers. The intermediate layer has an insulating layer and a conductive portion penetrating through the insulating layer. The method can include forming a structure body having the insulating layer and the conductive portion, performing a first treatment including irradiating the structure body with at least one of ion including at least one selected from the group consisting of argon, xenon, helium, neon and krypton and a plasma including at least one selected from the group, and performing a second treatment including at least one of exposure to gas containing oxygen or nitrogen, irradiation of ion beam containing oxygen or nitrogen, irradiation of plasma containing oxygen or nitrogen, to the structure body submitted to the first treatment.

    摘要翻译： 根据一个实施例，公开了一种用于制造磁阻效应元件的方法。 元件具有第一和第二磁性层，以及设置在第一和第二磁性层之间的中间层。 中间层具有绝缘层和穿透绝缘层的导电部分。 该方法可以包括形成具有绝缘层和导电部分的结构体，进行第一处理，包括用包含从氩，氙，氦，氖和氖中选出的至少一种的离子中的至少一种照射结构体的第一处理和 氪气和包括选自该组中的至少一种的等离子体，并且执行包括暴露于含氧或氮气的气体中的至少一种的照射，含有氧或氮的离子束的照射，含有氧或氮的等离子体的照射， 结构体提交第一次治疗。

    Magnetoresistive element, magnetic head assembly, magnetic recording/reproducing apparatus, memory cell array, and manufacturing method of magnetoresistive element
    14.
    发明授权
    Magnetoresistive element, magnetic head assembly, magnetic recording/reproducing apparatus, memory cell array, and manufacturing method of magnetoresistive element 有权
    磁阻元件，磁头组件，磁记录/再现装置，存储单元阵列和磁阻元件的制造方法

    公开(公告)号：US08213130B1

    公开(公告)日：2012-07-03

    申请号：US13234356

    申请日：2011-09-16

    申请人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

    发明人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3983 ,  G11B2005/3996 ,  G11C11/161

    摘要： A magnetoresistive element includes a first electrode, a second electrode, a first magnetic layer, a second magnetic layer, a spacer layer, an oxide layer, and a metal layer. The oxide layer is provided between the first electrode and the first magnetic layer, or within the first magnetic layer, or between the first magnetic layer and the spacer layer, or within the spacer layer, or between the spacer layer and the second magnetic layer, or within the second magnetic layer, or between the second magnetic layer and the second electrode. The oxide layer includes at least one element of Zn, In, Sn, and Cd, and at least one element of Fe, Co, and Ni. The metal layer includes at least one element of Zn, In, Sn, and Cd by not less than 5 at % and not more than 80 at %, and at least one element of Fe, Co, and Ni.

    摘要翻译： 磁阻元件包括第一电极，第二电极，第一磁性层，第二磁性层，间隔层，氧化物层和金属层。 氧化物层设置在第一电极和第一磁性层之间，或在第一磁性层内，或第一磁性层与间隔层之间，或间隔层内，或间隔层与第二磁性层之间， 或在第二磁性层内，或在第二磁性层和第二电极之间。 氧化物层包括Zn，In，Sn和Cd中的至少一种元素，以及Fe，Co和Ni中的至少一种元素。 金属层包括Zn，In，Sn和Cd中的至少一种元素，不小于5原子％且不大于80原子％，以及至少一种Fe，Co和Ni元素。

    METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
    15.
    发明申请
    METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT 失效
    制造磁性元件的方法

    公开(公告)号：US20120050920A1

    公开(公告)日：2012-03-01

    申请号：US13186389

    申请日：2011-07-19

    申请人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    发明人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    IPC分类号： H01F1/04 ,  G11B5/48

    CPC分类号： G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

    摘要： According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

    摘要翻译： 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。

    MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS
    18.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS 审中-公开
    磁电元件和磁记录装置

    公开(公告)号：US20110261478A1

    公开(公告)日：2011-10-27

    申请号：US13092044

    申请日：2011-04-21

    申请人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    发明人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    IPC分类号： G11B5/02 ,  G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01F41/325 ,  H01L43/08 ,  Y10T428/1114

    摘要： According to one embodiment, a magnetoresistive element includes a stack and a pair of electrodes that allows electric current to flow through the stack in a direction perpendicular to a surface of the stack. The stack includes a cap layer, a magnetization pinned layer, a magnetization free layer provided between the cap layer and the magnetization pinned layer, a tunneling insulator provided between the magnetization pinned layer and the magnetization free layer, and a functional layer provided within the magnetization pinned layer, between the magnetization pinned layer and the tunneling insulator, between the tunneling insulator and the magnetization free layer, within the magnetization free layer, or between the magnetization free layer and the cap layer. The functional layer includes an oxide including at least one element selected from Zn, In, Sn and Cd and at least one element selected from Fe, Co and Ni.

    摘要翻译： 根据一个实施例，磁阻元件包括堆叠和​​一对电极，其允许电流沿垂直于堆叠表面的方向流过堆叠。 堆叠包括盖层，磁化钉扎层，设置在盖层和磁化钉扎层之间的无磁化层，设置在磁化钉扎层和磁化自由层之间的隧道绝缘体，以及设置在磁化层中的功能层 在磁化固定层和隧道绝缘体之间，在隧道绝缘体和磁化自由层之间，在磁化自由层内，或在磁化自由层和覆盖层之间。 功能层包括包含选自Zn，In，Sn和Cd中的至少一种元素的氧化物和选自Fe，Co和Ni中的至少一种元素。

    Magnetoresistive element and method of manufacturing the same
    20.
    发明授权
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US08184408B2

    公开(公告)日：2012-05-22

    申请号：US12320668

    申请日：2009-01-30

    申请人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.

    摘要翻译： 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 由含氧或含氮材料形成并布置在磁化固定层中或在无磁化层中的功能层和一对电极，其垂直于磁阻膜的平面通过电流，其中晶体 功能层的取向平面不同于其上部或下部相邻层的结晶取向平面。