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    METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS
    5.
    发明申请
    METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS 审中-公开
    制造磁阻效应元件，磁头组件和磁记录和再现装置的方法

    公开(公告)号：US20110205669A1

    公开(公告)日：2011-08-25

    申请号：US12881879

    申请日：2010-09-14

    申请人： Shuichi Murakami ,  Hiromi Yuasa ,  Michiko Hara ,  Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Kunliang Zhang ,  Min Li

    发明人： Shuichi Murakami ,  Hiromi Yuasa ,  Michiko Hara ,  Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Kunliang Zhang ,  Min Li

    IPC分类号： G11B5/48 ,  B05D3/06 ,  B05D1/36

    CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  G11B5/3983 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

    摘要： According to one embodiment, a method for manufacturing a magneto-resistance effect element is disclosed. The element has first and second magnetic layers, and an intermediate layer provided between the first and second magnetic layers. The intermediate layer has an insulating layer and a conductive portion penetrating through the insulating layer. The method can include forming a structure body having the insulating layer and the conductive portion, performing a first treatment including irradiating the structure body with at least one of ion including at least one selected from the group consisting of argon, xenon, helium, neon and krypton and a plasma including at least one selected from the group, and performing a second treatment including at least one of exposure to gas containing oxygen or nitrogen, irradiation of ion beam containing oxygen or nitrogen, irradiation of plasma containing oxygen or nitrogen, to the structure body submitted to the first treatment.

    摘要翻译： 根据一个实施例，公开了一种用于制造磁阻效应元件的方法。 元件具有第一和第二磁性层，以及设置在第一和第二磁性层之间的中间层。 中间层具有绝缘层和穿透绝缘层的导电部分。 该方法可以包括形成具有绝缘层和导电部分的结构体，进行第一处理，包括用包含从氩，氙，氦，氖和氖中选出的至少一种的离子中的至少一种照射结构体的第一处理和 氪气和包括选自该组中的至少一种的等离子体，并且执行包括暴露于含氧或氮气的气体中的至少一种的照射，含有氧或氮的离子束的照射，含有氧或氮的等离子体的照射， 结构体提交第一次治疗。

    Magneto-resistance effect element, and method for manufacturing the same
    8.
    发明授权
    Magneto-resistance effect element, and method for manufacturing the same 有权
    磁阻效应元件及其制造方法

    公开(公告)号：US08379351B2

    公开(公告)日：2013-02-19

    申请号：US12073895

    申请日：2008-03-11

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

    摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

    摘要翻译： 一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。 薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个 的固定磁化层，自由磁化层和薄膜层。

    BLOOD-PRESSURE SENSOR
    9.
    发明申请
    BLOOD-PRESSURE SENSOR 审中-公开
    血压传感器

    公开(公告)号：US20110295128A1

    公开(公告)日：2011-12-01

    申请号：US13045759

    申请日：2011-03-11

    申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Alexander Devin Giddings ,  Michiko Hara ,  Shuichi Murakami

    发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Alexander Devin Giddings ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： A61B5/021

    CPC分类号： A61B5/02141 ,  A61B5/0004 ,  A61B5/021 ,  A61B5/6824 ,  A61B5/6833 ,  A61B2560/0214 ,  A61B2562/028 ,  G01L9/16 ,  G01L19/06 ,  G01L19/069

    摘要： A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.

    摘要翻译： 血压传感器包括基板，第一电极，磁化固定层，非磁性层，磁化自由层和第二电极。 弯曲基板至少在第一方向上产生拉伸应力。 第一电极设置在基板上。 磁化固定层具有在第二方向上固定的磁化，并且设置在基板上。 非磁性层设置在磁化固定层上。 磁化自由层具有不同于第一方向和与第一方向垂直的方向的磁化方向。 第二电极设置在无磁化层上。

    Method of manufacturing magnetoresistive element
    10.
    发明授权
    Method of manufacturing magnetoresistive element 失效
    制造磁阻元件的方法

    公开(公告)号：US08685491B2

    公开(公告)日：2014-04-01

    申请号：US13186389

    申请日：2011-07-19

    申请人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    发明人： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

    IPC分类号： G11B5/48

    CPC分类号： G11B5/3903 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/303 ,  H01F41/325 ,  H01L43/12 ,  Y10T428/1129

    摘要： According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

    摘要翻译： 根据一个实施例，制造磁阻元件的方法包括层状结构和一对电极，所述层叠结构包括盖层，磁化固定层，磁化自由层，间隔层和功能层 在磁化被钉扎层和间隔层之间，在间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间并包括氧化物的磁化钉扎层，该方法包括形成 膜，其包括功能层的基材，使用含有选自分子，离子，等离子体和自由基中的至少一种形式的含氧气体，对膜进行氧化处理，并使用 在氧化处理后还原气膜。