-
公开(公告)号：US07301420B2
公开(公告)日：2007-11-27
申请号：US10543837
申请日：2004-11-19
CPC分类号： H03H9/605 , H03H9/6483
摘要： A piezoelectric resonator filter for allowing a high-frequency signal in a desired frequency band to pass therethrough. The piezoelectric resonator filter presents a low insertion loss while securing satisfactory characteristics in a stop band. The piezoelectric resonator includes two or more reactance elements in serial connection between input and output terminals, at least three or more piezoelectric resonators in parallel connection between the input and output terminals, and an inductor having a grounded end. The reactive elements and resonators of the piezoelectric resonator are arranged in a ladder connection. Among the three or more piezoelectric resonators, only those piezoelectric resonators which do not adjoin each other are connected in common to the inductor.
摘要翻译： 一种用于允许期望频带中的高频信号通过的压电谐振器滤波器。 压电谐振器滤波器具有低插入损耗，同时在阻带中确保令人满意的特性。 压电谐振器包括在输入和输出端子之间串联连接的两个或更多个电抗元件，在输入和输出端子之间并联连接的至少三个或更多个压电谐振器和具有接地端的电感器。 压电谐振器的电抗元件和谐振器被布置在梯形连接中。 在三个或更多个压电谐振器中，只有那些彼此不相邻的压电谐振器共同地连接到电感器。
-
12.发明授权Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor 有权压电器件，天线双工器以及用于此的压电谐振器的制造方法公开(公告)号：US07242130B2
公开(公告)日：2007-07-10
申请号：US10979276
申请日：2004-11-03
CPC分类号： H03H9/605 , H03H3/02 , H03H9/02118 , H03H9/587
摘要： A piezoelectric device of the present invention includes first and second piezoelectric resonators. The first piezoelectric resonator has a structure in which a cavity, a lower electrode, a piezoelectric layer, and an upper electrode are formed on a substrate. The second piezoelectric resonator has a structure in which a cavity, a lower electrode, a piezoelectric layer, and an upper electrode are formed on the substrate. A feature of the above-structure piezoelectric device is that the piezoelectric layers, have the same film thickness, and the depth of the cavity of the first piezoelectric resonator is different from the depth of the cavity of the second piezoelectric resonator.
摘要翻译： 本发明的压电装置包括第一和第二压电谐振器。 第一压电谐振器具有在基板上形成空腔，下电极，压电层和上电极的结构。 第二压电谐振器具有在基板上形成空腔，下电极，压电层和上电极的结构。 上述结构的压电装置的特征在于，压电层具有相同的膜厚度，并且第一压电谐振器的空腔的深度与第二压电谐振器的腔的深度不同。
-
13.发明申请Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor 有权压电器件，天线双工器以及用于此的压电谐振器的制造方法公开(公告)号：US20050099092A1
公开(公告)日：2005-05-12
申请号：US10979276
申请日：2004-11-03
CPC分类号： H03H9/605 , H03H3/02 , H03H9/02118 , H03H9/587
摘要： A piezoelectric device 100 includes first and second piezoeletric resonators 110, 120. The first piezoeletric resonator 110 has a structure in which a cavity 111, a lower electrode 112, a piezoeletric layer 113, and an upper electrode 114 are formed on a substrate 101. The second piezoeletric resonator 120 has a structure in which a cavity 121, a lower electrode 122, a piezoeletric layer 123, and an upper electrode 124 are formed on the substrate 110. A feature of the above-structure piezoelectric device 100 is that the piezoeletric layers 113, 123 have the same film thickness and the depth t1 of the cavity 111 of the first piezoeletric resonator 110 is different from the depth t2 of the cavity 121 of the second piezoeletric resonator 120.
摘要翻译： 压电装置100包括第一和第二压电谐振器110,120。 第一压电谐振器110具有其中在基板101上形成空腔111，下电极112，压电层113和上电极114的结构。 第二压电谐振器120具有其中在基板110上形成空腔121，下电极122，压电层123和上电极124的结构。 上述结构的压电装置100的特征在于，压电层113,123具有相同的膜厚度，并且第一压电谐振器110的空腔111的深度t 1与腔体121的深度t 2不同 第二压电谐振器120。
-
公开(公告)号：US07259498B2
公开(公告)日：2007-08-21
申请号：US10938537
申请日：2004-09-13
CPC分类号： H03H9/588 , H03H9/02094 , H03H9/02102 , H03H9/0211 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/585 , H03H9/589
摘要： A piezoelectric resonator of the present invention is structured such that on a substrate 5 having a cavity 4 formed therein, a lower electrode 3, a piezoelectric body 1, a spurious component control layer 16, and an upper electrode 2 are formed in this order from bottom up. The spurious component control layer 16 is a layer for controlling a spurious frequency, and composed of, for example, a metallic material, a dielectric material, or a piezo electric material. By additionally providing the spurious component control layer 16, it is made possible to cause variation of the spurious frequency due to unwanted variation to become greater than variation in resonance frequency of the main resonance of the piezoelectric resonator. Thus, it is possible to realize a piezoelectric resonator having an admittance frequency response where no spurious component occurs between resonance frequency fr and antiresonance frequency fa.
摘要翻译： 本发明的压电谐振器被构造成使得在其中形成有空腔4的基板5上形成下电极3，压电体1，杂散分量控制层16和上电极2，从而 自下而上。 杂散分量控制层16是用于控制寄生频率的层，例如由金属材料，电介质材料或压电材料构成。 通过附加地提供寄生分量控制层16，可以使由于不期望的变化引起的寄生频率的变化变得大于压电谐振器的主谐振的谐振频率的变化。 因此，可以实现在谐振频率fr和反谐振频率fa之间不产生杂散分量的导纳频率响应的压电谐振器。
-
15.发明授权Thin film bulk acoustic resonator, method for producing the same, filter, composite electronic component device, and communication device 失效薄膜体声波谐振器，其制造方法，滤波器，复合电子部件装置以及通信装置公开(公告)号：US07230511B2
公开(公告)日：2007-06-12
申请号：US10935160
申请日：2004-09-08
CPC分类号： H03H9/564 , H03H3/02 , H03H9/02118 , H03H9/171 , H03H9/568
摘要： A thin film bulk acoustic resonator includes a piezoelectric film, and a pair of electrodes between which the piezoelectric film is interposed. The piezoelectric film includes an outer region extending outwards from at least a portion of the periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film. The outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves.
摘要翻译： 薄膜体声波谐振器包括压电薄膜和介于其间的一对电极。 压电膜包括从由一对电极和压电膜组成的谐振器部分的周边的至少一部分向外延伸的外部区域。 外部区域在其至少一部分中包括用于阻尼声波的声阻尼区域。
-
16.发明申请Thin film bulk acoustic resonator, method for producing the same, filter, composite electronic component device, and communication device 失效薄膜体声波谐振器，其制造方法，滤波器，复合电子部件装置以及通信装置公开(公告)号：US20050057324A1
公开(公告)日：2005-03-17
申请号：US10935160
申请日：2004-09-08
CPC分类号： H03H9/564 , H03H3/02 , H03H9/02118 , H03H9/171 , H03H9/568
摘要： A thin film bulk acoustic resonator includes a piezoelectric film, and a pair of electrodes between which the piezoelectric film is interposed. The piezoelectric film includes an outer region extending outwards from at least a portion of the periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film. The outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves.
摘要翻译： 薄膜体声波谐振器包括压电薄膜和介于其间的一对电极。 压电膜包括从由一对电极和压电膜组成的谐振器部分的周边的至少一部分向外延伸的外部区域。 外部区域在其至少一部分中包括用于阻尼声波的声阻尼区域。
-
17.再颁专利Piezoelectric resonator having a spurious component control layer, filter using the piezoelectric resonator, and duplexer using the piezoelectric resonator 失效具有杂散分量控制层的压电谐振器，使用压电谐振器的滤波器，以及使用压电谐振器的双工器公开(公告)号：USRE42009E1
公开(公告)日：2010-12-28
申请号：US12068675
申请日：2008-02-08
CPC分类号： H03H9/588 , H03H9/02094 , H03H9/02102 , H03H9/0211 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/585 , H03H9/589
摘要： A piezoelectric resonator of the present invention is structured such that on a substrate 5 having a cavity 4 formed therein, a lower electrode 3, a piezoelectric body 1, a spurious component control layer 16, and an upper electrode 2 are formed in this order from bottom up. The spurious component control layer 16 is a layer for controlling a spurious frequency, and composed of, for example, a metallic material, a dielectric material, or a piezo electric material. By additionally providing the spurious component control layer 16, it is made possible to cause variation of the spurious frequency due to unwanted variation to become greater than variation in resonance frequency of the main resonance of the piezoelectric resonator. Thus, it is possible to realize a piezoelectric resonator having an admittance frequency response where no spurious component occurs between resonance frequency fr and antiresonance frequency fa.
摘要翻译： 本发明的压电谐振器被构造成使得在其中形成有空腔4的基板5上形成下电极3，压电体1，杂散分量控制层16和上电极2，从而 自下而上。 杂散分量控制层16是用于控制寄生频率的层，例如由金属材料，电介质材料或压电材料构成。 通过附加地提供寄生分量控制层16，可以使由于不期望的变化引起的寄生频率的变化变得大于压电谐振器的主谐振的谐振频率的变化。 因此，可以实现在谐振频率fr和反谐振频率fa之间不产生杂散分量的导纳频率响应的压电谐振器。
-
公开(公告)号：US20050057117A1
公开(公告)日：2005-03-17
申请号：US10938537
申请日：2004-09-13
CPC分类号： H03H9/588 , H03H9/02094 , H03H9/02102 , H03H9/0211 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/585 , H03H9/589
摘要： A piezoelectric resonator of the present invention is structured such that on a substrate 5 having a cavity 4 formed therein, a lower electrode 3, a piezoelectric body 1, a spurious component control layer 16, and an upper electrode 2 are formed in this order from bottom up. The spurious component control layer 16 is a layer for controlling a spurious frequency, and composed of, for example, a metallic material, a dielectric material, or a piezo electric material. By additionally providing the spurious component control layer 16, it is made possible to cause variation of the spurious frequency due to unwanted variation to become greater than variation in resonance frequency of the main resonance of the piezoelectric resonator. Thus, it is possible to realize a piezoelectric resonator having an admittance frequency response where no spurious component occurs between resonance frequency fr and antiresonance frequency fa.
摘要翻译： 本发明的压电谐振器被构造成使得在其中形成有空腔4的基板5上形成下电极3，压电体1，杂散分量控制层16和上电极2，从而 自下而上。 杂散分量控制层16是用于控制寄生频率的层，例如由金属材料，电介质材料或压电材料构成。 通过附加地提供寄生分量控制层16，可以使由于不期望的变化引起的寄生频率的变化变得大于压电谐振器的主谐振的谐振频率的变化。 因此，可以实现在谐振频率fr和反谐振频率fa之间不产生杂散分量的导纳频率响应的压电谐振器。
-
公开(公告)号：US08289103B2
公开(公告)日：2012-10-16
申请号：US12515636
申请日：2007-11-19
IPC分类号： H03H7/00
CPC分类号： H03H7/0153 , H03H7/0115 , H03H7/1708 , H03H7/1725 , H03H7/1733 , H03H7/1758 , H03H2007/013 , H03H2210/012
摘要： A high frequency filter includes an inductor, a serial resonance circuit including an inductor and capacitors, a serial resonance circuit including an inductor and capacitors, and a varactor diode connected between a connection point between the capacitor and the capacitor and a connection point between the capacitor and the capacitor. A controller simultaneously changes two attenuation pole frequencies of the filter device by changing a capacitance of the varactor diode.
摘要翻译： 高频滤波器包括电感器，包括电感器和电容器的串联谐振电路，包括电感器和电容器的串联谐振电路以及连接在电容器和电容器之间的连接点之间的变容二极管和电容器之间的连接点 和电容器。 控制器通过改变变容二极管的电容同时改变滤波器装置的两个衰减极点频率。
-
20.发明申请公开(公告)号：US20090133237A1
公开(公告)日：2009-05-28
申请号：US12338189
申请日：2008-12-18
IPC分类号： H01L41/24
CPC分类号： H03H9/132 , H03H3/02 , H03H9/0514 , H03H9/13 , H03H9/172 , H03H9/175 , H03H2003/025 , Y10T29/42
摘要： A piezoelectric resonator comprises a piezoelectric material layer 101, a first electrode 102 formed on one major surface of the piezoelectric material layer 101, and having a cross-section in the shape of a trapezoid whose longer side contacts the piezoelectric material layer 101, and a second electrode 103 formed on the other major surface of the piezoelectric material layer 101, and having a cross-section in the shape of a trapezoid whose longer side contacts the piezoelectric material layer 101.
摘要翻译： 压电谐振器包括压电材料层101，形成在压电材料层101的一个主表面上的第一电极102，并且具有长边接触压电材料层101的梯形形状的横截面，以及 第二电极103形成在压电材料层101的另一个主表面上，并且具有长边与压电材料层101接触的梯形形状的横截面。
-
-
-
-
-
-
-
-
-
搜索结果
57 条记录 (耗时 0.029 秒)
