摘要:
An exposure control system includes a pulsed light source; a photoelectric converting device for receiving a portion of pulsed light from the pulsed light source and for producing a photoelectric signal; an integration gate producing device for producing an integration gate signal after a predetermined specified time from the production of an emission synchronization signal related to the pulsed light source, wherein the specified time is set to be not greater than a delay time from the production of the emission synchronization signal to the start of actual emission of the pulsed light source; and integrating device for integrating the photoelectric signal from the photoelectric converting device during a time period in which the integration gate producing device produces the integration gate signal; and a control device for integrating a resultant of the integration by the integrating device each time one pulse light is emitted, the control device discriminating whether the result of integration is less than a predetermined or not, each time one pulse light is emitted, and the control device stopping the emission of the pulsed light when the result of integration becomes not less than the predetermined.
摘要:
A charged-particle beam exposure apparatus for exposing a member to be exposed to a charged particle beam with a pattern includes memories (902-905) for storing a plurality of control data for controlling reference dose data of the charged particle beam in accordance with the incident position of the charged particle beam on the member to be exposed, a selector (907) for selecting any one of the plurality of control data stored in the memories, and an exposure unit for controlling the reference dose data of the charged particle beam for each irradiation position on the basis of the control data selected by the selector, thereby exposing the member to be exposed with the pattern. The charged-particle beam exposure apparatus rapidly performs proper proximity effect correction to expose the member to be exposed with the pattern.
摘要:
In an exposure method of drawing and exposing a second pattern with a scanner so as to match a first pattern formed on a sample upon exposure with a reduction projection exposure apparatus, a matrix is set on the sample. A distortion correction map representing an offset of a point corresponding to each matrix point on the first pattern from an ideal position is formed. The blocks of the matrix, small for a large offset and large for a small offset, are set when drawing the second pattern while correcting drawing information of the second pattern on the basis of offset information represented by the correction map. The block size of the distortion correction map is not uniformly reduced. A small block size is set for a large distortion, and a large block size is set for a small distortion, thereby reducing the data amount. A necessary and sufficient block size is set for distortion correction to minimize the number of times of arithmetic operation for correction processing without increasing the memory size, thereby achieving high-speed processing.
摘要:
An exposure apparatus includes a pulsed light source for repeatedly emitting a pulsed light; a photoelectric converting device for receiving at least a portion of the pulsed light from the pulsed light source; and a control device for controlling the emission of the pulsed light source, on the basis of a value related to a difference between a photoelectric signal produced from the photoelectric converting device at the time of emission of the pulsed light and an offset signal produced from the photoelectric converting device at the time of non-emission of the pulsed light.
摘要:
A charged particle beam exposure system which draws a pattern on an object to be exposed by a plurality of charged particle beams emitted from a plurality of element electron optical systems includes (a) a storage device storing (i) a standard dose data for controlling the irradiation of charged particle beams to an object to be exposed, (ii) plural pieces of proximity effect correction data for correcting the irradiation of the charged particle beams for each incidence position with respect to the object to be exposed, in order to reduce the influence of a proximity effect, and (iii) calibration data for correcting variations in the irradiation dose among the plurality of the charged particle beams emitted from the plurality of element electron optical systems, and (b) a controller for controlling the irradiation of each of the charged particle beams, based on the standard dose data, the proximity effect correction data, and the calibration data.
摘要:
An exposure apparatus for drawing a pattern on a wafer using an electron beam includes a plurality of driving elements for drawing the pattern on the wafer while scanning the wafer with a charged-particle beam, a plurality of driving data memories for storing a plurality of time-series driving data strings for driving the plurality of driving elements, each driving data memory sequentially supplying data forming the time-series driving data string from the first data to a corresponding driving element in accordance with an operation command, and a clock pattern memory for storing a plurality of operation command data strings obtained by aligning operation commands and non-operation commands in time-series, the operation commands and the non-operation commands constituting each operation command data string being sequentially supplied from the first operation command data to a corresponding driving data memory in accordance with a drawing sync clock supplied to the clock pattern memory.
摘要:
An electron gun according to this invention includes a cathode having a hemispherical electron-emitting surface, an anode which is arranged to face the cathode, and has a first aperture on the optical axis, and a bias electrode which is arranged between the anode and the cathode, receives a potential lower than one applied to the cathode, and has a second aperture larger than the electron-emitting surface of the cathode on the optical axis. The distal end of the electron-emitting surface of the cathode is arranged in contact with or outside a sphere whose diameter is equal to the diameter of the second aperture of the bias electrode.
摘要:
A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).
摘要:
An element exposure field (EF) having a size falling within a range where aberration by an electron optical system is suppressed to a predetermined amount or less is divided into a plurality of partial fields (PF), and a pattern is drawn on a substrate with an electron beam on the basis of exposure information in which charged-particle beam dosages for the plurality of partial fields are set. Each partial field (PF) is continuously scanned and exposed with a corresponding dosage contained in the exposure information. Scan/exposure for each partial field (PF) is sequentially executed for all the partial fields (PF) in the element exposure field (EF).
摘要:
A control system is provided for a charged particle exposure apparatus. A plurality of dot control data are concatenated and compressed to generate compressed concatenated control data. A plurality of compressed concatenated control data are arranged to generate exposure control data. An electron beam exposure apparatus expands the exposure control data to reconstruct the plurality of dot control data, and performs exposure while controlling blankers on the basis of the reconstructed dot control data.