Exposure control system
    11.
    发明授权
    Exposure control system 失效
    曝光控制系统

    公开(公告)号:US5107275A

    公开(公告)日:1992-04-21

    申请号:US611442

    申请日:1990-11-13

    IPC分类号: G03F7/20 H01L21/30 H04N1/036

    CPC分类号: H04N1/036

    摘要: An exposure control system includes a pulsed light source; a photoelectric converting device for receiving a portion of pulsed light from the pulsed light source and for producing a photoelectric signal; an integration gate producing device for producing an integration gate signal after a predetermined specified time from the production of an emission synchronization signal related to the pulsed light source, wherein the specified time is set to be not greater than a delay time from the production of the emission synchronization signal to the start of actual emission of the pulsed light source; and integrating device for integrating the photoelectric signal from the photoelectric converting device during a time period in which the integration gate producing device produces the integration gate signal; and a control device for integrating a resultant of the integration by the integrating device each time one pulse light is emitted, the control device discriminating whether the result of integration is less than a predetermined or not, each time one pulse light is emitted, and the control device stopping the emission of the pulsed light when the result of integration becomes not less than the predetermined.

    摘要翻译: 曝光控制系统包括脉冲光源; 用于接收来自所述脉冲光源的脉冲光的一部分并用于产生光电信号的光电转换装置; 一个积分栅极产生装置,用于在从产生与脉冲光源相关的发射同步信号的预定特定时间之后产生积分门信号,其中指定时间被​​设定为不大于从生成 发射同步信号到脉冲光源的实际发射开始; 以及用于在积分栅极产生装置产生积分门信号的时间段期间积分来自光电转换装置的光电信号的积分装置; 以及控制装置,用于在每次发射一个脉冲光时对积分装置进行积分的结果进行积分,每当发出一个脉冲光时,控制装置判别积分结果是否小于预定的结果,并且, 当积分的结果变得不小于预定值时,控制装置停止脉冲光的发射。

    Charged-particle beam exposure apparatus, charged-particle beam exposure method, control data determination method, and device manufacturing method using this method
    12.
    发明授权
    Charged-particle beam exposure apparatus, charged-particle beam exposure method, control data determination method, and device manufacturing method using this method 失效
    带电粒子束曝光装置,带电粒子束曝光方法,控制数据确定方法和使用该方法的装置制造方法

    公开(公告)号:US06903352B2

    公开(公告)日:2005-06-07

    申请号:US09733980

    申请日:2000-12-12

    摘要: A charged-particle beam exposure apparatus for exposing a member to be exposed to a charged particle beam with a pattern includes memories (902-905) for storing a plurality of control data for controlling reference dose data of the charged particle beam in accordance with the incident position of the charged particle beam on the member to be exposed, a selector (907) for selecting any one of the plurality of control data stored in the memories, and an exposure unit for controlling the reference dose data of the charged particle beam for each irradiation position on the basis of the control data selected by the selector, thereby exposing the member to be exposed with the pattern. The charged-particle beam exposure apparatus rapidly performs proper proximity effect correction to expose the member to be exposed with the pattern.

    摘要翻译: 用于使被暴露于带电粒子束的构件暴露于图案的带电粒子束曝光装置包括用于存储多个用于控制带电粒子束的参考剂量数据的控制数据的存储器(902-905) 带电粒子束在要曝光的构件上的入射位置,用于选择存储在存储器中的多个控制数据中的任何一个的选择器(907),以及用于控制带电粒子束的参考剂量数据的曝光单元 基于由选择器选择的控制数据的每个照射位置,从而使该图案曝光的构件露出。 带电粒子束曝光装置快速进行适当的邻近效应校正,以暴露出具有图案的待暴露部件。

    Exposure method and device manufacturing method using this exposure method
    13.
    发明授权
    Exposure method and device manufacturing method using this exposure method 失效
    使用这种曝光方法的曝光方法和装置制造方法

    公开(公告)号:US06741732B2

    公开(公告)日:2004-05-25

    申请号:US09166595

    申请日:1998-10-06

    申请人: Yoshikiyo Yui

    发明人: Yoshikiyo Yui

    IPC分类号: G06K903

    摘要: In an exposure method of drawing and exposing a second pattern with a scanner so as to match a first pattern formed on a sample upon exposure with a reduction projection exposure apparatus, a matrix is set on the sample. A distortion correction map representing an offset of a point corresponding to each matrix point on the first pattern from an ideal position is formed. The blocks of the matrix, small for a large offset and large for a small offset, are set when drawing the second pattern while correcting drawing information of the second pattern on the basis of offset information represented by the correction map. The block size of the distortion correction map is not uniformly reduced. A small block size is set for a large distortion, and a large block size is set for a small distortion, thereby reducing the data amount. A necessary and sufficient block size is set for distortion correction to minimize the number of times of arithmetic operation for correction processing without increasing the memory size, thereby achieving high-speed processing.

    摘要翻译: 在利用扫描仪进行绘制和曝光第二图案的曝光方法中,以便在利用还原投影曝光装置进行曝光时使形成在样品上的第一图案相匹配,在样本上设置矩阵。 形成表示与理想位置对应于第一图案上的每个矩阵点的点的偏移的失真校正图。 基于由校正图表示的偏移信息,在修正第二图案的绘图信息的同时,在绘制第二图案时,设定矩阵的块大,偏移量大,小偏移大的块。 失真校正图的块大小不能均匀地减小。 设置小的块大小以实现大的失真,并且对于小的失真设置大的块大小,从而减少数据量。 设置必要且足够的块大小用于失真校正,以最小化用于校正处理的算术运算次数,而不增加存储器大小,从而实现高速处理。

    Exposure control method and apparatus compensating for detection of
offset from a measured value
    14.
    发明授权
    Exposure control method and apparatus compensating for detection of offset from a measured value 失效
    曝光控制方法和装置补偿从测量值的偏移检测

    公开(公告)号:US5053614A

    公开(公告)日:1991-10-01

    申请号:US596401

    申请日:1990-10-02

    摘要: An exposure apparatus includes a pulsed light source for repeatedly emitting a pulsed light; a photoelectric converting device for receiving at least a portion of the pulsed light from the pulsed light source; and a control device for controlling the emission of the pulsed light source, on the basis of a value related to a difference between a photoelectric signal produced from the photoelectric converting device at the time of emission of the pulsed light and an offset signal produced from the photoelectric converting device at the time of non-emission of the pulsed light.

    摘要翻译: 曝光装置包括用于反复发射脉冲光的脉冲光源; 用于接收来自脉冲光源的脉冲光的至少一部分的光电转换装置; 以及用于控制脉冲光源的发射的控制装置,其基于与在发射脉冲光时从光电转换装置产生的光电信号和由该光电转换装置发射的偏移信号之间的差异相关的值 在不发射脉冲光时光电转换装置。

    Correcting method for correcting exposure data used for a charged particle beam exposure system
    15.
    发明授权
    Correcting method for correcting exposure data used for a charged particle beam exposure system 失效
    用于校正用于带电粒子束曝光系统的曝光数据的校正方法

    公开(公告)号:US06835937B1

    公开(公告)日:2004-12-28

    申请号:US09708590

    申请日:2000-11-09

    IPC分类号: G01T100

    摘要: A charged particle beam exposure system which draws a pattern on an object to be exposed by a plurality of charged particle beams emitted from a plurality of element electron optical systems includes (a) a storage device storing (i) a standard dose data for controlling the irradiation of charged particle beams to an object to be exposed, (ii) plural pieces of proximity effect correction data for correcting the irradiation of the charged particle beams for each incidence position with respect to the object to be exposed, in order to reduce the influence of a proximity effect, and (iii) calibration data for correcting variations in the irradiation dose among the plurality of the charged particle beams emitted from the plurality of element electron optical systems, and (b) a controller for controlling the irradiation of each of the charged particle beams, based on the standard dose data, the proximity effect correction data, and the calibration data.

    摘要翻译: 一种带电粒子束曝光系统,其从多个元件电子光学系统发射的多个带电粒子束中吸收要曝光的物体上的图案,包括:(a)存储装置,存储(i)用于控制 向被曝光物体照射带电粒子束,(ii)多个邻近效应校正数据,用于校正相对于待曝光物体的每个入射位置的带电粒子束的照射,以减少影响 以及(iii)用于校正从多个元件电子光学系统发射的多个带电粒子束中的照射剂量的变化的校准数据,以及(b)用于控制每个元件的每个的照射的控制器 带电粒子束,基于标准剂量数据,邻近效应校正数据和校准数据。

    Charged-particle beam exposure apparatus and device manufacturing method using the same
    16.
    发明授权
    Charged-particle beam exposure apparatus and device manufacturing method using the same 失效
    带电粒子束曝光装置及其装置的制造方法

    公开(公告)号:US06777697B2

    公开(公告)日:2004-08-17

    申请号:US09533217

    申请日:2000-03-23

    IPC分类号: H01J37302

    摘要: An exposure apparatus for drawing a pattern on a wafer using an electron beam includes a plurality of driving elements for drawing the pattern on the wafer while scanning the wafer with a charged-particle beam, a plurality of driving data memories for storing a plurality of time-series driving data strings for driving the plurality of driving elements, each driving data memory sequentially supplying data forming the time-series driving data string from the first data to a corresponding driving element in accordance with an operation command, and a clock pattern memory for storing a plurality of operation command data strings obtained by aligning operation commands and non-operation commands in time-series, the operation commands and the non-operation commands constituting each operation command data string being sequentially supplied from the first operation command data to a corresponding driving data memory in accordance with a drawing sync clock supplied to the clock pattern memory.

    摘要翻译: 使用电子束在晶片上绘制图案的曝光装置包括:用带电粒子束扫描晶片时在晶片上绘制图案的多个驱动元件;多个用于存储多个时间的驱动数据存储器 - 用于驱动多个驱动元件的驱动数据串,每个驱动数据存储器,根据操作命令将从第一数据构成时间序列驱动数据串的数据顺序提供给相应的驱动元件;以及时钟模式存储器, 存储通过将操作命令和非操作命令对准而获得的多个操作命令数据串,将从第一操作命令数据顺次提供的每个操作命令数据串构成的操作命令和非操作命令, 根据提供给时钟图形存储器的图形同步时钟驱动数据存储器。

    Electron gun and electron beam drawing apparatus using the same
    17.
    发明授权
    Electron gun and electron beam drawing apparatus using the same 有权
    电子枪和使用电子枪的电子束描绘装置

    公开(公告)号:US06593686B1

    公开(公告)日:2003-07-15

    申请号:US09537686

    申请日:2000-03-29

    申请人: Yoshikiyo Yui

    发明人: Yoshikiyo Yui

    IPC分类号: H01J2946

    摘要: An electron gun according to this invention includes a cathode having a hemispherical electron-emitting surface, an anode which is arranged to face the cathode, and has a first aperture on the optical axis, and a bias electrode which is arranged between the anode and the cathode, receives a potential lower than one applied to the cathode, and has a second aperture larger than the electron-emitting surface of the cathode on the optical axis. The distal end of the electron-emitting surface of the cathode is arranged in contact with or outside a sphere whose diameter is equal to the diameter of the second aperture of the bias electrode.

    摘要翻译: 根据本发明的电子枪包括具有半球形电子发射表面的阴极,被布置为面向阴极的阳极,并且在光轴上具有第一孔,并且偏置电极设置在阳极和 阴极,接收低于施加到阴极的电位的电位,并且具有大于阴极在光轴上的电子发射表面的第二孔径。 阴极的电子发射表面的远端布置成与其直径等于偏置电极的第二孔直径的球体接触或外侧。

    Mask pattern transfer method, mask pattern transfer apparatus using the method, and device manufacturing method
    18.
    发明授权
    Mask pattern transfer method, mask pattern transfer apparatus using the method, and device manufacturing method 失效
    掩模图案转印方法,使用该方法的掩模图案转印装置以及装置制造方法

    公开(公告)号:US06559463B2

    公开(公告)日:2003-05-06

    申请号:US09499297

    申请日:2000-02-07

    IPC分类号: H01J3730

    摘要: A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).

    摘要翻译: 掩模台速度| Vm |,晶片台速度| Vw |和绝对值| DELTAS | 确定光束偏转值(步骤101)。 然后,根据上述判断结果判断条纹号是偶数还是奇数(步骤108),并设置掩模台,晶片台和晶片偏转器的偏转方向(步骤109和110)。 然后,晶片台和掩模台分别开始连续移动(步骤113)并且分割图案被曝光(步骤115-119)。 判断所有分割图案是否被曝光(步骤120)。 当所有分割图案都未曝光时,通过在对应于掩模上的光束宽度的晶片上添加偏转值来曝光下一分割图案(步骤121)。

    Charged-particle beam exposure apparatus, exposure system, control method therefor, and device manufacturing method
    19.
    发明授权
    Charged-particle beam exposure apparatus, exposure system, control method therefor, and device manufacturing method 失效
    带电粒子束曝光装置,曝光系统,其控制方法和装置制造方法

    公开(公告)号:US06515409B2

    公开(公告)日:2003-02-04

    申请号:US09733973

    申请日:2000-12-12

    IPC分类号: H01J3708

    摘要: An element exposure field (EF) having a size falling within a range where aberration by an electron optical system is suppressed to a predetermined amount or less is divided into a plurality of partial fields (PF), and a pattern is drawn on a substrate with an electron beam on the basis of exposure information in which charged-particle beam dosages for the plurality of partial fields are set. Each partial field (PF) is continuously scanned and exposed with a corresponding dosage contained in the exposure information. Scan/exposure for each partial field (PF) is sequentially executed for all the partial fields (PF) in the element exposure field (EF).

    摘要翻译: 将尺寸落在由电子光学系统的像差被抑制到预定量以下的范围内的元素曝光场(EF)被分成多个局部场(PF),并且在基板上绘制图案 基于其中设置用于多个部分场的带电粒子束剂量的曝光信息的电子束。 每个局部场(PF)被连续扫描并暴露于曝光信息中包含的相应剂量。 对于元素曝光区域(EF)中的所有局部场(PF),顺序执行每个部分场(PF)的扫描/曝光。

    Control system for a charged particle exposure apparatus
    20.
    发明授权
    Control system for a charged particle exposure apparatus 有权
    带电粒子曝光装置的控制系统

    公开(公告)号:US06483120B1

    公开(公告)日:2002-11-19

    申请号:US09639078

    申请日:2000-08-16

    IPC分类号: G01N2300

    CPC分类号: G01N23/20

    摘要: A control system is provided for a charged particle exposure apparatus. A plurality of dot control data are concatenated and compressed to generate compressed concatenated control data. A plurality of compressed concatenated control data are arranged to generate exposure control data. An electron beam exposure apparatus expands the exposure control data to reconstruct the plurality of dot control data, and performs exposure while controlling blankers on the basis of the reconstructed dot control data.

    摘要翻译: 为带电粒子曝光装置提供控制系统。 多个点控制数据被连接并压缩以产生压缩连接的控制数据。 布置多个压缩连接的控制数据以产生曝光控制数据。 电子束曝光装置扩大曝光控制数据以重构多个点控制数据,并且基于重构的点控制数据来控制遮挡物进行曝光。