公开(公告)号：US06559463B2

公开(公告)日：2003-05-06

申请号：US09499297

申请日：2000-02-07

申请人： Haruhito Ono ,  Yoshikiyo Yui ,  Masato Muraki

发明人： Haruhito Ono ,  Yoshikiyo Yui ,  Masato Muraki

IPC分类号： H01J3730

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766

摘要： A mask stage speed |Vm|, a wafer stage speed |Vw|, and an absolute value |&Dgr;S| of a beam deflection value are determined (step 101). Then, it is judged whether a stripe number is even or odd (step 108) and deflective directions of a mask stage, a wafer stage, and a wafer deflector are set in accordance with the above judgment result (steps 109 and 110). Then, the wafer stage and mask stage respectively start continuous movement (step 113) and divided patterns are exposed (step 115-119). It is judged whether all divided patterns are exposed (step 120). When all divided patterns are not exposed, the next divided pattern is exposed by adding a deflection value on a wafer corresponding to a beam width on a mask (step 121).

摘要翻译： 掩模台速度| Vm |，晶片台速度| Vw |和绝对值| DELTAS | 确定光束偏转值（步骤101）。 然后，根据上述判断结果判断条纹号是偶数还是奇数（步骤108），并设置掩模台，晶片台和晶片偏转器的偏转方向（步骤109和110）。 然后，晶片台和掩模台分别开始连续移动（步骤113）并且分割图案被曝光（步骤115-119）。 判断所有分割图案是否被曝光（步骤120）。 当所有分割图案都未曝光时，通过在对应于掩模上的光束宽度的晶片上添加偏转值来曝光下一分割图案（步骤121）。

公开(公告)号：US06455211B1

公开(公告)日：2002-09-24

申请号：US09243135

申请日：1999-02-03

申请人： Yoshikiyo Yui ,  Masato Muraki

发明人： Yoshikiyo Yui ,  Masato Muraki

IPC分类号： G03F900

CPC分类号： G03F9/7084 ,  G03F7/70425 ,  G03F9/7003

摘要： The joint precision of a transfer pattern is improved by correcting the relative positions between the partial transfer patterns on a transfer mask and a transfer medium. The positions of alignment marks for the partial transfer patterns on the transfer mask are measured (step 23), and the actual coordinate system of the alignment marks is calculated based on the measured positions (step 25). Parameters that represent the relative relationship between the actual coordinate system calculated in step 25 and a design coordinate system are calculated (step 26), and the transfer positions of the partial transfer patterns to the transfer medium are calculated based on the calculated parameters (step 29). After that, a mask stage and wafer stage are driven based on the transfer positions calculated in step 29 to sequentially transfer patterns by exposure (steps 34 to 40).

摘要翻译： 通过校正转印掩模上的部分转印图案和转印介质之间的相对位置，改善了转印图案的联合精度。 测量转印掩模上部分转印图案的对准标记的位置（步骤23），并根据测量位置计算对准标记的实际坐标系（步骤25）。 计算表示在步骤25中计算的实际坐标系与设计坐标系之间的相对关系的参数（步骤26），并且基于所计算的参数计算部分转印图案到转印介质的转印位置（步骤29 ）。 之后，基于步骤29中计算的传送位置驱动掩模台和晶片台，以通过曝光依次传送图案（步骤34至40）。

公开(公告)号：US06835937B1

公开(公告)日：2004-12-28

申请号：US09708590

申请日：2000-11-09

申请人： Masato Muraki ,  Yoshikiyo Yui

发明人： Masato Muraki ,  Yoshikiyo Yui

IPC分类号： G01T100

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31769

摘要： A charged particle beam exposure system which draws a pattern on an object to be exposed by a plurality of charged particle beams emitted from a plurality of element electron optical systems includes (a) a storage device storing (i) a standard dose data for controlling the irradiation of charged particle beams to an object to be exposed, (ii) plural pieces of proximity effect correction data for correcting the irradiation of the charged particle beams for each incidence position with respect to the object to be exposed, in order to reduce the influence of a proximity effect, and (iii) calibration data for correcting variations in the irradiation dose among the plurality of the charged particle beams emitted from the plurality of element electron optical systems, and (b) a controller for controlling the irradiation of each of the charged particle beams, based on the standard dose data, the proximity effect correction data, and the calibration data.

摘要翻译： 一种带电粒子束曝光系统，其从多个元件电子光学系统发射的多个带电粒子束中吸收要曝光的物体上的图案，包括：（a）存储装置，存储（i）用于控制 向被曝光物体照射带电粒子束，（ii）多个邻近效应校正数据，用于校正相对于待曝光物体的每个入射位置的带电粒子束的照射，以减少影响 以及（iii）用于校正从多个元件电子光学系统发射的多个带电粒子束中的照射剂量的变化的校准数据，以及（b）用于控制每个元件的每个的照射的控制器 带电粒子束，基于标准剂量数据，邻近效应校正数据和校准数据。

公开(公告)号：US06777697B2

公开(公告)日：2004-08-17

申请号：US09533217

申请日：2000-03-23

申请人： Yoshikiyo Yui ,  Masato Muraki

发明人： Yoshikiyo Yui ,  Masato Muraki

IPC分类号： H01J37302

CPC分类号： H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： An exposure apparatus for drawing a pattern on a wafer using an electron beam includes a plurality of driving elements for drawing the pattern on the wafer while scanning the wafer with a charged-particle beam, a plurality of driving data memories for storing a plurality of time-series driving data strings for driving the plurality of driving elements, each driving data memory sequentially supplying data forming the time-series driving data string from the first data to a corresponding driving element in accordance with an operation command, and a clock pattern memory for storing a plurality of operation command data strings obtained by aligning operation commands and non-operation commands in time-series, the operation commands and the non-operation commands constituting each operation command data string being sequentially supplied from the first operation command data to a corresponding driving data memory in accordance with a drawing sync clock supplied to the clock pattern memory.

摘要翻译： 使用电子束在晶片上绘制图案的曝光装置包括：用带电粒子束扫描晶片时在晶片上绘制图案的多个驱动元件;多个用于存储多个时间的驱动数据存储器 - 用于驱动多个驱动元件的驱动数据串，每个驱动数据存储器，根据操作命令将从第一数据构成时间序列驱动数据串的数据顺序提供给相应的驱动元件;以及时钟模式存储器， 存储通过将操作命令和非操作命令对准而获得的多个操作命令数据串，将从第一操作命令数据顺次提供的每个操作命令数据串构成的操作命令和非操作命令， 根据提供给时钟图形存储器的图形同步时钟驱动数据存储器。

公开(公告)号：US06515409B2

公开(公告)日：2003-02-04

申请号：US09733973

申请日：2000-12-12

申请人： Masato Muraki ,  Yoshikiyo Yui

发明人： Masato Muraki ,  Yoshikiyo Yui

IPC分类号： H01J3708

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31769

摘要： An element exposure field (EF) having a size falling within a range where aberration by an electron optical system is suppressed to a predetermined amount or less is divided into a plurality of partial fields (PF), and a pattern is drawn on a substrate with an electron beam on the basis of exposure information in which charged-particle beam dosages for the plurality of partial fields are set. Each partial field (PF) is continuously scanned and exposed with a corresponding dosage contained in the exposure information. Scan/exposure for each partial field (PF) is sequentially executed for all the partial fields (PF) in the element exposure field (EF).

摘要翻译： 将尺寸落在由电子光学系统的像差被抑制到预定量以下的范围内的元素曝光场（EF）被分成多个局部场（PF），并且在基板上绘制图案 基于其中设置用于多个部分场的带电粒子束剂量的曝光信息的电子束。 每个局部场（PF）被连续扫描并暴露于曝光信息中包含的相应剂量。 对于元素曝光区域（EF）中的所有局部场（PF），顺序执行每个部分场（PF）的扫描/曝光。

公开(公告)号：US06483120B1

公开(公告)日：2002-11-19

申请号：US09639078

申请日：2000-08-16

申请人： Yoshikiyo Yui ,  Masato Muraki

发明人： Yoshikiyo Yui ,  Masato Muraki

IPC分类号： G01N2300

CPC分类号： G01N23/20

摘要： A control system is provided for a charged particle exposure apparatus. A plurality of dot control data are concatenated and compressed to generate compressed concatenated control data. A plurality of compressed concatenated control data are arranged to generate exposure control data. An electron beam exposure apparatus expands the exposure control data to reconstruct the plurality of dot control data, and performs exposure while controlling blankers on the basis of the reconstructed dot control data.

摘要翻译： 为带电粒子曝光装置提供控制系统。 多个点控制数据被连接并压缩以产生压缩连接的控制数据。 布置多个压缩连接的控制数据以产生曝光控制数据。 电子束曝光装置扩大曝光控制数据以重构多个点控制数据，并且基于重构的点控制数据来控制遮挡物进行曝光。

公开(公告)号：US06466301B1

公开(公告)日：2002-10-15

申请号：US09487314

申请日：2000-01-19

申请人： Yoshikiyo Yui ,  Masato Muraki

发明人： Yoshikiyo Yui ,  Masato Muraki

IPC分类号： G03B2742

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70358 ,  G03F9/70 ,  H01J37/3045 ,  H01J37/3174

摘要： Alignment marks of partial transfer patterns on a transfer mask are measured. On the basis of these measured alignment marks, functions for determining the positions of the alignment marks and the scale magnification in the relative scanning direction are calculated. The start and end positions of transfer of the partial transfer patterns to an object of transfer are calculated, and the scale magnification for moving a mask stage is corrected. The mask stage and a wafer stage are moved to sequentially expose the partial transfer patterns.

摘要翻译： 测量转印掩模上部分转印图案的对准标记。 基于这些测量的对准标记，计算用于确定对准标记的位置和相对扫描方向的刻度倍率的功能。 计算将部分转印图案转印到转印对象的开始和结束位置，并且校正用于移动掩模台的标度放大率。 移动掩模台和晶片台以依次暴露部分转印图案。

公开(公告)号：US06903352B2

公开(公告)日：2005-06-07

申请号：US09733980

申请日：2000-12-12

申请人： Masato Muraki ,  Yoshikiyo Yui

发明人： Masato Muraki ,  Yoshikiyo Yui

IPC分类号： H01J37/305 ,  G03F7/20 ,  H01J37/302 ,  H01J37/317 ,  H01L21/027 ,  G03F9/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/30461

摘要： A charged-particle beam exposure apparatus for exposing a member to be exposed to a charged particle beam with a pattern includes memories (902-905) for storing a plurality of control data for controlling reference dose data of the charged particle beam in accordance with the incident position of the charged particle beam on the member to be exposed, a selector (907) for selecting any one of the plurality of control data stored in the memories, and an exposure unit for controlling the reference dose data of the charged particle beam for each irradiation position on the basis of the control data selected by the selector, thereby exposing the member to be exposed with the pattern. The charged-particle beam exposure apparatus rapidly performs proper proximity effect correction to expose the member to be exposed with the pattern.

摘要翻译： 用于使被暴露于带电粒子束的构件暴露于图案的带电粒子束曝光装置包括用于存储多个用于控制带电粒子束的参考剂量数据的控制数据的存储器（902-905） 带电粒子束在要曝光的构件上的入射位置，用于选择存储在存储器中的多个控制数据中的任何一个的选择器（907），以及用于控制带电粒子束的参考剂量数据的曝光单元 基于由选择器选择的控制数据的每个照射位置，从而使该图案曝光的构件露出。 带电粒子束曝光装置快速进行适当的邻近效应校正，以暴露出具有图案的待暴露部件。

公开(公告)号：US20050253082A1

公开(公告)日：2005-11-17

申请号：US11168425

申请日：2005-06-29

申请人： Haruhito Ono ,  Masato Muraki

发明人： Haruhito Ono ,  Masato Muraki

IPC分类号： G03F7/20 ,  G01N23/00 ,  G21G5/00 ,  G21K5/10 ,  H01J9/14 ,  H01J9/18 ,  H01J37/04 ,  H01J37/12 ,  H01J37/24 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01L31/00 ,  G21K7/00 ,  G21K1/08

CPC分类号： H01J37/12 ,  G01N23/00 ,  H01J9/14 ,  H01J9/18 ,  H01J37/3007 ,  H01J2237/1205 ,  H01J2237/151 ,  H01J2237/1534 ,  H01J2237/3175 ,  H01J2237/31774

摘要： A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.

摘要翻译： 带电粒子束曝光装置包括用于发射带电粒子束的带电粒子束源，具有多个电子透镜并由多个电子透镜形成带电粒子束源的多个中间图像的电光系统阵列 的电子透镜，以及用于在基板上投影由电光系统阵列形成的多个中间图像的投射电光系统。 电光系统阵列包括沿着多个带电粒子束的路径布置的至少两个电极，所述至少两个电极中的每一个在所述多个带电粒子束的路径上具有多个孔，以及屏蔽电极， 设置在所述至少两个电极之间并且具有对应于所述多个带电粒子束的相应路径的多个屏蔽。

公开(公告)号：US07126141B2

公开(公告)日：2006-10-24

申请号：US11168425

申请日：2005-06-29

申请人： Haruhito Ono ,  Masato Muraki

发明人： Haruhito Ono ,  Masato Muraki

IPC分类号： G21K5/00

CPC分类号： H01J37/12 ,  G01N23/00 ,  H01J9/14 ,  H01J9/18 ,  H01J37/3007 ,  H01J2237/1205 ,  H01J2237/151 ,  H01J2237/1534 ,  H01J2237/3175 ,  H01J2237/31774

摘要： A charged-particle beam exposure apparatus includes a charged-particle beam source for emitting a charged-particle beam, an electrooptic system array which has a plurality of electron lenses and forms a plurality of intermediate images of the charged-particle beam source by the plurality of electron lenses, and a projection electrooptic system for projecting on a substrate the plurality of intermediate images formed by the electrooptic system array. The electrooptic system array includes at least two electrodes arranged along paths of a plurality of charged-particle beams, each of the at least two electrodes having a plurality of apertures on the paths of the plurality of charged-particle beams, and a shield electrode which is interposed between the at least two electrodes and has a plurality of shields corresponding to the respective paths of the plurality of charged-particle beams.

摘要翻译： 带电粒子束曝光装置包括用于发射带电粒子束的带电粒子束源，具有多个电子透镜并由多个电子透镜形成带电粒子束源的多个中间图像的电光系统阵列 的电子透镜，以及用于在基板上投影由电光系统阵列形成的多个中间图像的投射电光系统。 电光系统阵列包括沿着多个带电粒子束的路径布置的至少两个电极，所述至少两个电极中的每一个在所述多个带电粒子束的路径上具有多个孔，以及屏蔽电极， 设置在所述至少两个电极之间并且具有对应于所述多个带电粒子束的相应路径的多个屏蔽。