公开(公告)号：US06736894B2

公开(公告)日：2004-05-18

申请号：US10227227

申请日：2002-08-26

申请人： Takamitsu Kawahara ,  Hiroyuki Nagasawa ,  Kuniaki Yagi

发明人： Takamitsu Kawahara ,  Hiroyuki Nagasawa ,  Kuniaki Yagi

IPC分类号： C30B2502

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406

摘要： To provide a method of manufacturing compound semiconductor single crystals such as silicon carbide and gallium nitride by epitaxial growth methods, that is capable of yielding compound single crystals of comparatively low planar defect density. The method of manufacturing compound single crystals in which two or more compound single crystalline layers identical to or differing from a single crystalline substrate are sequentially epitaxially grown on the surface of said substrate. At least a portion of said substrate surface has plural undulations extending in a single direction and second and subsequent epitaxial growth is conducted after the formation of plural undulations extending in a single direction in at least a portion of the surface of the compound single crystalline layer formed proximately.

摘要翻译： 为了提供通过外延生长方法制造化合物半导体单晶如碳化硅和氮化镓的方法，其能够产生具有相对低的平面缺陷密度的复合单晶。 制造其中两个或多个与单晶衬底相同或不同的化合物单晶层的化合物单晶的方法在所述衬底的表面上顺序地外延生长。 所述衬底表面的至少一部分具有沿单个方向延伸的多个起伏，并且在形成复合单晶层的表面的至少一部分中的单一方向上形成多个起伏之后进行第二次和随后的外延生长 接近

公开(公告)号：US06703288B2

公开(公告)日：2004-03-09

申请号：US10140187

申请日：2002-05-08

申请人： Hiroyuki Nagasawa ,  Kuniaki Yagi ,  Takamitsu Kawahara

发明人： Hiroyuki Nagasawa ,  Kuniaki Yagi ,  Takamitsu Kawahara

IPC分类号： H01L2120

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/406 ,  Y10S438/931

摘要： Provided are a compound semiconductor crystal substrate capable of reducing planar defects such as twins and anti-phase boundaries occurring in epitaxially grown crystals without additional steps beyond epitaxial growth, and a method of manufacturing the same. A compound single crystal substrate, the basal plane of which is a nonpolar face, with said basal plane having a partial surface having polarity (a partial polar surface). Said partial polar surface is a polar portion of higher surface energy than said basal plane. A method of manufacturing the compound single crystal substrate, comprising the steps of: epitaxially growing a compound single crystal in the normal direction on a basal plane of a compound single crystal substrate wherein the basal plane is a nonpolar face and has a partial polar surface in a portion thereof, and either cutting the compound single crystal layer that has been grown in parallel to the basal plane, or removing at least said substrate to obtain a compound single crystal block, a basal plane of which is a nonpolar face only having a partial polar surface with the highest surface energy in a portion thereof.

摘要翻译： 提供一种化合物半导体晶体基板及其制造方法，其能够减少在外延生长的晶体中发生的诸如双胞胎和反相边界的平面缺陷，而不需要超出外延生长的附加步骤。 复合单晶基板，其基面是非极性面，所述基面具有具有极性的部分表面（部分极性表面）。 所述部分极性表面是比所述基面更高表面能的极性部分。 一种制造复合单晶衬底的方法，包括以下步骤：在复合单晶衬底的基面上沿正向外延生长化合物单晶，其中基面是非极性面并具有部分极性表面 并且切割已经与基底平行生长的化合物单晶层，或者至少去除所述基底，以获得化合物单晶块，其基面是仅具有部分 极地表面在其一部分具有最高的表面能。

公开(公告)号：US06596080B2

公开(公告)日：2003-07-22

申请号：US09827178

申请日：2001-04-06

申请人： Takamitsu Kawahara ,  Hiroyuki Nagasawa ,  Kuniaki Yagi

发明人： Takamitsu Kawahara ,  Hiroyuki Nagasawa ,  Kuniaki Yagi

IPC分类号： C30B2518

CPC分类号： C23C16/325 ,  C30B19/00 ,  C30B25/02 ,  C30B25/18 ,  C30B29/36

摘要： A process for preparation of silicon carbide by depositing silicon carbide on at least a part of a surface of a substrate having on its surface undulations extending approximately in parallel with each other, wherein a center line average of said undulations is in a range of from 3 to 1,000 nm, gradients of inclined planes of said undulations are in a range of from 1° to 54.7°, and, in a cross section orthogonal to a direction along which the undulations are extended, portions at which neighboring inclined planes are brought in contact with each other are in a curve shape. The substrate is silicon or silicon carbide having a surface with a plane normal in a crystallographic orientation, having {001} planes accounting for 10% or less of the entire area of the surface, etc. Also claimed is a single crystal silicon carbide having a planar defect density of 1,000/cm2 or lower, or having an internal stress of 10 MPa or lower.

公开(公告)号：US20110006310A1

公开(公告)日：2011-01-13

申请号：US12742398

申请日：2008-11-11

申请人： Hiroyuki Nagasawa ,  Naoki Hatta ,  Takamitsu Kawahara ,  Hikaru Kobayashi

发明人： Hiroyuki Nagasawa ,  Naoki Hatta ,  Takamitsu Kawahara ,  Hikaru Kobayashi

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： H01L29/872 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/94

摘要： A semiconductor device comprises a semiconductor substrate made of silicon carbide, a gate insulating film formed on the semiconductor substrate, and a gate electrode formed on the gate insulating film. The junction surface of the semiconductor surface joined with the gate insulating film is macroscopically parallel to a nonpolar face and microscopically comprised of the nonpolar face and a polar face. In the polar face, either a Si face or a C face is dominant. A semiconductor device comprises a semiconductor substrate comprised of silicon carbide and a gate electrode formed on the semiconductor substrate. The junction surface of the semiconductor surface joined with the electrode is macroscopically parallel to a nonpolar face and microscopically comprised of the nonpolar face and a polar face. In the polar face, either a Si face or a C face is dominant. The present invention is a semiconductor device having a silicon carbide substrate, and the electrical characteristics and the stability of the interface between the electrode and the silicon carbide or between the oxide film (insulating film) and the silicon carbide in the nonpolar face of a silicon carbide epitaxial layer can be improved.

摘要翻译： 半导体器件包括由碳化硅制成的半导体衬底，形成在半导体衬底上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 与栅极绝缘膜接合的半导体表面的接合表面在宏观上平行于非极性面并且显微地由非极性面和极面组成。 在极面中，Si面或C面是主要的。 半导体器件包括由碳化硅构成的半导体衬底和形成在半导体衬底上的栅电极。 与电极接合的半导体表面的结表面在宏观上平行于非极性面并且显微地由非极性面和极面组成。 在极面中，Si面或C面是主要的。 本发明是一种具有碳化硅衬底的半导体器件，以及电极和碳化硅之间或氧化膜（绝缘膜）和硅的非极性表面中的碳化硅之间的界面的电特性和稳定性 可以改善碳化物外延层。

公开(公告)号：US6128363A

公开(公告)日：2000-10-03

申请号：US979839

申请日：1997-11-26

申请人： Tsutomu Shoki ,  Takamitsu Kawahara

发明人： Tsutomu Shoki ,  Takamitsu Kawahara

IPC分类号： G03F1/22 ,  G21K1/10 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G21K5/00

CPC分类号： G21K1/10

摘要： An X-ray mask blank makes it possible to manufacture an X-ray mask which has an extremely low stress, thus providing an extremely high positional accuracy. In the X-ray mask blank, an X-ray transparent film is formed on a substrate, and an X-ray absorber film is formed on the X-ray transparent film. The top and/or the bottom of the X-ray absorber film is provided with a film in which the product of the film stress and the film thickness thereof lies in the range of 0 to .+-.1.times.10.sup.4 dyn/cm.

摘要翻译： X射线掩模坯料可以制造具有极低应力的X射线掩模，从而提供非常高的位置精度。 在X射线掩模坯料中，在基板上形成X射线透明膜，在X射线透明膜上形成X射线吸收膜。 X射线吸收膜的顶部和/或底部设置有膜应力和膜厚度的乘积在0至+/- 1×104dyn / cm的范围内的膜。

公开(公告)号：US06317480B1

公开(公告)日：2001-11-13

申请号：US09296805

申请日：1999-04-23

申请人： Tsutomu Shoki ,  Akinori Kurikawa ,  Takamitsu Kawahara ,  Ryo Ohkubo

发明人： Tsutomu Shoki ,  Akinori Kurikawa ,  Takamitsu Kawahara ,  Ryo Ohkubo

IPC分类号： G03F900

CPC分类号： G03F1/22

摘要： An X-ray mask including a mask support formed into the shape of a frame, an X-ray-transparent film which is supported so as to extend over the surface of the frame-shaped mask support and which permits transmission of X-rays, and a desired X-ray-absorbing film pattern laid on the X-ray-transparent film, wherein the mask support has a thickness which by itself affords sufficient mechanical strength; and a step is formed along the periphery of the mask support.

摘要翻译： 一种X射线掩模，其包括形成为框架形状的掩模支撑体，X射线透明膜被支撑以在框状掩模支撑体的表面上延伸并且允许X射线的透射， 以及放置在X射线透明膜上的期望的X射线吸收膜图案，其中掩模支撑体具有本身提供足够的机械强度的厚度; 并且沿着掩模支撑件的周边形成台阶。

公开(公告)号：US5999590A

公开(公告)日：1999-12-07

申请号：US990041

申请日：1997-12-12

申请人： Tsutomu Shoki ,  Takamitsu Kawahara

发明人： Tsutomu Shoki ,  Takamitsu Kawahara

IPC分类号： G03F1/22 ,  H01L21/027 ,  G03F1/16

CPC分类号： G03F1/22

摘要： An X-ray mask blank and a manufacturing method for an X-ray mask make it possible to manufacture an X-ray mask which has an extremely low stress, thus providing an extremely high positional accuracy. In the X-ray mask blank, an X-ray transparent film is formed on a substrate, and an X-ray absorber film is formed on the X-ray transparent film. An etching mask layer composed of a material containing chromium and carbon, and/or nitrogen is provided on the X-ray absorber film.

摘要翻译： X射线掩模坯料和X射线掩模的制造方法使得可以制造具有极低应力的X射线掩模，从而提供非常高的位置精度。 在X射线掩模坯料中，在基板上形成X射线透明膜，在X射线透明膜上形成X射线吸收膜。 由含有铬和碳的材料和/或氮组成的蚀刻掩模层设置在X射线吸收膜上。

公开(公告)号：US5848120A

公开(公告)日：1998-12-08

申请号：US923183

申请日：1997-09-04

申请人： Tsutomu Shoki ,  Takamitsu Kawahara

发明人： Tsutomu Shoki ,  Takamitsu Kawahara

IPC分类号： G21K5/02 ,  G03F1/22 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F1/16

CPC分类号： G03F1/22

摘要： There is provided an X-ray mask blank from which an X-ray mask having a remarkably small positional deformation even at a large window size of 50 mm square and a remarkably positional precision can be manufactured. The X-mask blank has an X-ray transparent film on a substrate and an X-ray absorber film on the X-ray transparent film. A product of Young modulus and film thickness of the X-ray transparent film is 6.times.10.sup.8 to 3.times.10.sup.9 dyn/cm.

摘要翻译： 提供一种X射线掩模坯料，可以制造即使在大的窗口尺寸为50mm见方也具有非常小的位置变形且显着位置精度的X射线掩模。 X面罩坯料在基板上具有X射线透明膜，在X射线透明膜上具有X射线吸收膜。 X射线透明膜的杨氏模量和膜厚的乘积为6×10 8〜3×10 9体积/ cm。