公开(公告)号：US20100148182A1

公开(公告)日：2010-06-17

申请号：US12429388

申请日：2009-04-24

Applicant: Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

Inventor： Hong-Kee CHIN ,  Sang-Gab KIM ,  Woong-Kwon KIM ,  Yong-Mo CHOI ,  Seung-Ha CHOI ,  Shin-Il CHOI ,  Ho-Jun LEE ,  Jung-Suk BANG ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L27/12 ,  H01L27/1248 ,  H01L27/1288

Abstract: A thin film transistor (TFT) substrate is provided in which a sufficiently large contact area between conductive materials is provided in a contact portion and a method of fabricating the TFT substrate. The TFT substrate includes a gate interconnection line formed on an insulating substrate, a gate insulating layer covering the gate interconnection line, a semiconductor layer arranged on the gate insulating layer, a data interconnection line including a data line, a source electrode and a drain electrode formed on the semiconductor layer, a first passivation layer formed on the data interconnection line and exposing the drain electrode, a second passivation layer formed on the first passivation film and a pixel electrode electrically connected to the drain electrode. An outer sidewall of the second passivation layer is positioned inside an outer sidewall of the first passivation layer.

Abstract translation: 提供一种薄膜晶体管（TFT）基板，其中在接触部分中提供导电材料之间的足够大的接触面积以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极互连线，覆盖栅极互连线的栅极绝缘层，布置在栅极绝缘层上的半导体层，包括数据线，源极和漏极的数据互连线 形成在所述半导体层上，形成在所述数据互连线上并暴露所述漏电极的第一钝化层，形成在所述第一钝化膜上的第二钝化层和与所述漏电极电连接的像素电极。 第二钝化层的外侧壁位于第一钝化层的外侧壁的内侧。

公开(公告)号：US20100006844A1

公开(公告)日：2010-01-14

申请号：US12464452

申请日：2009-05-12

Applicant: Woong-Kwon KIM ,  Jun-Ho SONG ,  Joo-Han KIM ,  In-Woo KIM ,  Ho-Jun LEE

Inventor： Woong-Kwon KIM ,  Jun-Ho SONG ,  Joo-Han KIM ,  In-Woo KIM ,  Ho-Jun LEE

IPC: H01L33/00 ,  H01L21/336

CPC classification number: H01L27/1288 ,  H01L27/124

Abstract: A thin-film transistor (“TFT”) array and a method of fabricating the TFT array panel include: an insulating substrate; a gate line and a data line which are insulated from each other on the insulating substrate and are arranged in a lattice; common wiring extended parallel to the gate line on the insulating substrate; a gate insulating film disposed on the gate line and the common wiring; a semiconductor layer disposed on the gate insulating film; contact holes which penetrate through the gate insulating film and the semiconductor layer disposed on the common wiring; a plurality of common electrodes connected to the common wiring by the contact holes and arranged parallel to each other; and a plurality of pixel electrodes arranged parallel to the plurality of common electrodes.

Abstract translation: 薄膜晶体管（“TFT”）阵列和制造TFT阵列面板的方法包括：绝缘基片; 栅极线和数据线，其在绝缘基板上彼此绝缘并且布置成格子; 公共布线平行于绝缘基板上的栅极线延伸; 设置在栅极线和公共布线上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层; 穿过栅极绝缘膜的接触孔和布置在公共布线上的半导体层; 多个公共电极通过接触孔连接到公共布线并且彼此平行布置; 以及平行于所述多个公共电极排列的多个像素电极。

公开(公告)号：US20090068822A1

公开(公告)日：2009-03-12

申请号：US12177490

申请日：2008-07-22

Applicant: Yong-Jin KIM ,  Ji-Hoon KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ho-Jun LEE

Inventor： Yong-Jin KIM ,  Ji-Hoon KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ho-Jun LEE

IPC: H01L21/20 ,  C30B25/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18

Abstract: Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si3N4) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.

Abstract translation: 提供一种制备用于生长氮化镓和氮化镓衬底的衬底的方法。 该方法包括在硅衬底的表面上进行热清洗，以原位方式在硅衬底的表面上形成氮化硅（Si 3 N 4）微掩模，并通过外延横向过度生长（ELO）生长氮化镓层， 在微面罩中使用开口。 根据该方法，通过改善典型的ELO，可以简化制备用于生长氮化镓和氮化镓衬底的衬底的方法，并降低工艺成本。

公开(公告)号：US20080032675A1

公开(公告)日：2008-02-07

申请号：US11835205

申请日：2007-08-07

Applicant: Ho-Jun LEE ,  Chul-Yong Jeon

Inventor： Ho-Jun LEE ,  Chul-Yong Jeon

IPC: H04M1/64

CPC classification number: H04M1/645 ,  H04M1/72566

Abstract: Disclosed are a method and a mobile terminal for outputting an automatic response message informing a caller of a user's (i.e. recipient's) current schedule when the user is unable to answer an incoming call. The method includes receiving an incoming call, determining whether an automatic response key is pressed to output an automatic response message with implementation of the schedule management function, detecting any schedule information corresponding to the current time by reference to a schedule management table when the automatic response key is pressed, and sending a schedule informing message including the detected schedule information to a caller's terminal.

Abstract translation: 公开了一种方法和移动终端，用于在用户不能应答呼入时输出通知呼叫者用户（即接收方）当前时间表的自动应答消息。 该方法包括接收来电，确定是否按照自动响应键输出自动响应消息，并执行日程管理功能，当自动响应时参考时间表管理表，检测与当前时间相对应的任何时间表信息 键，并向呼叫者的终端发送包括检测到的日程信息的调度通知消息。