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公开(公告)号：US07880200B2
公开(公告)日：2011-02-01
申请号：US11864238
申请日：2007-09-28
申请人： Frank Hille , Carsten Schaeffer , Frank Pfirsch , Holger Ruething
发明人： Frank Hille , Carsten Schaeffer , Frank Pfirsch , Holger Ruething
IPC分类号： H01L29/732
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0634 , H01L29/0834 , H01L29/1095 , H01L29/41766 , H01L29/4236 , H01L29/6634 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7396 , H01L29/7397 , H01L29/7805 , H01L29/7813
摘要： A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.
摘要翻译： 公开了一种半导体器件和制造方法。 在一个实施例中，半导体器件包括位于半导体本体表面上的第一电极和第二电极以及绝缘栅电极。 半导体本体具有用于中间氧化物层中的第一电极的接触槽。 第一导电类型的高掺杂区域位于源极连接区域的边缘区域。 在第一导电类型的高掺杂区之下，存在具有互补导电类型的体区的高掺杂区。 在源极连接区域的中心区域，体区具有互补导电类型的净电荷载流子浓度，该互补导电类型低于源极连接区域的边缘区域中的载流子浓度。
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公开(公告)号：US08155916B2
公开(公告)日：2012-04-10
申请号：US12168369
申请日：2008-07-07
IPC分类号： G01K7/16
CPC分类号： H01L23/34 , H01L23/647 , H01L27/0248 , H01L29/0696 , H01L29/42312 , H01L2924/0002 , H01L2924/00
摘要： One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon.
摘要翻译： 一个实施例提供集成在半导体本体中的电路装置。 提供集成在半导体本体中并且具有控制连接和负载连接的至少一个功率半导体部件。 电阻分量热耦合到功率半导体部件，并且同样集成到半导体本体中并且布置在功率半导体部件的控制连接和负载连接之间。 电阻分量具有温度依赖性电阻特性曲线。 驱动和评估单元被设计为评估通过电阻分量的电流或电阻分量两端的电压降，并提供依赖于其的温度信号。
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公开(公告)号：US08478559B2
公开(公告)日：2013-07-02
申请号：US13423883
申请日：2012-03-19
CPC分类号： H01L23/34 , H01L23/647 , H01L27/0248 , H01L29/0696 , H01L29/42312 , H01L2924/0002 , H01L2924/00
摘要： One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone.
摘要翻译： 一个实施例提供一种包括半导体本体和集成在其中的功率半导体元件的半导体芯片。 功率半导体部件包括布置在半导体主体的第一表面上的负载电极区域，布置在第一表面上的控制电极区域，控制电极区域与负载电极区域电绝缘，以及布置在负载上的电阻轨道 电极区和控制电极区。 电阻轨道确保负载电极区域和控制电极区域之间的电连接。
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公开(公告)号：US20120175780A1
公开(公告)日：2012-07-12
申请号：US13423883
申请日：2012-03-19
CPC分类号： H01L23/34 , H01L23/647 , H01L27/0248 , H01L29/0696 , H01L29/42312 , H01L2924/0002 , H01L2924/00
摘要： One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone.
摘要翻译： 一个实施例提供一种包括半导体本体和集成在其中的功率半导体元件的半导体芯片 功率半导体部件包括布置在半导体主体的第一表面上的负载电极区域，布置在第一表面上的控制电极区域，控制电极区域与负载电极区域电绝缘，以及布置在负载上的电阻轨道 电极区和控制电极区。 电阻轨道确保负载电极区域和控制电极区域之间的电连接。
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公开(公告)号：US20100001785A1
公开(公告)日：2010-01-07
申请号：US12168369
申请日：2008-07-07
CPC分类号： H01L23/34 , H01L23/647 , H01L27/0248 , H01L29/0696 , H01L29/42312 , H01L2924/0002 , H01L2924/00
摘要： One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon.
摘要翻译： 一个实施例提供集成在半导体本体中的电路装置。 提供集成在半导体本体中并且具有控制连接和负载连接的至少一个功率半导体部件。 电阻分量热耦合到功率半导体部件，并且同样集成到半导体本体中并且布置在功率半导体部件的控制连接和负载连接之间。 电阻分量具有温度依赖性电阻特性曲线。 驱动和评估单元被设计为评估通过电阻分量的电流或电阻分量两端的电压降，并提供依赖于其的温度信号。
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