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    PROFILED SPUTTERING TARGET AND METHOD OF MAKING THE SAME
    15.
    发明申请
    PROFILED SPUTTERING TARGET AND METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20220139685A1

    公开(公告)日：2022-05-05

    申请号：US17574950

    申请日：2022-01-13

    Applicant: Honeywell International Inc.

    Inventor： Shih-Yao Lin ,  Stephane Ferrasse ,  Jaeyeon Kim ,  Frank C. Alford

    IPC: H01J37/34 ,  C23C14/34

    Abstract: A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

    Profiled sputtering target and method of making the same
    16.
    发明授权
    Profiled sputtering target and method of making the same 有权

    公开(公告)号：US11244815B2

    公开(公告)日：2022-02-08

    申请号：US15947586

    申请日：2018-04-06

    Applicant: Honeywell International Inc.

    Inventor： Shih-Yao Lin ,  Stephane Ferrasse ,  Jaeyeon Kim ,  Frank C. Alford

    IPC: H01J37/34 ,  C23C14/34

    Abstract: A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

    Profiled sputtering target and method of making the same
    18.
    发明授权
    Profiled sputtering target and method of making the same 有权

    公开(公告)号：US12217951B2

    公开(公告)日：2025-02-04

    申请号：US17574950

    申请日：2022-01-13

    Applicant: Honeywell International Inc.

    Inventor： Shih-Yao Lin ,  Stephane Ferrasse ,  Jaeyeon Kim ,  Frank C. Alford

    IPC: H01J37/34 ,  C23C14/34

    Abstract: A sputtering target comprising a sputtering material and having a non-planar sputtering surface prior to erosion by use in a sputtering system, the non-planar sputtering surface having a circular shape and comprising a central axis region including a concave curvature feature at the central axis region. The central axis region having a wear profile after erosion by use in a sputtering system for at least 1000 kWhrs including a protuberance including a first outer circumferential wear surface having a first slope. A reference, protruding convex curvature feature for a reference target after sputtering use for the same time includes a second outer circumferential wear surface having a second slope. The protuberance provides a sputtered target having reduced shadowing relative to the reference, protruding convex curvature feature, wherein the first slope is less steep than a second slope.

    ECAE processing for high strength and high hardness aluminum alloys
    19.
    发明授权
    ECAE processing for high strength and high hardness aluminum alloys 有权

    公开(公告)号：US11649535B2

    公开(公告)日：2023-05-16

    申请号：US16580905

    申请日：2019-09-24

    Applicant: Honeywell International Inc.

    Inventor： Stephane Ferrasse ,  Frank C. Alford ,  Susan D. Strothers ,  Patrick Underwood

    IPC: C22F1/047 ,  B21C23/00 ,  C22C21/08

    CPC classification number: C22F1/047 ,  B21C23/002 ,  C22C21/08

    Abstract: A method of forming a high strength aluminum alloy is disclosed. The method includes solutionizing to a temperature ranging from about 5° C. above a standard solutionizing temperature to about 5° C. below an incipient melting temperature for the aluminum material to form a heated aluminum material, which is then quenched. The aluminum material includes at least one of magnesium and silicon as a secondary component at a concentration of at least 0.2% by weight. The cooled aluminum material is subjected to ECAE processing using one of isothermal conditions and non-isothermal conditions. Isothermal conditions include having a billet and a die at the same temperature from about 80° C. to about 200° C. Non-isothermal conditions include having a billet at a temperature from about 80° C. to about 200° C. and a die at a temperature of at most 100° C. The aluminum material is than aged at a temperature from about 100° C. to about 175° C.

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