公开(公告)号：US11587708B2

公开(公告)日：2023-02-21

申请号：US17038470

申请日：2020-09-30

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Van Dai Nguyen ,  Sebastien Couet ,  Olivier Bultynck ,  Danny Wan ,  Eline Raymenants

IPC: G11C11/16 ,  H01F10/32 ,  G01R33/09 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.

公开(公告)号：US11545621B2

公开(公告)日：2023-01-03

申请号：US15930272

申请日：2020-05-12

Applicant: IMEC vzw

Inventor： Sebastien Couet ,  Johan Swerts

IPC: H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01F10/30

Abstract: The disclosed technology relates generally to semiconductor devices, and more particularly to a layer stack for a magnetic tunnel junction (MTJ) device, and a method of forming the same. According to an aspect, a layer stack for a (MTJ) device comprises a seed layer structure, a pinning layer structure arranged above the seed layer structure, and above the pinning layer structure a Fe-comprising reference layer structure and a free layer structure separated by a tunnel barrier layer. The seed layer structure comprises a Ru-comprising layer and a Cr-comprising layer. The Cr-comprising layer forms an upper layer of the seed layer structure.

公开(公告)号：US20210104344A1

公开(公告)日：2021-04-08

申请号：US17038470

申请日：2020-09-30

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Van Dai Nguyen ,  Sebastien Couet ,  Olivier Bultynck ,  Danny Wan ,  Eline Raymenants

IPC: H01F10/32 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G01R33/09

Abstract: In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.

公开(公告)号：US10770213B2

公开(公告)日：2020-09-08

申请号：US16409585

申请日：2019-05-10

Applicant: IMEC vzw

Inventor： Johan Swerts ,  Sebastien Couet

IPC: G11B5/39 ,  H01F10/30 ,  H01F10/13 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22

Abstract: The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.