Measurement system
    11.
    发明授权

    公开(公告)号:US09752866B2

    公开(公告)日:2017-09-05

    申请号:US14983053

    申请日:2015-12-29

    Abstract: A measurement system is configured to measure a surface structure of a sample. The surface of the sample has a thin film and a via, the depth of the via is larger than the thickness of the thin film. The measurement system includes a light source, a first light splitter, a first aperture stop, a lens assembly, a second aperture stop, a spectrum analyzer and an analysis module. The first light splitter disposed in the light emitting direction of the light source. The first aperture stop disposed between the light source and the first light splitter. The lens assembly is disposed between the first light splitter and the sample. The second aperture stop is disposed between the lens assembly and the first light splitter. The spectrum analyzer is disposed to at a side of the first light splitter opposite to the sample.

    Measurement system and measurement method

    公开(公告)号:US12270638B2

    公开(公告)日:2025-04-08

    申请号:US18089547

    申请日:2022-12-27

    Abstract: A measurement system including an excitation light source, an image sensor, and a calculator is provided. The excitation light source is configured to emit an excitation light beam. The image sensor is configured to record an image of the excitation light beam passing through a glass substrate having a plurality of vias. The image is a 2D interference pattern. The calculator is electrically connected to the image sensor. The calculator analyzes a 3D geometric-structure image of the vias in the glass substrate according to the image. A measurement method is also provided.

    Inspection apparatus and inspection method for inspecting light-emitting diodes

    公开(公告)号:US11656181B2

    公开(公告)日:2023-05-23

    申请号:US17135874

    申请日:2020-12-28

    CPC classification number: G01N21/66 G01N21/8806 G01N2201/062

    Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer. An inspection method for inspecting light-emitting diodes is also provided.

    Three-dimension measurement device and operation method thereof

    公开(公告)号:US11248903B2

    公开(公告)日:2022-02-15

    申请号:US16717425

    申请日:2019-12-17

    Abstract: A three-dimension measurement device includes a moving device, a projecting device, a surface-type image-capturing device and a processing device. The moving device carries an object, and moves the object to a plurality of positions. The projecting device generates a first light to the object. The surface-type image-capturing device senses a second light generated by the object in response to the first light to generate a phase image on each of the positions. The processing device is coupled to the surface-type image-capturing device and receives the phase images. The processing device performs a region-of-interest (ROI) operation for the phase images to generate a plurality of ROI images. The processing device performs a multi-step phase-shifting operation for the ROI images to calculate the surface height distribution of the object.

    INSPECTION APPARATUS AND INSPECTION METHOD FOR INSPECTING LIGHT-EMITTING DIODES

    公开(公告)号:US20210231570A1

    公开(公告)日:2021-07-29

    申请号:US17135874

    申请日:2020-12-28

    Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer. An inspection method for inspecting light-emitting diodes is also provided.

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