公开(公告)号：US09508035B2

公开(公告)日：2016-11-29

申请号：US14259182

申请日：2014-04-23

Applicant: Infineon Technologies AG

Inventor： Christoph Saas ,  Albert Missoni ,  Philip Teichmann

IPC: G06K7/08 ,  G06K19/06 ,  G06K19/073 ,  G06K19/07

CPC classification number: G06K19/073 ,  G06K19/0715

Abstract: In accordance with various embodiments, a smart card including one or more components to be supplied and a current source, which is configured to provide a supply current with a predefined current intensity to the one or more components to be supplied, is described.

Abstract translation: 根据各种实施例，描述了包括要供应的一个或多个组件和电流源的智能卡，其被配置为向要供应的一个或多个组件提供具有预定电流强度的电源电流。

公开(公告)号：US20150214163A1

公开(公告)日：2015-07-30

申请号：US14166930

申请日：2014-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Thomas Kuenemund ,  Jan Otterstedt ,  Christoph Saas

IPC: H01L23/00 ,  G01R31/28

CPC classification number: H01L23/57 ,  G01R31/2884 ,  G06F21/87 ,  G06F21/88 ,  H01L22/34 ,  H01L23/576 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: According to one embodiment, a chip is described comprising a transistor level, a semiconductor region in, below, or in and below the transistor level, a test signal circuit configured to supply a test signal to the semiconductor region, a determiner configured to determine a behavior of the semiconductor region in response to the test signal and a detector configured to detect a change of geometry of the semiconductor region based on the behavior and a reference behavior of the semiconductor region in response to the test signal.

Abstract translation: 根据一个实施例，描述了芯片，其包括晶体管电平，位于晶体管电平以下或之下的半导体区域，被配置为向半导体区域提供测试信号的测试信号电路，被配置为确定 响应于测试信号的半导体区域的行为以及被配置成基于测试信号的半导体区域的行为和参考行为来检测半导体区域的几何形状的变化的检测器。