公开(公告)号：US20200287017A1

公开(公告)日：2020-09-10

申请号：US16294821

申请日：2019-03-06

Applicant: Intel Corporation

Inventor： Sou-Chi CHANG ,  Chia-Chang LIN ,  Seung Hoon SUNG ,  Ashish Verma PENUMATCHA ,  Nazila HARATIPOURA ,  Owen LOH ,  Jack KAVALIEROS ,  Uygar AVCI ,  Ian YOUNG

IPC: H01L29/51 ,  H01L29/78 ,  H01L29/66

Abstract: A gate stack is described that uses anti-ferroelectric material (e.g., Si, La, N, Al, Zr, Ge, Y doped HfO2) or ferroelectric material (e.g., Si, La, N, Al, Zr, Ge, Y doped HfO2, perovskite ferroelectric such as NH4H2PO4, KH2PO4, LiNb03, LiTaO3, BaTiO3, PbTiO3, Pb (Zr,Ti) O3, (Pb,La)TiO3, and (Pb,La)(Zr,Ti)O3) which reduces write voltage, improves endurance, and increases retention. The gate stack of comprises strained anti-FE or FE material and depolarized anti-FE or FE. The endurance of the FE transistor is further improved by using a higher K (constant) dielectric (e.g., SiO2, Al2O3, HfO2, Ta2O3, La2O3) in the gate stack. High K effects may also be achieved by depolarizing the FE or FE oxide in the transistor gate stack.

公开(公告)号：US20200161535A1

公开(公告)日：2020-05-21

申请号：US16193599

申请日：2018-11-16

Applicant: Intel Corporation

Inventor： Chia-Ching LIN ,  Tanay GOSAVI ,  Sasikanth MANIPATRUNI ,  Dmitri NIKONOV ,  Ian YOUNG

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32

Abstract: A memory apparatus is provided which comprises: a stack comprising a magnetic insulating material and a transition metal dichalcogenide (TMD), wherein the magnetic insulating material has a first magnetization. The stack behaves as a free magnet. The apparatus includes a fixed magnet with a second magnetization. An interconnect is further provided which comprises a spin orbit material, wherein the interconnect is adjacent to the stack.

公开(公告)号：US20200083427A1

公开(公告)日：2020-03-12

申请号：US16128426

申请日：2018-09-11

Applicant: Intel Corporation

Inventor： Sasikanth MANIPATRUNI ,  Kaan OGUZ ,  Chia-Ching LIN ,  Christopher WIEGAND ,  Tanay GOSAVI ,  Ian YOUNG

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

Abstract: An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.