公开(公告)号：US20240113039A1

公开(公告)日：2024-04-04

申请号：US17957552

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Tayseer Mahdi ,  Grant Kloster ,  Florian Gstrein

IPC: H01L23/00 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L23/562 ,  H01L21/02126 ,  H01L21/0217 ,  H01L23/291

Abstract: Methods, device structures, and wafer treatment chemistries related to backside wafer treatments to reduce distortions and overlay errors due to wafer deformation during wafer chucking are described. A backside layer is applied to the wafer prior to chucking. The chemistry of the backside layer lowers the surface free energy of the wafer during chucking to eliminate or mitigate wafer deformation during wafer processing.

公开(公告)号：US20220199540A1

公开(公告)日：2022-06-23

申请号：US17125232

申请日：2020-12-17

Applicant: Intel Corporation

Inventor： Gurpreet Singh ,  Eungnak Han ,  Xuanxuan Chen ,  Tayseer Mahdi ,  Marie Krysak ,  Brandon Jay Holybee ,  Florian Gstrein

IPC: H01L23/538

Abstract: Disclosed herein are guided vias in microelectronic structures. For example, a microelectronic structure may include a metallization layer including a conductive via in contact with a conductive line, wherein a center of a top surface of the conductive via is laterally offset from a center of a bottom surface of the conductive via.

公开(公告)号：US20210375745A1

公开(公告)日：2021-12-02

申请号：US17032517

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： James Munro Blackwell ,  Robert L. Bristol ,  Xuanxuan Chen ,  Lauren Elizabeth Doyle ,  Florian Gstrein ,  Eungnak Han ,  Brandon Jay Holybee ,  Marie Krysak ,  Tayseer Mahdi ,  Richard E. Schenker ,  Gurpreet Singh ,  Emily Susan Walker

IPC: H01L23/528 ,  H01L23/522

Abstract: Disclosed herein are structures and techniques utilizing directed self-assembly for microelectronic device fabrication. For example, a microelectronic structure may include a patterned region including a first conductive line and a second conductive line, wherein the second conductive line is adjacent to the first conductive line; and an unordered region having an unordered lamellar pattern, wherein the unordered region is coplanar with the patterned region.

公开(公告)号：US20210371566A1

公开(公告)日：2021-12-02

申请号：US17313932

申请日：2021-05-06

Applicant: Intel Corporation

Inventor： Eungnak Han ,  Gurpreet Singh ,  Tayseer Mahdi ,  Florian Gstrein ,  Lauren Doyle ,  Marie Krysak ,  James Blackwell ,  Robert Bristol

IPC: C08F265/04 ,  C08F265/02 ,  G03F7/11

Abstract: A chemical composition includes a polymer chain having a surface anchoring group at a terminus of the polymer chain. The surface anchoring group is metal or dielectric selective and the polymer chain further includes at least one of a photo-acid generator, quencher, or a catalyst. In some embodiments, the surface anchoring group is metal selective or dielectric selective. In some embodiments, the polymer chain includes side polymer chains where the side polymer chains include polymers of photo-acid generators, quencher, or catalyst.