公开(公告)号：US20240272547A1

公开(公告)日：2024-08-15

申请号：US18620187

申请日：2024-03-28

申请人： Intel Corporation

发明人： Charles Cameron Mokhtarzadeh ,  Sanjana Vijay Karpe ,  Scott B. Clendenning ,  James Munro Blackwell ,  Lauren Elizabeth Doyle ,  Brandon Jay Holybee

IPC分类号： G03F7/004 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  G03F7/00 ,  G03F7/16 ,  G03F7/20 ,  H01L21/033

CPC分类号： G03F7/0042 ,  C23C16/407 ,  C23C16/45534 ,  C23C16/45553 ,  C23C16/56 ,  G03F7/161 ,  G03F7/162 ,  G03F7/2002 ,  G03F7/70033 ,  H01L21/0337

摘要： Tin carboxylate precursors for metal oxide resist layers and related methods are disclosed herein. An example method of fabricating a semiconductor device disclosed herein includes synthesizing a precursor including tin, depositing a metal oxide resist layer on a base material by applying the precursor, the metal oxide resist layer including tin-6 clusters, and patterning the metal oxide resist layer.

公开(公告)号：US12012473B2

公开(公告)日：2024-06-18

申请号：US17032517

申请日：2020-09-25

申请人： Intel Corporation

发明人： James Munro Blackwell ,  Robert L. Bristol ,  Xuanxuan Chen ,  Lauren Elizabeth Doyle ,  Florian Gstrein ,  Eungnak Han ,  Brandon Jay Holybee ,  Marie Krysak ,  Tayseer Mahdi ,  Richard E. Schenker ,  Gurpreet Singh ,  Emily Susan Walker

IPC分类号： G03F7/11 ,  C08F265/02 ,  C08F265/04 ,  H01L23/522 ,  H01L23/528

CPC分类号： C08F265/04 ,  C08F265/02 ,  G03F7/11 ,  H01L23/5226 ,  H01L23/528

摘要： Disclosed herein are structures and techniques utilizing directed self-assembly for microelectronic device fabrication. For example, a microelectronic structure may include a patterned region including a first conductive line and a second conductive line, wherein the second conductive line is adjacent to the first conductive line; and an unordered region having an unordered lamellar pattern, wherein the unordered region is coplanar with the patterned region.

公开(公告)号：US20210375745A1

公开(公告)日：2021-12-02

申请号：US17032517

申请日：2020-09-25

申请人： Intel Corporation

发明人： James Munro Blackwell ,  Robert L. Bristol ,  Xuanxuan Chen ,  Lauren Elizabeth Doyle ,  Florian Gstrein ,  Eungnak Han ,  Brandon Jay Holybee ,  Marie Krysak ,  Tayseer Mahdi ,  Richard E. Schenker ,  Gurpreet Singh ,  Emily Susan Walker

IPC分类号： H01L23/528 ,  H01L23/522

摘要： Disclosed herein are structures and techniques utilizing directed self-assembly for microelectronic device fabrication. For example, a microelectronic structure may include a patterned region including a first conductive line and a second conductive line, wherein the second conductive line is adjacent to the first conductive line; and an unordered region having an unordered lamellar pattern, wherein the unordered region is coplanar with the patterned region.