公开(公告)号：US20150179915A1

公开(公告)日：2015-06-25

申请号：US14138909

申请日：2013-12-23

Applicant: INTERMOLECULAR, INC.

Inventor： Frank Greer ,  Sergey Barabash ,  Dipankar Pramanik ,  Andrew Steinbach

IPC: H01L39/24 ,  C23C16/24 ,  C23C16/50 ,  H01L39/12

CPC classification number: C23C16/50 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76891 ,  H01L23/53285 ,  H01L23/5329 ,  H01L27/18 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric for superconducting electronics (e.g., amorphous silicon, silicon oxide, or silicon nitride) is fabricated with reduced loss tangent by fluorine passivation throughout the bulk of the layer. A fluorinant (gas or plasma) is injected into a process chamber, either continuously or as a series of pulses, while the dielectric is being formed by chemical vapor deposition on a substrate. To further reduce defects, the silicon may be deposited from a silicon precursor that includes multiple co-bonded silicon atoms, such as disilane or trisilane.

Abstract translation: 制造用于超导电子器件（例如，非晶硅，氧化硅或氮化硅）的电介质，通过在整个整个层中的氟钝化降低损耗角正切。 将荧光（气体或等离子体）连续地或作为一系列脉冲注入到处理室中，同时电介质通过化学气相沉积在衬底上形成。 为了进一步减少缺陷，可以从包括多个共键合的硅原子的硅前体（例如乙硅烷或丙硅烷）沉积硅。