公开(公告)号：US20140183737A1

公开(公告)日：2014-07-03

申请号：US13728934

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC.

Inventor： Xuena Zhang ,  Mankoo Lee ,  Dipankar Pramanik

IPC: H01L23/538 ,  H01L21/768

CPC classification number: H01L23/538 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/76829 ,  H01L21/76841 ,  H01L21/76873 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention include diffusion barriers, methods for forming the barriers, and semiconductor devices utilizing the barriers. The diffusion barrier comprises a self-assembled monolayer (SAM) on a semiconductor substrate, where one surface of the SAM is disposed in contact with and covalently bonded to the semiconductor substrate, and one surface of the monolayer is disposed in contact with and covalently bonded to a metal layer. In some embodiments, the barrier comprises an assembly of one or more monomeric subunits of the following structure: Si—(CnHy) (LM), where n is from 1 to 20, y is from 2n−2 to 2n, m is 1 to 3, L is a Group VI element, and M is a metal, such as copper. In some embodiments, (CnHy) can be branched, crosslinked, or cyclic.

Abstract translation: 本发明的实施例包括扩散阻挡层，形成屏障的方法以及利用屏障的半导体器件。 扩散阻挡层包括在半导体衬底上的自组装单层（SAM），其中SAM的一个表面设置成与半导体衬底接触并且共价键合到半导体衬底，并且单层的一个表面被设置成接触并共价键合 到金属层。 在一些实施方案中，阻挡层包含一个或多个下列结构的单体亚单位的组合：Si-（CnHy）（LM），其中n为1至20，y为2n-2至2n，m为1至 3，L是VI族元素，M是金属，例如铜。 在一些实施方案中，（C n H y）可以是支链，交联或环状的。

公开(公告)号：US20140183664A1

公开(公告)日：2014-07-03

申请号：US13728026

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC.

Inventor： Sergey Barabash ,  Dipankar Pramanik ,  Xuena Zhang

IPC: H01L29/51 ,  H01L29/40

CPC classification number: H01L29/401 ,  B82Y10/00 ,  H01L21/28255 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66181 ,  H01L29/78 ,  H01L29/94

Abstract: A doped fullerene-based conductive material can be used as an electrode, which can contact a dielectric such as a high k dielectric. By aligning the dielectric with the band gap of the doped fullerene-based electrode, e.g., the conduction band minimum of the dielectric falls into one of the band gaps of the doped fullerene-based material, thermionic leakage through the dielectric can be reduced, since the excited electrons or holes in the electrode would need higher thermal excitation energy to overcome the band gap before passing through the dielectric layer.

Abstract translation: 可以使用掺杂的富勒烯类导电材料作为电极，其可以与诸如高k电介质的电介质接触。 通过将电介质与掺杂的富勒烯类电极的带隙对准，例如，电介质的导带最小值落入掺杂的富勒烯类材料的带隙之一中，可以减少通过电介质的热离子泄漏，因为 电极中的激发的电子或空穴将需要更高的热激发能量以克服通过介电层之前的带隙。