公开(公告)号：US20180039881A1

公开(公告)日：2018-02-08

申请号：US15228653

申请日：2016-08-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Martin M. Frank ,  Jin Ping Han ,  Masatoshi Ishii ,  Timothy Phung ,  Aakash Pushp

IPC: G06N3/063 ,  G06N3/04

CPC classification number: G06N3/0635 ,  G06N3/084

Abstract: A tunable resistance device and methods of forming the same include a magnetic fixed layer having a fixed magnetization, a magnetic free layer, and a non-magnetic conductive layer directly between the magnetic fixed layer and the magnetic free layer. The magnetic fixed layer, the magnetic free layer, and the non-magnetic conductive layer are formed in a lattice of wires, with each wire in the lattice being formed from a stack of the magnetic fixed layer, the magnetic free layer, and the non-magnetic conductive layer.

公开(公告)号：US09704551B2

公开(公告)日：2017-07-11

申请号：US14700015

申请日：2015-04-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stuart S.P. Parkin ,  Timothy Phung ,  Aakash Pushp

IPC: G11C11/00 ,  G11C11/16 ,  G11C19/08

CPC classification number: G11C11/161 ,  G11C11/165 ,  G11C11/1675 ,  G11C19/0808

Abstract: Thermal-spin-torque (TST) in a magnetic tunnel junction (MTJ) is demonstrated by generating large temperature gradients across ultrathin MgO tunnel barriers, with this TST being significant enough to considerably affect the magnitude of the switching field of the MTJ. The origin of the TST is attributed to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Through magneto-Seebeck voltage measurements, it is estimated that the charge-current that would be generated due to the temperature gradient would give rise to spin-transfer-torque (STT) that is a thousand times too small to account for the observed changes in switching fields, indicating the presence of large TST.

公开(公告)号：US09583212B2

公开(公告)日：2017-02-28

申请号：US14466904

申请日：2014-08-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stuart P. Parkin ,  Timothy Phung ,  Aakash Pushp

IPC: H01L21/00 ,  G11C19/08

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0841 ,  G11C19/0875

Abstract: A domain wall injector device uses electrical current passed across an interface between two magnetic regions whose magnetizations are aligned non-collinearly to create a domain wall or a series of domain walls in one of the magnetic regions. The method relies on a combination of innate fringing fields from the magnetic regions and the spin-transfer torque derived from the charge current. The device may be used to store data that are subsequently read out.

Abstract translation: 畴壁注射器装置使用通过两个磁性区域之间的界面的电流，其磁化非对称排列以在一个磁性区域中产生畴壁或一系列畴壁。 该方法依赖于来自磁性区域的固有边缘场和从充电电流导出的自旋传递扭矩的组合。 该设备可用于存储随后读出的数据。