公开(公告)号：US08896035B2

公开(公告)日：2014-11-25

申请号：US13656819

申请日：2012-10-22

Applicant: International Business Machines Corporation

Inventor： Kota V. R. M. Murali ,  Edward J. Nowak ,  Stuart P. Parkin

IPC: H01L29/76

CPC classification number: H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/66545

Abstract: Disclosed is a metal oxide semiconductor field effect transistor (MOSFET) having phase transition material incorporated into one or more components and an associated method. The MOSFET can comprise an asymmetric gate electrode having a phase transition material section (e.g., a chromium or titanium-doped vanadium dioxide (VO2) section) above the drain-side of the channel region. Additionally or alternatively, the MOSFET can comprise source and drain contact landing pads comprising different phase transition materials (e.g., un-doped VO2 and chromium or titanium-doped VO2, respectively). In any case, the phase transition material(s) are pre-selected so as to be insulative when the MOSFET is in the OFF state and the voltage difference between the drain region and the source region (VDS) is high in order to minimize leakage current and so as to be conductive when the MOSFET is in the ON state and VDS is high in order to maintain drive current.

Abstract translation: 公开了一种具有并入一个或多个部件中的相变材料的金属氧化物半导体场效应晶体管（MOSFET）和相关方法。 MOSFET可以包括在沟道区域的漏极侧上方具有相变材料部分（例如，铬或钛掺杂的二氧化钒（VO2）部分）的不对称栅极电极。 另外或替代地，MOSFET可以包括源极和漏极接触着陆焊盘，其包括不同的相变材料（例如，分别为未掺杂的VO2和铬或钛掺杂的VO2）。 在任何情况下，相位迁移材料是预先选择的，以便当MOSFET处于OFF状态并且漏极区域和源极区域（VDS）之间的电压差较高时为绝缘，以便最小化泄漏 并且当MOSFET处于导通状态并且VDS为高以便保持驱动电流时导通。

公开(公告)号：US20140110765A1

公开(公告)日：2014-04-24

申请号：US13656819

申请日：2012-10-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Kota V. R. M. Murali ,  Edward J. Nowak ,  Stuart P. Parkin

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/66545

Abstract: Disclosed is a metal oxide semiconductor field effect transistor (MOSFET) having phase transition material incorporated into one or more components and an associated method. The MOSFET can comprise an asymmetric gate electrode having a phase transition material section (e.g., a chromium or titanium-doped vanadium dioxide (VO2) section) above the drain-side of the channel region. Additionally or alternatively, the MOSFET can comprise source and drain contact landing pads comprising different phase transition materials (e.g., un-doped VO2 and chromium or titanium-doped VO2, respectively). In any case, the phase transition material(s) are pre-selected so as to be insulative when the MOSFET is in the OFF state and the voltage difference between the drain region and the source region (VDS) is high in order to minimize leakage current and so as to be conductive when the MOSFET is in the ON state and VDS is high in order to maintain drive current.

Abstract translation: 公开了一种具有并入一个或多个部件中的相变材料的金属氧化物半导体场效应晶体管（MOSFET）和相关方法。 MOSFET可以包括在沟道区域的漏极侧上方具有相变材料部分（例如，铬或钛掺杂的二氧化钒（VO2）部分）的不对称栅极电极。 另外或替代地，MOSFET可以包括源极和漏极接触着陆焊盘，其包括不同的相变材料（例如，分别为未掺杂的VO2和铬或钛掺杂的VO2）。 在任何情况下，相位迁移材料是预先选择的，以便当MOSFET处于OFF状态并且漏极区域和源极区域（VDS）之间的电压差较高时为绝缘，以便最小化泄漏 并且当MOSFET处于导通状态并且VDS为高以便保持驱动电流时导通。

公开(公告)号：US09583212B2

公开(公告)日：2017-02-28

申请号：US14466904

申请日：2014-08-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stuart P. Parkin ,  Timothy Phung ,  Aakash Pushp

IPC: H01L21/00 ,  G11C19/08

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1675 ,  G11C19/0841 ,  G11C19/0875

Abstract: A domain wall injector device uses electrical current passed across an interface between two magnetic regions whose magnetizations are aligned non-collinearly to create a domain wall or a series of domain walls in one of the magnetic regions. The method relies on a combination of innate fringing fields from the magnetic regions and the spin-transfer torque derived from the charge current. The device may be used to store data that are subsequently read out.

Abstract translation: 畴壁注射器装置使用通过两个磁性区域之间的界面的电流，其磁化非对称排列以在一个磁性区域中产生畴壁或一系列畴壁。 该方法依赖于来自磁性区域的固有边缘场和从充电电流导出的自旋传递扭矩的组合。 该设备可用于存储随后读出的数据。