Abstract:
A circuit is provided for that includes one or more TCAM arrays including one or more matchlines configured to model a neural network. Each of the one or more TCAM arrays models a connected group of neurons such that input search data into the one or more matchlines is modeled as neuron dendrite information, and the output from the one or more matchlines is modeled as neuron axon information. The circuit further includes one or more additional bits included within each of the one or more matchlines that are configured to model connectivity strength between each neuron dendrite and axon. The circuit also includes a real-time learning block included within each of the one or more TCAM arrays configured to modify the connectivity strength between each neuron dendrite and axon using wild-cards written and stored in the one or more additional bits.
Abstract:
Ternary content addressable memory (TCAM) structures and methods of use are disclosed. The memory architecture includes one or more ternary content addressable memory (TCAM) fields, and control logic that applies progressively discriminating data-masking and scores a closeness of a match based on matched and mismatched bits.
Abstract:
A ternary content addressable memory (TCAM) structure may activate individual groups of subarrays in the TCAM structure, during a non-search mode, at configurable intervals of time. The activating causes the TCAM structure to select locations and sequences in which subarrays of the TCAM structure are activated or deactivated. When activating, the TCAM structure is configured to perform a dummy search within the particular subarray. The activating reduces a change in current during transition between a search mode and the non-search mode.
Abstract:
A content addressable memory (CAM) search engine is disclosed. The CAM search engine includes a data compare plane having a content addressable memory die including an array of comparison cells. The CAM search engine further includes a memory stack on the data compare plane. The memory stack has stacked memory dies including memory banks. The array of comparison cells includes parallel interconnects. The parallel interconnects electrically connect to outputs of the memory banks. The comparison cells are time-shared among the one or more memory banks
Abstract:
Methods, systems, and structures for stress balancing field effect transistors subject to bias temperature instability-caused threshold voltage shifts. A method includes characterizing fatigue of a location in a memory array by skewing a bit line voltage of the location. The method also includes determining that the location is unbalanced based on the characterizing. Further, the method includes inverting a logic state of the location. Additionally, the method includes changing a value of an inversion indicator corresponding to the location.
Abstract:
Methods and structures for configuring an integrated circuit including repeated cells that are divided into banks having a respective power assist and a respective operational assist are provided. A method includes configuring the banks without power assist and operational assist. The method further includes selecting the power assist for a bank based on a determination that a weak cell remains in the bank after configuring the bank with the respective operational assist.