公开(公告)号：US20140145747A1

公开(公告)日：2014-05-29

申请号：US13689090

申请日：2012-11-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Nathaniel R. CHADWICK ,  John B. DEFORGE ,  John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Ezra D. HALL ,  Marc D. KNOX ,  Kirk D. PETERSON

IPC: G01R31/26 ,  H01L29/00

CPC classification number: H01L29/00 ,  G01R31/2818 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.

Abstract translation: 提供一种包括半导体器件中的光激活测试连接的测试电路。 在半导体器件的测试期间，光激发测试连接是导电的，并且在测试之后是非导电的。

公开(公告)号：US20150228357A1

公开(公告)日：2015-08-13

申请号：US14178955

申请日：2014-02-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Igor ARSOVSKI ,  Nathaniel R. CHADWICK ,  John B. DEFORGE ,  Ezra D.B. HALL ,  Kirk D. PETERSON

IPC: G11C29/04 ,  G11C11/419

CPC classification number: G11C11/419 ,  G11C29/06

Abstract: Methods, systems, and structures for stress balancing field effect transistors subject to bias temperature instability-caused threshold voltage shifts. A method includes characterizing fatigue of a location in a memory array by skewing a bit line voltage of the location. The method also includes determining that the location is unbalanced based on the characterizing. Further, the method includes inverting a logic state of the location. Additionally, the method includes changing a value of an inversion indicator corresponding to the location.

Abstract translation: 应力平衡场效应晶体管的方法，系统和结构受到偏置温度不稳定性引起的阈值电压偏移。 一种方法包括通过偏移位置的位线电压来表征存储器阵列中的位置的疲劳。 该方法还包括基于特征确定位置不平衡。 此外，该方法包括反转位置的逻辑状态。 此外，该方法包括改变对应于该位置的反转指示符的值。