公开(公告)号：US20190386168A1

公开(公告)日：2019-12-19

申请号：US16552664

申请日：2019-08-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  H01L31/103 ,  H01L31/028 ,  H01L31/0232 ,  G02B6/12

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20190019914A1

公开(公告)日：2019-01-17

申请号：US16136488

申请日：2018-09-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/103 ,  H01P1/17 ,  H01P3/16 ,  H01L31/02

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20180269348A1

公开(公告)日：2018-09-20

申请号：US15981191

申请日：2018-05-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/103 ,  H01P1/17 ,  H01P3/16 ,  H01L31/02

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20170125627A1

公开(公告)日：2017-05-04

申请号：US15408012

申请日：2017-01-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  G02B6/12 ,  H01L31/103 ,  H01L31/0232 ,  H01L31/028

CPC classification number: H01L31/1872 ,  G02B6/12 ,  G02B6/12004 ,  H01L31/02005 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1864 ,  H01L2223/6627 ,  H01P1/172 ,  H01P3/16 ,  Y02E10/50

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20140145747A1

公开(公告)日：2014-05-29

申请号：US13689090

申请日：2012-11-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Nathaniel R. CHADWICK ,  John B. DEFORGE ,  John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Ezra D. HALL ,  Marc D. KNOX ,  Kirk D. PETERSON

IPC: G01R31/26 ,  H01L29/00

CPC classification number: H01L29/00 ,  G01R31/2818 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A test circuit including a light activated test connection in a semiconductor device is provided. The light activated test connection is electrically conductive during a test of the semiconductor device and is electrically non-conductive after the test.

Abstract translation: 提供一种包括半导体器件中的光激活测试连接的测试电路。 在半导体器件的测试期间，光激发测试连接是导电的，并且在测试之后是非导电的。

公开(公告)号：US20190355865A1

公开(公告)日：2019-11-21

申请号：US16531649

申请日：2019-08-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/18 ,  H01L31/028 ,  G02B6/12 ,  H01L31/103 ,  H01L31/0232

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

公开(公告)号：US20170031417A1

公开(公告)日：2017-02-02

申请号：US14833324

申请日：2015-08-24

Applicant: International Business Machines Corporation

Inventor： Malcolm S. ALLEN-WARE ,  Michael S. FLOYD ,  Joshua D. FRIEDRICH ,  Charles R. LEFURGY ,  Kirk D. PETERSON ,  Karthick RAJAMANI ,  Srinivasan RAMANI ,  Todd J. ROSEDAHL ,  Gregory S. STILL ,  Brian W. THOMPTO ,  Victor ZYUBAN

IPC: G06F1/32

CPC classification number: G06F1/324 ,  G06F1/3203 ,  G06F1/3206 ,  G06F1/3243 ,  Y02D10/126 ,  Y02D10/152

Abstract: A method for adjusting a frequency of a processor is disclosed herein. In one embodiment, the method includes determining a total current and a temperature of the multi-core processor and estimating a leakage current for the multi-core processor. The method also includes calculating a switching current by subtracting the leakage current from the total current. The method also includes calculating an effective switching capacitance based at least in part on the switching current. The method also includes calculating a workload activity factor by dividing the effective switching capacitance by a predetermined effective switching capacitance stored in vital product data, and enforcing a turbo frequency limit of the multi-core processor based on the workload activity factor.

Abstract translation: 本文公开了一种用于调整处理器频率的方法。 在一个实施例中，该方法包括确定多核处理器的总电流和温度并估计多核处理器的漏电流。 该方法还包括通过从总电流中减去漏电流来计算开关电流。 该方法还包括至少部分地基于开关电流来计算有效开关电容。 该方法还包括通过将有效开关电容除以存储在重要产品数据中的预定有效开关电容来计算工作负载活动因子，并且基于工作负载活动因素来执行多核处理器的turbo频率限制。

公开(公告)号：US20150228357A1

公开(公告)日：2015-08-13

申请号：US14178955

申请日：2014-02-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Igor ARSOVSKI ,  Nathaniel R. CHADWICK ,  John B. DEFORGE ,  Ezra D.B. HALL ,  Kirk D. PETERSON

IPC: G11C29/04 ,  G11C11/419

CPC classification number: G11C11/419 ,  G11C29/06

Abstract: Methods, systems, and structures for stress balancing field effect transistors subject to bias temperature instability-caused threshold voltage shifts. A method includes characterizing fatigue of a location in a memory array by skewing a bit line voltage of the location. The method also includes determining that the location is unbalanced based on the characterizing. Further, the method includes inverting a logic state of the location. Additionally, the method includes changing a value of an inversion indicator corresponding to the location.

Abstract translation: 应力平衡场效应晶体管的方法，系统和结构受到偏置温度不稳定性引起的阈值电压偏移。 一种方法包括通过偏移位置的位线电压来表征存储器阵列中的位置的疲劳。 该方法还包括基于特征确定位置不平衡。 此外，该方法包括反转位置的逻辑状态。 此外，该方法包括改变对应于该位置的反转指示符的值。

公开(公告)号：US20150115270A1

公开(公告)日：2015-04-30

申请号：US14068461

申请日：2013-10-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  William J. MURPHY ,  Kirk D. PETERSON ,  Steven M. SHANK

IPC: H01L31/0203 ,  H01L31/20

CPC classification number: H01L31/0203 ,  H01L31/1872 ,  H01L31/208 ,  Y02E10/50 ,  Y02P70/521

Abstract: An encapsulated sensors and methods of manufacture are disclosed herein. The method includes forming an amorphous or polycrystalline material in contact with a layer of seed material. The method further includes forming an expansion space for the amorphous or polycrystalline material. The method further includes forming an encapsulation structure about the amorphous or polycrystalline material. The method further includes crystallizing the amorphous or polycrystalline material by a thermal anneal process such that the amorphous or polycrystalline material expands within the expansion space.

Abstract translation: 封装的传感器和制造方法在本文中公开。 该方法包括形成与种子材料层接触的无定形或多晶材料。 该方法还包括形成用于非晶或多晶材料的膨胀空间。 该方法还包括形成关于非晶或多晶材料的封装结构。 该方法还包括通过热退火工艺使非晶或多晶材料结晶，使得非晶或多晶材料在膨胀空间内膨胀。

公开(公告)号：US20130228835A1

公开(公告)日：2013-09-05

申请号：US13862901

申请日：2013-04-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Kirk D. PETERSON ,  Jed H. RANKIN

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/1083 ,  H01L29/6653 ,  H01L29/66537 ,  H01L29/6659 ,  H01L29/78 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7849

Abstract: An improved semiconductor device manufactured using, for example, replacement gate technologies. The method includes forming a dummy gate structure having a gate stack and spacers. The method further includes forming a dielectric material adjacent to the dummy gate structure. The method further includes removing the spacers to form gaps, and implanting a halo extension through the gaps and into an underlying diffusion region.

Abstract translation: 使用例如替换栅极技术制造的改进的半导体器件。 该方法包括形成具有栅极堆叠和间隔物的虚拟栅极结构。 该方法还包括形成与虚拟栅极结构相邻的电介质材料。 该方法还包括去除间隔物以形成间隙，并且通过间隙注入卤素延伸并进入下面的扩散区域。