公开(公告)号：US10418392B2

公开(公告)日：2019-09-17

申请号：US16015307

申请日：2018-06-22

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang ,  Sheng-Min Yu

IPC: H01L27/146

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

公开(公告)号：US10038019B2

公开(公告)日：2018-07-31

申请号：US15394712

申请日：2016-12-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang ,  Sheng-Min Yu

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14683

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

公开(公告)号：US09012314B2

公开(公告)日：2015-04-21

申请号：US13710795

申请日：2012-12-11

Applicant: Industrial Technology Research Institute

Inventor： Wen-Ching Sun ,  Sheng-Min Yu ,  Tai-Jui Wang ,  Tzer-Shen Lin

IPC: H01L21/22 ,  H01L21/38 ,  H01L21/225 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L21/225 ,  H01L21/22 ,  H01L21/2255 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract translation: 公开了一种用于形成掺杂区域的方法，包括提供衬底，在衬底上形成第一类掺杂材料，并在衬底上形成第二类掺杂材料，其中第一类型掺杂材料与第二类掺杂材料分离 掺杂材料缺口; 形成覆盖所述基板的覆盖层，所述第一类型掺杂材料和所述第二类型掺杂材料; 并且进行热扩散处理以将第一种掺杂材料和第二类型掺杂材料扩散到衬底中。