公开(公告)号：US20210190473A1

公开(公告)日：2021-06-24

申请号：US17123572

申请日：2020-12-16

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER

IPC: G01B7/30 ,  G01D5/22

Abstract: The present disclosure relates, inter alia, to a stator package for use in an inductive angle sensor, wherein the stator package includes a substrate, on which at least two metallization layers arranged at different levels are arranged. The stator package also includes a semiconductor chip with an integrated circuit, wherein an electrically insulating potting compound surrounds the substrate including the semiconductor chip and a receiving coil arrangement. The receiving coil arrangement includes at least two electrically conductive receiving coils, which are implemented in the two metallization layers by thin-film technology.

公开(公告)号：US20210018308A1

公开(公告)日：2021-01-21

申请号：US16922714

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER

IPC: G01B7/30 ,  G01D5/16

Abstract: An off-axis counter is suggested that is arranged to count magnetic poles of a magnetic field source that turns around a rotation axis modulo an integer number. Also, a rotation angle sensing device and a method for determining a rotation angle are provided.

公开(公告)号：US20200341078A1

公开(公告)日：2020-10-29

申请号：US16394304

申请日：2019-04-25

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER

IPC: G01R33/07 ,  G01R33/00 ,  H01L43/06 ,  H01L43/04

Abstract: A sensor cross-talk compensation system includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a vertical Hall sensor element disposed in the semiconductor substrate, the vertical Hall sensor element is configured to generate a sensor signal in response to a magnetic field impinging thereon; and an asymmetry detector configured to detect an asymmetric characteristic of the vertical Hall sensor element. The asymmetry detector includes a detector main region that vertically extends into the semiconductor substrate from the first main surface towards the second main surface and is of a conductivity type having a first doping concentration; and at least three detector contacts disposed in the detector main region at the first main surface, the at least three detector contacts are ohmic contacts of the conductivity type having a second doping concentration that is higher than the first doping concentration.

公开(公告)号：US20200185599A1

公开(公告)日：2020-06-11

申请号：US16794598

申请日：2020-02-19

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER

IPC: H01L43/04 ,  G01R33/07 ,  H01L43/06

Abstract: The present disclosure relates to 3-dimensional Hall sensor devices comprising a Hall sensor element having a Hall effect region implemented in a 3-dimensional shell and comprising at least three terminals. Each terminal is connected to at least one electrical contact of the Hall effect region and each electrical contact is disposed at a different region of the 3-dimensional shell. The present disclosure further discloses spinning current/voltage schemes for offset cancellation in such 3-dimensional Hall sensor devices.

公开(公告)号：US20180087889A1

公开(公告)日：2018-03-29

申请号：US15713877

申请日：2017-09-25

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER ,  Wolfgang GRANIG

IPC: G01B7/30 ,  G01D5/14 ,  G01D5/165 ,  G01R33/02 ,  G01B7/00

CPC classification number: G01B7/30 ,  G01B7/003 ,  G01D5/145 ,  G01D5/147 ,  G01D5/165 ,  G01R33/02 ,  G01R33/093

Abstract: A magnetic angle sensor device and a method for operating such device is provided. The magnetic angle sensor device includes a shaft rotatable around a rotation axis; a magnetic field source coupled to the shaft; a first magnetic angle sensor configured to generate a first signal that represents a first angle based on a first diametric magnetic field from the magnetic field source applied to the first magnetic angle sensor; a second magnetic angle sensor configured to generate a second signal that represents a second angle based on a second diametric magnetic field from the magnetic field source applied to the second magnetic angle sensor; and a combining circuit configured to determine a combined rotation angle based on the first signal and on the second signal.

公开(公告)号：US20180031644A1

公开(公告)日：2018-02-01

申请号：US15664297

申请日：2017-07-31

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER

IPC: G01R33/00 ,  G01R33/07

Abstract: A Hall sensor device includes a Hall effect region of a first conductivity type, electrical contact regions configured to provide electrical signals to/from the Hall effect region, and circuitry. Each electrical contact region is formed in a respective well of a second conductivity type that adjoins the Hall effect region. Circuitry includes control terminals, wherein each control terminal is configured to control a conductance in an associated well of the second conductivity type. The circuitry is configured to selectively apply control signals to a first subset of the control terminals to form channels conducting majority carriers of the first conductivity type in the associated wells during a first operating phase, and to selectively apply control signals to a second subset of the control terminals to form channels conducting majority carriers of the first conductivity type in the associated wells during a second operating phase.

公开(公告)号：US20170343623A1

公开(公告)日：2017-11-30

申请号：US15598575

申请日：2017-05-18

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER

IPC: G01R33/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  H01L29/82 ,  G01R33/00

CPC classification number: G01R33/066 ,  G01R33/0023 ,  G01R33/0029 ,  G01R33/06 ,  G01R33/075 ,  H01L29/0692 ,  H01L29/41758 ,  H01L29/42376 ,  H01L29/78 ,  H01L29/82

Abstract: A magnetic-field-sensitive MOSFET (MagFET) is described herein. In accordance with one embodiment, the MagFET comprises a semiconductor body, a first well region arranged in the semiconductor body and being doped with dopants of a first doping type, and a number of N contact regions arranged in the first well region and doped with dopants of a second doping type, which is complementary to the first doping type, wherein N is equal to or greater than three. A gate electrode covers the first well region between the contact regions. The gate electrode is separated from the first well region by an isolation layer and is configured to control a charge carrier density in the first well region between the contact regions dependent on a voltage applied at the gate electrode. The first well region has a center of symmetry and the contact regions are arranged rotationally symmetric with respect to the center of symmetry with a rotational symmetry of order N.

公开(公告)号：US20170254671A1

公开(公告)日：2017-09-07

申请号：US15446349

申请日：2017-03-01

Applicant: Infineon Technologies AG

Inventor： Leo AICHRIEDLER ,  Udo AUSSERLECHNER ,  Peter SLAMA

IPC: G01D5/20

Abstract: A sensor arrangement and an e-bike that includes the sensor arrangement are provided. The sensor arrangement includes a rotatable driving shaft for an e-bike extending along a rotation axis and includes a bore extending from a first end face of the rotatable driving shaft along the rotation axis, a magnet module arranged within the bore and coupled to the rotatable driving shaft, the magnet module configured to generate a magnetic field within the bore, and at least one sensing element configured to sense a rotation of the magnetic field in response to rotation of the rotatable driving shaft.

公开(公告)号：US20150015249A1

公开(公告)日：2015-01-15

申请号：US13939113

申请日：2013-07-10

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER ,  Volker STRUTZ ,  Jochen DANGELMAIER ,  Rainer STEINER

IPC: G01R33/00 ,  B29C70/74

CPC classification number: G01R33/0047 ,  B29C70/745 ,  G01R15/20 ,  H01L24/48 ,  H01L2224/4809 ,  H01L2224/48451 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: A current sensor device includes a casing having a cavity and a conductor fixedly mounted to the casing. A semiconductor chip configured to sense a magnetic field is arranged in the cavity. An electrically insulating medium is configured to at least partially fill the cavity of the casing.

Abstract translation: 电流传感器装置包括具有腔体和固定地安装在壳体上的导体的壳体。 构造成感测磁场的半导体芯片布置在空腔中。 电绝缘介质构造成至少部分地填充壳体的空腔。

公开(公告)号：US20240133932A1

公开(公告)日：2024-04-25

申请号：US18487604

申请日：2023-10-15

Applicant: Infineon Technologies AG

Inventor： Udo AUSSERLECHNER

IPC: G01R27/08

CPC classification number: G01R27/08

Abstract: The present disclosure relates to an apparatus for measuring a first electric current in a first printed conductor of a printed circuit board, which also includes a second printed conductor, wherein the ratio of electrical resistances between the first and second printed conductors is known. The apparatus includes a device for measuring a first electric voltage across the first printed conductor based on the first electric current in the first printed conductor, a device for injecting a known second electric current into the second printed conductor, a device for measuring a second electric voltage across the second printed conductor based on the known second electric current in the second printed conductor, and a device for determining the first electric current based on the first electric voltage, the second electric voltage, the known second electric current and the known ratio of electrical resistances between the first and second printed conductors.