公开(公告)号：US09251934B2

公开(公告)日：2016-02-02

申请号：US13739030

申请日：2013-01-11

Applicant: Infineon Technologies AG

Inventor： Marko Lemke ,  Stefan Tegen ,  Uwe Rudolph

IPC: H01L21/3065 ,  B82Y40/00 ,  H01B13/00 ,  C01B31/02

CPC classification number: H01M4/386 ,  B82Y40/00 ,  C01B31/02 ,  C01B32/05 ,  H01L21/3065 ,  H01L29/0676 ,  H01L29/16 ,  H01M4/66 ,  H01M10/0525 ,  H01M2004/025 ,  H01M2004/027

Abstract: A method for manufacturing a plurality of nanowires, the method including: providing a carrier comprising an exposed surface of a material to be processed and applying a plasma treatment on the exposed surface of the material to be processed to thereby form a plurality of nanowires from the material to be processed during the plasma treatment.

Abstract translation: 一种用于制造多个纳米线的方法，所述方法包括：提供包括待处理材料的暴露表面的载体，并在待处理材料的暴露表面上施加等离子体处理，从而形成多个纳米线 在等离子体处理期间待处理的材料。

公开(公告)号：US08921974B2

公开(公告)日：2014-12-30

申请号：US13911106

申请日：2013-06-06

Applicant: Infineon Technologies AG

Inventor： Thoralf Kautzsch ,  Boris Binder ,  Uwe Rudolph ,  Frank Hoffman

IPC: H01L29/00 ,  H01L21/76 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00626 ,  B81B3/0021 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C2201/0116

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract translation: 描述和描述了与半导体制造有关的实施例和具有半导体结构的半导体器件

公开(公告)号：US20140197130A1

公开(公告)日：2014-07-17

申请号：US13739030

申请日：2013-01-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Marko Lemke ,  Stefan Tegen ,  Uwe Rudolph

IPC: H01B13/00 ,  H01L21/3065

CPC classification number: H01M4/386 ,  B82Y40/00 ,  C01B31/02 ,  C01B32/05 ,  H01L21/3065 ,  H01L29/0676 ,  H01L29/16 ,  H01M4/66 ,  H01M10/0525 ,  H01M2004/025 ,  H01M2004/027

Abstract: A method for manufacturing a plurality of nanowires, the method including: providing a carrier comprising an exposed surface of a material to be processed and applying a plasma treatment on the exposed surface of the material to be processed to thereby form a plurality of nanowires from the material to be processed during the plasma treatment.

Abstract translation: 一种用于制造多个纳米线的方法，所述方法包括：提供包括待处理材料的暴露表面的载体，并在待处理材料的暴露表面上施加等离子体处理，从而形成多个纳米线 在等离子体处理期间待处理的材料。